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  1. 1701
    “…Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. …”
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    Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
  2. 1702
    “…Multilayered heterostructures comprising of In(2)O(3), SnO(2), and Al(2)O(3) were studied for their application in thin‐film transistors (TFT). The compositional influence of tin oxide on the properties of the thin‐film, as well as on the TFT characteristics is investigated. …”
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    Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.
  3. 1703
    “…Efficient charge storage media play a pivotal role in transistor‐based memories and thus are under intense research. …”
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    Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories
  4. 1704
    “…The ion-sensitive field-effect transistor (ISFET) is a popular technology utilized for pH sensing applications. …”
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    Fabrication, Characterization, and Modeling of an Aluminum Oxide-Gate Ion-Sensitive Field-Effect Transistor-Based pH Sensor
  5. 1705
    “…This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.…”
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    Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites
  6. 1706
    “…A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. …”
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    A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor
  7. 1707
    “…In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. …”
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    A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
  8. 1708
    “…In this study, the polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. …”
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    Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
  9. 1709
    “…In this work, we developed a field effect transistor (FET) biosensor based on graphene oxide-graphene (GO/Gr) van der Waals heterostructure for selective and ultrasensitive SARS-CoV-2 proteins detection. …”
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    Graphene oxide-graphene Van der Waals heterostructure transistor biosensor for SARS-CoV-2 protein detection
  10. 1710
    “…[Image: see text] The magnitude of the field-effect mobility μ of organic thin-film and single-crystal field-effect transistors (FETs) has been overestimated in certain recent studies. …”
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    Evaluation of Effective Field-Effect Mobility in Thin-Film and Single-Crystal Transistors for Revisiting Various Phenacene-Type Molecules
  11. 1711
    “…On the other hand, a solution-gated ion-sensitive field-effect transistor (ISFET) has a superior ability to detect ionic charges and includes capacitive membranes on the gate electrode. …”
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    Self-oscillating chemoelectrical interface of solution-gated ion-sensitive field-effect transistor based on Belousov–Zhabotinsky reaction
  12. 1712
    “…In this study, the efficient fabrication of nickel silicide (NiSi(x)) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor properties. …”
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    Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing
  13. 1713
    “…Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. …”
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    Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model
  14. 1714
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    pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
  15. 1715
    “…As far as it is known, this is the first work to utilize conjugated BCPs in an electret‐free photosynaptic transistor showing great potential to the artificial intelligence technology.…”
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    Low‐Energy‐Consumption and Electret‐Free Photosynaptic Transistor Utilizing Poly(3‐hexylthiophene)‐Based Conjugated Block Copolymers
  16. 1716
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    Thermally Stable Organic Field‐Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar‐Blind Photodetectors
  17. 1717
    “…Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations. In this work, we use multilayer α-In(2)Se(3) to realize a ferroelectric channel semiconductor FET, i.e., FeS-FET, whose gate-triggered and polarization-induced resistive switching is then exploited to mimic an artificial synapse. …”
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    An artificial synaptic transistor using an α-In(2)Se(3) van der Waals ferroelectric channel for pattern recognition
  18. 1718
    “…Traditional highly sensitive organic electrochemical transistor (OECT)-based methods mainly rely on good conductivity materials, which may be limited by complex synthesis and modification steps. …”
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    A sensitive platform for DNA detection based on organic electrochemical transistor and nucleic acid self-assembly signal amplification
  19. 1719
    “…PDDBTA showed hole mobilities of up to 4.1 × 10(−2) cm(2) V(−1) s(−1) in organic thin film transistors (OTFTs) as a p-channel material. As a donor in organic photovoltaics (OPVs), power conversion efficiencies (PCEs) of up to 2.18% were achieved, which is the first example of using an azine-based polymer for OPVs. …”
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    Facile synthesis of a semiconducting bithiophene-azine polymer and its application for organic thin film transistors and organic photovoltaics
  20. 1720
    “…Photochemical cyclization of dinaphthylethenes was used as the key step for constructing the picene skeleton. Field-effect transistor (FET) devices of C(n)-PicDIs were fabricated by using ZrO(2) as a gate substrate and their FET characteristics were investigated. …”
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    Facile synthesis of picenes incorporating imide moieties at both edges of the molecule and their application to n-channel field-effect transistors
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