“…Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. …”
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“…Our simulations show that the valence band (VB) edge of MoTe(2) is almost aligned with the conduction band (CB) edge of ZrS(2), and (MoTe(2))(m)/(ZrS(2))(m) (m = 1, 2) heterostructures exhibit the long-sought broken gap band alignment, which is pivotal for realizing tunneling transistors. Electrons are found to spontaneously flow from MoTe(2) to ZrS(2), and the system resembles an ultrascaled parallel plate capacitor with an intrinsic electric field pointed from MoTe(2) to ZrS(2). …”
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“…In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection. …”
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“…Flexible Organic Electrochemical Transistors In article number 2204746, Teppei Araki, Tsuyoshi Sekitani, and co‐workers develop fully transparent and ultra‐thin, and flexible organic electrochemical transistors using additive manufacturing process that reduces damage to nanomaterials. …”
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“…Here, we report the synthesis of the novel n-type naphthalene diimide (NDI)-based small-molecule OMIECs for organic electrochemical transistors (OECTs). The electro-active NDI molecule with the linear ethylene glycol side chains is a promising candidate for n-type channel material to obtain accumulation mode OECTs. …”
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“…We present a fully analytical model and physical investigation on the source resistance (R(S)) in In(x)Ga(1−x)As quantum-well high-electron mobility transistors based on a three-layer TLM system. The R(S) model in this work was derived by solving the coupled quadratic differential equations for each current component with appropriate boundary conditions, requiring only six physical and geometrical parameters, including ohmic contact resistivity (ρ(c)), barrier tunneling resistivity (ρ(barrier)), sheet resistances of the cap and channel regions (R(sh_cap) and R(sh_ch)), side-recessed length (L(side)) and gate-to-source length (L(gs)). …”
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“…The concentration of Cd(2+) is then detected by a graphene field-effect transistor with a Cd(2+) aptamer modifying the graphene channel. …”
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“…We present results of an exposure of Honeywell RICMOS-IV SOI transistors produced in a developmental run to 2*10/sup 14/ 63.3 MeV protons at the UCD cyclotron radiation test beam (27 Mrad (Si)). …”
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“…This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. …”
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“…A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. …”
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“…Herein, we developed a high-performance, potassium-selective field-effect transistor-type biosensor platform based on an amorphous indium gallium zinc oxide coplanar-gate thin-film transistor using a resistive coupling effect with an extended gate containing a potassium-selective membrane. …”
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“…H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. …”
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“…Here, a three-dimensional wrinkled graphene field-effect transistor (3D WG-FET) biosensor for ultra-sensitive detection of ATP is demonstrated. …”
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“…In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN gate HEMTs were investigated by performing the gate step voltage stress and the gate constant voltage stress measurements. …”
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“…The transport characteristics of a gate-all-around Si multiple-quantum-dot (QD) transistor were studied by means of experimental parametrization using theoretical models. …”
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“…The AlGaN/GaN-based ion-sensitive heterostructure field effect transistor (ISHFET) is sensitive to surface charges. …”
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“…The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. …”
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“…Thus, this study aims to combine recombinase polymerase amplification (RPA), which enables the rapid amplification of even trace amounts of nucleic acid fragments within 10–40 min at 37–42 °C, and solution-processed oxide thin-film transistor (TFT) technology, which exhibits high detection sensitivity, to detect Leishmania. …”
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