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  1. 1801
    “…The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm(2) V(–1) s(–1) tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp(2)-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.…”
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    Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
  2. 1802
    “…An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.…”
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    Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
  3. 1803
    “…In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of a SiO(x) passivation layer. …”
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    Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiO(x) Passivation Layer
  4. 1804
    “…This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. …”
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    Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors
  5. 1805
    “…The high-quality CsPbI(3) nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. …”
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    Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI(3) Perovskite Nanorods Bilayer Structure
  6. 1806
    “…A fiber-based single-walled carbon nanotube (SWCNT) thin-film-transistor (TFT) has been proposed. We designed complementary SWCNT TFT circuit based on SPICE simulations, with device parameters extracted from the fabricated fiber-based SWCNT TFTs, such as threshold voltage, contact resistance, and off-/gate-leakage current. …”
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    Stable Logic Operation of Fiber-Based Single-Walled Carbon Nanotube Transistor Circuits Toward Thread-Like CMOS Circuitry
  7. 1807
    por Zhou, Yan, Dong, Chengyuan
    Publicado 2018
    “…Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. …”
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    Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
  8. 1808
    “…With highly nonplanar topological configuration, TPA(PDAF)(3) shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field‐effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. …”
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    4,5‐Diazafluorene‐Based Donor–Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory
  9. 1809
    “…The robust and facile strategy presented herein would be applicable in various opto-electronics applications requiring precise control of the molecular assembly, such as organic photovoltaic cells, field-effect transistors, light-emitting diodes, and sensors.…”
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    Controlled Self-Assembly of Conjugated Polymers via a Solvent Vapor Pre-Treatment for Use in Organic Field-Effect Transistors
  10. 1810
    “…Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf(1−x)Zr(x)O(2) (x = 0.33, 0.48, and 0.67) are fabricated and characterized. …”
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    Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf(1−x)Zr(x)O(2)
  11. 1811
    “…In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. …”
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    Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
  12. 1812
    “…Results: A one-transistor memory device which is more compact than DRAM is proposed. …”
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    A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications
  13. 1813
    “…[Image: see text] The properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. …”
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    Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics
  14. 1814
    “…To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). …”
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    Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
  15. 1815
    “…This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap‐free) charge carrier mobility of single‐crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. …”
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    A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study
  16. 1816
    “…By the slight adjustment of oxides constituting thin film transistor-liquid crystal display (TFT-LCD) substrate glass, including equal mole fraction substitution of Al(2)O(3), GeO(2), B(2)O(3), P(2)O(5) and ZrO(2) for SiO(2), as well as the substitution of CaO for SrO with the total contents unchanged, the structural and physico-chemical properties of the glass was investigated by Raman spectroscopy and other measurements. …”
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    Influence of the slight adjustment of oxides on the structural and physico-chemical properties of thin film transistor-liquid crystal display substrate glass
  17. 1817
    “…We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. …”
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    Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods
  18. 1818
    “…Device performances are observed for WSe(2) top-gate transistors by using oxide stacks as the gate dielectric. …”
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    Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures
  19. 1819
    “…[Image: see text] This work describes an array of 1024 ion-sensitive field-effect transistors (ISFETs) using sensor-learning techniques to perform multi-ion imaging for concurrent detection of potassium, sodium, calcium, and hydrogen. …”
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    Complementary Metal–Oxide–Semiconductor Potentiometric Field-Effect Transistor Array Platform Using Sensor Learning for Multi-ion Imaging
  20. 1820
    “…We demonstrate that using nanocomposite thin films consisting of semiconducting polymer, poly(3-hexylthiophene) (P3HT), and electrochemically exfoliated graphene (EEG) for the active channel layer of organic field-effect transistors (OFETs) improves both device performances and mechanical properties. …”
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    Preparation of Nanocomposite-Based High Performance Organic Field Effect Transistor via Solution Floating Method and Mechanical Property Evaluation
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