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  1. 1861
    “…A new S/D trimming process was proposed to significantly reduce the parasitic RC of gate-all-around (GAA) nanosheet transistors (NS-FETs) while retaining the channel stress from epitaxy S/D stressors at most. …”
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    Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets
  2. 1862
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    Simultaneous recording of electrical and metabolic activity of cardiac cells in vitro using an organic charge modulated field effect transistor array
  3. 1863
    “…SWCNT gas sensors are mainly based on field-effect transistors (SWCNT-FETs) where the modification of the current flowing through the nanotube is used for gas detection. …”
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    Simple and rapid gas sensing using a single-walled carbon nanotube field-effect transistor-based logic inverter
  4. 1864
    “…High-quality graphene materials and high-performance graphene transistors have attracted much attention in recent years. …”
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    Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors
  5. 1865
    “…Herein, an ultrasensitive visual sensor with phototransistor architecture consisting of AlGaN/GaN high‐electron‐mobility‐transistor (HEMT) and two‐dimensional Ruddlesden–Popper organic–inorganic halide perovskite (2D OIHP) is reported. …”
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    Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
  6. 1866
    “…The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al(2)O(3)/HfO(2) insulator. …”
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    Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
  7. 1867
    “…A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. …”
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    A Vertical Single Transistor Neuron with Core–Shell Dual-Gate for Excitatory–Inhibitory Function and Tunable Firing Threshold Voltage
  8. 1868
    “…In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. …”
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    High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display
  9. 1869
    “…We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. …”
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    Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature
  10. 1870
    “…Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. …”
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    Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor
  11. 1871
    “…Phthalocyanine-based organic thin-film transistors (OTFTs) have been demonstrated as sensors for a range of analytes, including cannabinoids, in both liquid and gas phases. …”
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    Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor
  12. 1872
    “…The roll-to-roll (R2R) gravure process has the potential for manufacturing single-wall carbon nanotubes (SWCNT)-based thin film transistor (TFT) arrays on a flexible plastic substrate. …”
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    Rapid Uniformity Analysis of Fully Printed SWCNT-Based Thin Film Transistor Arrays via Roll-to-Roll Gravure Process
  13. 1873
    por Kim, Somi, Yoo, Hochen, Choi, Jaeyoung
    Publicado 2023
    “…Hysteresis in organic field-effect transistors is attributed to the well-known bias stress effects. …”
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    Effects of Charge Traps on Hysteresis in Organic Field-Effect Transistors and Their Charge Trap Cause Analysis through Causal Inference Techniques
  14. 1874
    por Looten, A, Baldinger, E, Simmen, A
    Publicado 1967
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    Comportement inedit d'un montage avec transistors en collecteur commun - utilisation comme allongeur et amplificateur d'impulsions
  15. 1875
    por Faccio, F
    Publicado 1997
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    Etude des transistors MOS avancés sur Silicium sur isolant (SOI): bruit, dégradation et environnement radiatif et applications
  16. 1876
    “…In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. …”
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    Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors
  17. 1877
    “…[Image: see text] Emergent bioelectronic technologies are underpinned by the organic electrochemical transistor (OECT), which employs an electrolyte medium to modulate the conductivity of its organic semiconductor channel. …”
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    Enhanced Organic Electrochemical Transistor Performance of Donor–Acceptor Conjugated Polymers Modified with Hybrid Glycol/Ionic Side Chains by Postpolymerization Modification
  18. 1878
    “…Here, we performed experiments to reduce the Schottky barrier height of MoS(2) field-effect transistors (FETs) by lowering the work function (Ф(m) = E(vacuum) − E(F,metal)) of the contact metal. …”
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    Schottky barrier height engineering on MoS(2) field-effect transistors using a polymer surface modifier on a contact electrode
  19. 1879
    “…This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor’s effective mobility (µ(eff)) as high as 357 and 325 cm(2)/V-s at electron density (Q(e)) of 5 × 10(12) cm(−2) and an ultra-thin body thickness (T(body)) of 7 nm and 5 nm, respectively. …”
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    Superior High Transistor’s Effective Mobility of 325 cm(2)/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
  20. 1880
    “…The influences of solution concentrations and annealing temperatures on the n-doping effect were investigated in detail. The CN-PPV–G transistors fabricated with the optimized parameters demonstrate active sensing abilities toward NO(2). …”
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    Enabling Quick Response to Nitrogen Dioxide at Room Temperature and Limit of Detection to Ppb Level by Heavily n-Doped Graphene Hybrid Transistor
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