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1661por Chen, Hang, Zhao, Xiaoqian, Xi, Zhong, Zhang, Ye, Li, Hang, Li, Zengyao, Shi, Haoze, Huang, Longchang, Shen, Renhui, Tao, Jianxin, Wang, Tong“…Background: A silicon nanowire field effect transistor biosensor has four advantages in the detection of small biomolecules. …”
Publicado 2019
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1662“…We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si(1−x)Ge(x)) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH(4) and GeH(4) gas mixture, and a Si(1−x)Ge(x) thin film was crystallized using different excimer laser densities. …”
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1663“…[Image: see text] Here, we report flexible thermal sensors based on organic field-effect transistors (OFETs) that are fabricated using polymeric channel and gate-insulating layers on flexible polymer film substrates. …”
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1664por Yang, Lingming, Charnas, Adam, Qiu, Gang, Lin, Yu-Ming, Lu, Chun-Chieh, Tsai, Wilman, Paduano, Qing, Snure, Michael, Ye, Peide D.“…As a result, high-performance top-gate BP transistors show a record high ON-state drain current (I(on)) of 940 μA/μm. …”
Publicado 2017
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1665“…[Image: see text] In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. …”
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1666“…To improve the performance of amorphous InGaZnO(x) (a-IGZO) thin film transistors (TFTs), in this thesis, Cs(+) ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. …”
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1667por Mohammadian, Navid, Faraji, Sheida, Sagar, Srikrishna, Das, Bikas C., Turner, Michael L., Majewski, Leszek A.“…Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. …”
Publicado 2019
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1668por Picca, Rosaria Anna, Manoli, Kyriaki, Macchia, Eleonora, Tricase, Angelo, Di Franco, Cinzia, Scamarcio, Gaetano, Cioffi, Nicola, Torsi, Luisa“…Robust electrolyte-gated organic field-effect-transistors (OFETs) are particularly needed for the development of biosensing devices. …”
Publicado 2019
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1669“…In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. …”
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1670por Jiménez-Tejada, Juan A., Romero, Adrián, González, Jesús, Chaure, Nandu B., Cammidge, Andrew N., Chambrier, Isabelle, Ray, Asim K., Deen, M. Jamal“…In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. …”
Publicado 2019
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1671“…A single molecular transistor is considered in the presence of electron-electron interaction, electron-phonon interaction, an external magnetic field and dissipation. …”
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1672por Wang, Cheng-Jyun, You, Hsin-Chiang, Lin, Kuan, Ou, Jen-Hung, Chao, Keng-Hsien, Ko, Fu-Hsiang“…Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. …”
Publicado 2019
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1673“…Porphyrin functionalized reduced graphene oxide (rGO) is attractive for multi-disciplinary research studies, and its improvements for an rGO-based field effect transistor (rGO-FET) were exploited to realize ultrasensitive biochemical and clinical assay. …”
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1674por Wang, Zhongli, Song, Xianneng, Jiang, Yu, Zhang, Jidong, Yu, Xi, Deng, Yunfeng, Han, Yang, Hu, Wenping, Geng, Yanhou“…By bar coating from o‐xylene solution, PDPPT3‐HDO forms aligned films and exhibits high hole mobility of up to 9.24 cm(2) V(−1) s(−1) in organic thin film transistors (OTFTs). Notably, the bar‐coated OTFT based on PDPPT3‐HDO shows a close to ideal transistor model and a high mobility reliability factor of 87%. …”
Publicado 2019
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1675por Sun, Zhonghao, Huang, Huolin, Sun, Nan, Tao, Pengcheng, Zhao, Cezhou, Liang, Yung C.“…A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. …”
Publicado 2019
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1676“…In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. …”
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1677por Park, Seon Joo, Lee, Jiyeon, Seo, Sung Eun, Kim, Kyung Ho, Park, Chul Soon, Lee, Sang Hun, Ban, Hyun Seung, Lee, Byoung Dae, Song, Hyun Seok, Kim, Jinyeong, Lee, Chang-Soo, Bae, Joonwon, Kwon, Oh Seok“…To confirm DA exocytosis based on aptasensors, DA sensitivity and selectivity were monitored using liquid-ion gated field-effect transistors (FETs). The minimum detection level (MDL; 100 pM) of the aptasensors was determined, and their MDL was optimized by controlling the diameter of the CPNTs owing to their different capacities for aptamer introduction. …”
Publicado 2020
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1678“…This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. …”
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1679por Cotrone, Serafina, Cafagna, Damiana, Cometa, Stefania, De Giglio, Elvira, Magliulo, Maria, Torsi, Luisa, Sabbatini, Luigia“…Among the many investigated sensing devices, organic field-effect transistors (OFETs), organic electrochemical transistors (OECTs) and microcantilevers (MCLs) have been chosen. …”
Publicado 2011
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1680por Hsu, You-Ren, Kang, Yen-Wen, Fang, Jung-Ying, Lee, Geng-Yen, Chyi, Jen-Inn, Chang, Chung-ke, Huang, Chih-Cheng, Hsu, Chen-Pin, Huang, Tai-huang, Huang, Yu-Fen, Sun, Yuh-Chang, Hsu, Chia-Hsien, Chen, Chih-Chen, Li, Sheng-Shian, Yeh, J. Andrew, Yao, Da-Jeng, Ren, Fan, Wang, Yu-Lin“…AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). …”
Publicado 2014
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