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  1. 1901
    “…Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. …”
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    Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
  2. 1902
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    High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
  3. 1903
    “…In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F(4)TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. …”
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    Effects of the F(4)TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors
  4. 1904
    “…We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. …”
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    Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics on Flexible Substrates
  5. 1905
    “…Herein, a new strategy for highly sensitive protein detection at sub‐femtomolar levels without any labelling has been demonstrated by using an organic field‐effect transistor (OFET). An artificial histidine‐rich protein receptor (Ni(II)‐nitrilotriacetic acid complex, Ni(II)‐nta) functionalizes a detection portion (i.e. an extended‐gate electrode) of the fabricated OFET device. …”
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    Label‐Free Direct Electrical Detection of a Histidine‐Rich Protein with Sub‐Femtomolar Sensitivity using an Organic Field‐Effect Transistor
  6. 1906
    “…In that regard, organic filed‐effect transistors (OFETs) are some of the most promising platforms for construction of on‐site testing systems. …”
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    Label‐Free Direct Electrical Detection of a Histidine‐Rich Protein with Sub‐Femtomolar Sensitivity using an Organic Field‐Effect Transistor
  7. 1907
    “…We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. …”
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    Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film
  8. 1908
    “…In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (T(IGZO)) are investigated. …”
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    Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
  9. 1909
    “…Few-layer 2H-MoTe(2) with an amorphous boron nitride (a-BN) covering layer was synthesized as a channel for back-gated field effect transistors (FET) and compared to uncovered MoTe(2). …”
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    Hexagonal MoTe(2) with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
  10. 1910
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    Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing
  11. 1911
    “…The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (R(L)(1), R(L)(2), R(L)(3) and R(L)(4)). …”
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    Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
  12. 1912
    “…In this unique design of the DC flow field-effect-transistor (DC-FFET), a pair of face-to-face external gate terminals are imposed with opposite gate-voltage polarities. …”
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    On the Bipolar DC Flow Field-Effect-Transistor for Multifunctional Sample Handing in Microfluidics: A Theoretical Analysis under the Debye–Huckel Limit
  13. 1913
    “…Al 2.2-atom %-doped SnO(x) thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec(−1), increased on/off current ratio of ~8 × 10(7), threshold voltage (V(th)) near 0 V, and markedly reduced (by 81%) V(th) instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. …”
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    Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
  14. 1914
    por Seo, Dongwook, Chang, Jiwon
    Publicado 2019
    “…Two-dimensional (2-D) materials such as MoS(2) and phosphorene provide an ideal platform to realize extremely thin body metal-oxide-semiconductor field effect transistors (MOSFETs) which is highly immune to short channel effects in the ultra-scaled regime. …”
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    Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene
  15. 1915
    “…Surface-emitting organic light-emitting transistors (OLETs) could well be a core element in the next generation of active-matrix (AM) displays. …”
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    Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies
  16. 1916
    “…[Image: see text] Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around −5.6 eV). …”
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    Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
  17. 1917
    “…The polymer demonstrates promising performance in a field‐effect transistor device with saturated hole mobility up to 2 cm(2) V(−1) s(−1) obtained under relatively low gate voltages of −30 V. …”
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    Diseleno[3,2‐b:2′,3′‐d]selenophene‐Containing High‐Mobility Conjugated Polymer for Organic Field‐Effect Transistors
  18. 1918
    “…The fermi-level pinning phenomenon, which occurs at the metal–semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. …”
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    Improvement of the Bias Stress Stability in 2D MoS(2) and WS(2) Transistors with a TiO(2) Interfacial Layer
  19. 1919
    “…The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔV(T)) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by donor creation in a-IGZO active regions when both current flows and a high lateral electric field were present. …”
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    Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
  20. 1920
    “…In organic thin-film transistors, such morphological changes in the blend induce a positive effect on the field-effect mobility, as the mobility is ~5–7 times higher than in the pristine P3HT. …”
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    Selective Wet-Etching of Polymer/Fullerene Blend Films for Surface- and Nanoscale Morphology-Controlled Organic Transistors and Sensitivity-Enhanced Gas Sensors
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