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  1. 1841
    “…Here, the events of capturing and emitting a single hydrogen ion (H(+)) at the solid/liquid interface are directly detected using sub–10-nm electrical double layer–gated silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs are fabricated using a complementary metal-oxide-semiconductor compatible process, with a surface reassembling step to minimize the device noise. …”
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    Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
  2. 1842
    “…Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. …”
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    Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates
  3. 1843
    “…This tunable band gap renders MoS(2) a suitable conducting channel for field-effect transistors (FETs). In addition, the highly sensitive surface potential in MoS(2) layers allows the feasibility of FET applications in biosensors, where direct immobilization and detection of biological molecules are conducted in wet conditions. …”
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    Effect of Al(2)O(3) Passive Layer on Stability and Doping of MoS(2) Field-Effect Transistor (FET) Biosensors
  4. 1844
    “…The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. …”
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    Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene
  5. 1845
    por Kim, Doyeon, Yoon, Minho, Lee, Jiyoul
    Publicado 2021
    “…Herein, we report the fabrications of high-performance polymer field-effect transistors (PFETs) with wire bar-coated semiconducting polymer film as an active layer. …”
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    Enhanced Performance of Cyclopentadithiophene-Based Donor-Acceptor-Type Semiconducting Copolymer Transistors Obtained by a Wire Bar-Coating Method
  6. 1846
    por Avis, Christophe, Jang, Jin
    Publicado 2021
    “…Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. …”
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    Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO(2) Thin-Film Transistors and Applications to Circuits
  7. 1847
    por Park, Ki-Woong, Cho, Won-Ju
    Publicado 2022
    “…Therefore, sputter-based IGZO nanowires were obtained in this study using electrospun PVP nanofibers as an etching mask to overcome the limitations of conventional electrospun IGZO nanofibers. Field-effect transistors (FETs) were fabricated using two types of channels, that is, the nanofiber template-transferred IGZO nanowires and electrospun IGZO nanofibers. …”
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    High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer
  8. 1848
    por Wu, Chi-Chang
    Publicado 2022
    “…Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. …”
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    Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection
  9. 1849
    “…In this work, we report an improved indium oxide (In(2)O(3)) nanoribbon field-effect transistor (FET) biosensor platform detecting both SARS-CoV-2 antigen and antibody. …”
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    Highly sensitive, scalable, and rapid SARS-CoV-2 biosensor based on In(2)O(3) nanoribbon transistors and phosphatase
  10. 1850
    “…To utilize continuous ultralow intensity signals from oxide synaptic transistors as artificial synapses that mimic human visual perception, we propose strategic oxide channels that optimally utilize their advantageous functions by stacking two oxide semiconductors with different conductivities. …”
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    Design of Functionally Stacked Channels of Oxide Thin-Film Transistors to Mimic Precise Ultralow-Light-Irradiated Synaptic Weight Modulation
  11. 1851
    “…Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO(4) (IGZO) channel are fabricated at room temperature. …”
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    Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
  12. 1852
    “…Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. …”
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    Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation
  13. 1853
    “…Intrinsically stretchable transistors have advantages in many aspects. However, integration of intrinsically stretchable layers to achieve stretchable transistors is still challenging. …”
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    Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process
  14. 1854
    “…Many health-related diagnostics are expensive, time consuming and invasive. Organic thin film transistor (OTFT) based devices show promise to enable rapid, low cost diagnostics that are an important aspect to enabling increased access and availability to healthcare. …”
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    P and N type copper phthalocyanines as effective semiconductors in organic thin-film transistor based DNA biosensors at elevated temperatures
  15. 1855
    “…We present a carbon nanotube-field effect transistor (CNT-FET) biosensor which first implements the chemodosimeter sensing principle in CNT nanoelectronics. …”
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    A chemodosimeter-modified carbon nanotube-field effect transistor: toward a highly selective and sensitive electrical sensing platform
  16. 1856
    “…We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al(2)O(3)) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (T(dep)). …”
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    Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties
  17. 1857
    “…This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. …”
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    Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
  18. 1858
    “…High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices. …”
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    Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors
  19. 1859
    “…Field-effect transistor-based biosensors (bio-FETs) are promising candidates for the rapid high-sensitivity and high-selectivity sensing of various analytes in healthcare, clinical diagnostics, and the food industry. …”
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    Effect of DNA Aptamer Concentration on the Conductivity of a Water-Gated Al:ZnO Thin-Film Transistor-Based Biosensor
  20. 1860
    “…To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed high performance GQD-decorated In(2)O(3) thin-film transistors (TFTs) based on ZrO(2) as gate dielectrics. …”
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    High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In(2)O(3) channel layers
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