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  1. 1761
    “…Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. …”
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    Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function
  2. 1762
    “…We reported exciton binding-energy determination using tunneling-current spectroscopy of Germanium (Ge) quantum dot (QD) single-hole transistors (SHTs) operating in the few-hole regime, under 405–1550 nm wavelength (λ) illumination. …”
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    Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pumping
  3. 1763
    “…[Image: see text] The development of solution-processable n-type molecular semiconductors that exhibit high electron mobility (μ(e) ≥ 0.5 cm(2)/(V·s)) under ambient conditions, along with high current modulation (I(on)/I(off) ≥ 10(6)–10(7)) and near-zero turn on voltage (V(on)) characteristics, has lagged behind that of other semiconductors in organic field-effect transistors (OFETs). Here, we report the design, synthesis, physicochemical and optoelectronic characterizations, and OFET performances of a library of solution-processable, low-LUMO (−4.20 eV) 2,2′-(2,8-bis(3-alkylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile small molecules, β,β′-C(n)-TIFDMTs, having varied alkyl chain lengths (n = 8, 12, 16). …”
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    Solution-Processable Indenofluorenes on Polymer Brush Interlayer: Remarkable N-Channel Field-Effect Transistor Characteristics under Ambient Conditions
  4. 1764
    “…Here we experimentally demonstrate a monolithic 3D integration of atomically-thin molybdenum disulfide (MoS(2)) transistors and 3D vertical resistive random-access memories (VRRAMs), with the MoS(2) transistors stacked between the bottom-plane and top-plane VRRAMs. …”
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    Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory
  5. 1765
    “…High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. …”
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    Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors
  6. 1766
    “…Here, a functionalized biosensor based on graphene-based field effect transistor (GFET) modified with heat-denatured casein was developed for the ultrasensitive and label-free detection of the β-gal produced by E. coli in real water samples. …”
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    Functionalized-Graphene Field Effect Transistor-Based Biosensor for Ultrasensitive and Label-Free Detection of β-Galactosidase Produced by Escherichia coli
  7. 1767
    por Avis, Christophe, Jang, Jin
    Publicado 2023
    “…We studied the impact of NF(3) plasma treatment on the HfO(2) gate insulator of amorphous tin oxide (a-SnO(x)) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. …”
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    Influence of NF(3) Plasma-Treated HfO(2) Gate Insulator Surface on Tin Oxide Thin-Film Transistors
  8. 1768
    “…In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored. …”
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    An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network
  9. 1769
    “…Single-walled carbon nanotube (SWCNT) random networks are easily fabricated on a wafer scale, which provides an attractive path to large-scale SWCNT-based thin-film transistor (TFT) manufacturing. However, the mixture of semiconducting SWCNTs and metallic SWCNTs (m-SWCNTs) in the networks significantly limits the TFT performance due to the m-SWCNTs dominating the charge transport. …”
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    Highly enhanced gas sensing in single-walled carbon nanotube-based thin-film transistor sensors by ultraviolet light irradiation
  10. 1770
    “…To detect biofilm formation, we used an ion-sensitive field-effect transistor (ISFET) measurement system to measure pH changes in small volumes of bacterial suspension. …”
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    Detection of Micrococcus Luteus Biofilm Formation in Microfluidic Environments by pH Measurement Using an Ion-Sensitive Field-Effect Transistor
  11. 1771
    “…Both n-channel and p-channel organic field effect transistors are fabricated using pentacene and fullerene as active layers. …”
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    Water soluble poly(1-vinyl-1,2,4-triazole) as novel dielectric layer for organic field effect transistors
  12. 1772
    “…Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. …”
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    Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature
  13. 1773
    “…The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. …”
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    Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter
  14. 1774
    “…In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H(2) sintering process. …”
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    Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H(2) Sintering
  15. 1775
    “…The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. …”
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    Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
  16. 1776
    “…Taken together, the successful PDPDBD's transistor and photoconductor performances with high device stability demonstrated practical applicability of PDPDBD in low-cost and flexible optoelectronic devices.…”
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    High mobility polymer based on a π-extended benzodithiophene and its application for fast switching transistor and high gain photoconductor
  17. 1777
    “…The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. …”
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    Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN
  18. 1778
    “…Organic single-crystal field-effect transistors have been fabricated to study the effects of the central metal atom on their charge transport properties. …”
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    Fluorination of Metal Phthalocyanines: Single-Crystal Growth, Efficient N-Channel Organic Field-Effect Transistors, and Structure-Property Relationships
  19. 1779
    “…Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). …”
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    Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
  20. 1780
    por Farhadi, Rozita, Farhadi, Bita
    Publicado 2014
    “…Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. …”
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    Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices
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