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  1. 1881
    “…High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. …”
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    Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes
  2. 1882
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    A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current
  3. 1883
    “…As the core component of the organic field-effect transistor (OFET), the rational design and judicious selection of the structure of organic semiconductor materials are crucial to enhance the performance of devices. …”
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    Synergistic Use of All-Acceptor Strategies for the Preparation of an Organic Semiconductor and the Realization of High Electron Transport Properties in Organic Field-Effect Transistors
  4. 1884
    “…We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe(2)/h-BN heterojunctions. …”
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    Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe(2)/h-BN Field-Effect Transistor
  5. 1885
    por Zhang, Xuan, Cho, Sung Woon
    Publicado 2023
    “…In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used in the BCWE process cause unintended performance degradation of oxide semiconductors, making it difficult to implement oxide TFT circuits through industrial-scale metallization processes. …”
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    Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors
  6. 1886
    por Oh, Jong Hyeok, Yu, Yun Seop
    Publicado 2023
    “…In this study, the electrical characteristics and electrical coupling effect for monolithic 3-dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM-FBFET) were investigated using technology computer-aided design. …”
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    Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD
  7. 1887
    “…This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. …”
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    High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation
  8. 1888
    “…The purpose of this study was to detect saccharide-protein interaction capitalizing on the gel-modified field effect transistor [FET]. A lectin-sensitive polymer gel that undergoes volume changes in response to the formation of molecular complex between 'pendant' carbohydrate and a 'target' lectin concanavalin A [Con A] was synthesized. …”
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    Preparation of α-mannoside hydrogel and electrical detection of saccharide-protein interactions using the smart gel-modified gate field effect transistor
  9. 1889
    “…The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. …”
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    Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
  10. 1890
    “…The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. …”
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    Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application
  11. 1891
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    CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
  12. 1892
    “…In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. …”
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    Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors
  13. 1893
    “…An olfactory biosensor based on a reduced graphene oxide (rGO) field‐effect transistor (FET), functionalized by the odorant‐binding protein 14 (OBP14) from the honey bee (Apis mellifera) has been designed for the in situ and real‐time monitoring of a broad spectrum of odorants in aqueous solutions known to be attractants for bees. …”
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    Electronic Olfactory Sensor Based on A. mellifera Odorant‐Binding Protein 14 on a Reduced Graphene Oxide Field‐Effect Transistor
  14. 1894
    “…With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.…”
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    Integrating Epitaxial-Like Pb(Zr,Ti)O(3) Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
  15. 1895
    “…Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. …”
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    Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
  16. 1896
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    Hybrid Cluster Precursors of the LaZrO Insulator for Transistors: Properties of High-Temperature-Processed Films and Structures of Solutions, Gels, and Solids
  17. 1897
    “…Biocompatible silk fibroin (SF):poly(vinyl alcohol) (PVA) blends were prepared as the dielectric layers of organic field-effect transistors (OFETs). Compared with those with pure SF dielectric layer, an optimal threshold voltage of ~0 V, high on/off ratio of ~10(4), and enhanced field-effect mobility of 0.22 cm(2)/Vs of OFETs were obtained by carefully controlling the weight ratio of SF:PVA blends to 7:5. …”
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    Biocompatible/Degradable Silk Fibroin:Poly(Vinyl Alcohol)-Blended Dielectric Layer Towards High-Performance Organic Field-Effect Transistor
  18. 1898
    por Xiang, Lanyi, Wang, Wei, Xie, Wenfa
    Publicado 2016
    “…Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. …”
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    Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer
  19. 1899
    por Tan, Cher Ming, Chen, Xiangchen
    Publicado 2014
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    Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach
  20. 1900
    “…Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. …”
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    Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
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