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1601“…Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. …”
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1602“…Ion-sensitive field-effect transistors (ISFETs) are used as elementary devices to build many types of chemical sensors and biosensors. …”
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1603“…These types of structures could help in understanding the intrinsic CNT response by eliminating the analyte impact on the Schottky barrier regions of the CNT field-effect transistors (CNTFETs). The influence of multiple processing conditions on the electronic properties of CNTFETs with a suspended individual CNT used as the CNTFET channel is presented. …”
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1604“…In this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. …”
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1605por Izquierdo, José Enrique Eirez, Cavallari, Marco Roberto, García, Dennis Cabrera, Oliveira, José Diogo da Silva, Nogueira, Vinicius Augusto Machado, Braga, Guilherme de Souza, Ando Junior, Oswaldo Hideo, Quivy, Alain A., Kymissis, Ioannis, Fonseca, Fernando Josepetti“…Finally, for the first time, a PBTTT-C14 transistor on cross-linked PVP was shown to respond to isoborneol with a sensitivity of up to 6% change in mobility per ppm. …”
Publicado 2023
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1606por Qian, Sihao, Zhang, Shouyan, Chen, Danni, Wang, Jun, Wu, Wei, Zhang, Shuhua, Geng, Zhi, He, Yong, Zhu, Bo“…Affinity-based organic electrochemical transistor (OECT) sensors offer an attractive approach to point-of-care diagnostics due to their extreme sensitivity and easy operation; however, their application in the real world is frequently challenged by the poor storage stability of antibody proteins and the interference from biofouling in complex biofluids. …”
Publicado 2023
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1607“…Here, we have designed and prepared a polymer with a donor-acceptor structure and tested its potential as a p-type material for organic field-effect transistor (OFET) applications using a solution-processing method. …”
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1608“…In this study, optoelectronic synaptic transistors based on indium–gallium–zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. …”
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1609
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1610por Hrauda, Nina, Zhang, Jianjun, Wintersberger, Eugen, Etzelstorfer, Tanja, Mandl, Bernhard, Stangl, Julian, Carbone, Dina, Holý, Vaclav, Jovanović, Vladimir, Biasotto, Cleber, Nanver, Lis K., Moers, Jürgen, Grützmacher, Detlev, Bauer, Günther“…We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si–metal–oxide semiconductor field-effect transistor.…”
Publicado 2011
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1611por Shalev, Gil, Cohen, Ariel, Doron, Amihood, Machauf, Andrew, Horesh, Moran, Virobnik, Udi, Ullien, Daniela, Levy, Ilan“…This paper presents the fabrication of a sensitive, fully depleted (FD), electrolyte-insulator-semiconductor field-effect transistor (EISFET) made with a silicon-on-insulator (SOI) wafer of a thin 10-30 nm active SOI layer. …”
Publicado 2009
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1612“…We demonstrate liquid crystal-on-organic field-effect transistor (LC-on-OFET) sensory devices that can perceptively sense ultralow level gas flows. …”
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1613“…We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding β-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. …”
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1614por Shokrani, Mohammad Reza, Khoddam, Mojtaba, Hamidon, Mohd Nizar B., Kamsani, Noor Ain, Rokhani, Fakhrul Zaman, Shafie, Suhaidi Bin“…This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. …”
Publicado 2014
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1615“…Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.…”
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1616por Cavallari, Marco R., Izquierdo, José E. E., Braga, Guilherme S., Dirani, Ely A. T., Pereira-da-Silva, Marcelo A., Rodríguez, Estrella F. G., Fonseca, Fernando J.“…Electronic devices based on organic thin-film transistors (OTFT) have the potential to supply the demand for portable and low-cost gadgets, mainly as sensors for in situ disease diagnosis and environment monitoring. …”
Publicado 2015
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1617por Chen, Wei, Yu, Yayun, Zheng, Xiaoming, Qin, Shiqiao, Wang, Fei, Fang, Jingyue, Wang, Guang, Wang, Chaocheng, Wang, Li, Peng, Gang, Zhang, Xue-Ao“…A so called all-carbon based graphene field effect transistor (GFET) in which the electrodes are composed of graphite-like nano-sheets instead of metals in the traditional devices is fabricated by one-step e-beam direct writing (EBDW). …”
Publicado 2015
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1618por Lee, Hee Ho, Bae, Myunghan, Jo, Sung-Hyun, Shin, Jang-Kyoo, Son, Dong Hyeok, Won, Chul-Ho, Jeong, Hyun-Min, Lee, Jung-Hee, Kang, Shin-Won“…In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. …”
Publicado 2015
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1619por Chen, Kuan-I, Pan, Chien-Yuan, Li, Keng-Hui, Huang, Ying-Chih, Lu, Chia-Wei, Tang, Chuan-Yi, Su, Ya-Wen, Tseng, Ling-Wei, Tseng, Kun-Chang, Lin, Chi-Yun, Chen, Chii-Dong, Lin, Shih-Shun, Chen, Yit-Tsong“…In this report, we determined the binding of oligonucleotides to a receptor-modified silicon nanowire field-effect transistor (SiNW-FET) by monitoring the changes in conductance of the SiNW-FET. …”
Publicado 2015
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1620por Fujii, Mami N., Ishikawa, Yasuaki, Miwa, Kazumoto, Okada, Hiromi, Uraoka, Yukiharu, Ono, Shimpei“…We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic–inorganic hybrid device under long-term electrical stress. …”
Publicado 2015
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