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  1. 1921
    “…We present a low-cost, sensitive and specific DNA field-effect transistor sensor for the rapid detection of a common mutation to the tumour protein 53 gene (TP53). …”
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    Establishing a Field-Effect Transistor Sensor for the Detection of Mutations in the Tumour Protein 53 Gene (TP53)—An Electrochemical Optimisation Approach
  2. 1922
    “…Logic NAND, NOT, AND, NOR, and OR gates, which typically require a large number of CMOS transistors, can be realized by a single SMG‐MOS transistor. …”
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    Bottom‐Gate Approach for All Basic Logic Gates Implementation by a Single‐Type IGZO‐Based MOS Transistor with Reduced Footprint
  3. 1923
    “…Thin-film transistor (TFT)-driven full-color organic light-emitting diodes (OLEDs) with vertically stacked structures are developed herein using photolithography processes, which allow for high-resolution displays of over 2,000 pixels per inch. …”
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    Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays
  4. 1924
    “…The characteristics of a glucose sensor based on an ion-sensitive TiO(2)/Ti extended gate electrode field-effect transistor (EGFET) are reported. A glucose oxidase-containing silk fibroin membrane was immobilized on a TiO(2)/Ti surface as the bio-sensing component. …”
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    Characteristics of an Extended Gate Field-Effect Transistor for Glucose Sensing Using an Enzyme-Containing Silk Fibroin Membrane as the Bio-Chemical Component
  5. 1925
    “…The SS in our MoS(2) field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. …”
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    Effects of Charge Trapping at the MoS(2)–SiO(2) Interface on the Stability of Subthreshold Swing of MoS(2) Field Effect Transistors
  6. 1926
    “…Contactless electroreflectance studies coupled with numerical calculations are performed on in-situ SiN(x) capped N-polar III-nitride high electron mobility transistor (HEMT) structures with a scaled channel thickness in order to analyse the built-in electric field in the GaN channel layer. …”
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    SiN(x)/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy
  7. 1927
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    A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity
  8. 1928
    “…InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. …”
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    Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
  9. 1929
    “…An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF(4) plasma treatment to investigate its reliable applicability to high-power devices and circuits. …”
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    Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
  10. 1930
    “…This study develops an ultrasensitive electrical device, the silicon nanowire-field effect transistor (SiNW-FET) for detection of cardiac troponin I (cTnI) in obesity induced myocardial injury. …”
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    Utilization of silicon nanowire field-effect transistors for the detection of a cardiac biomarker, cardiac troponin I and their applications involving animal models
  11. 1931
    “…Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. …”
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    Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer
  12. 1932
    “…The electron‐deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n‐type organic field‐effect transistors (OFETs). Solution‐processed OFETs based on TCNBT IDT exhibited a charge‐carrier mobility of up to μ (e)≈0.15 cm(2) V(−1) s(−1) with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.…”
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    One‐Step Sixfold Cyanation of Benzothiadiazole Acceptor Units for Air‐Stable High‐Performance n‐Type Organic Field‐Effect Transistors
  13. 1933
    por Ando, Masahiko, Yoneya, Makoto
    Publicado 2021
    “…We developed active-matrix in-plane switching liquid crystal displays (IPS-LCDs) with a new vertical structure composed of thin-film transistors (TFTs) that have an aperture ratio of 60% to reduce energy consumption. …”
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    Enhanced thin-film transistor driven high-aperture in-plane switching liquid crystal displays without common line and black matrix
  14. 1934
    “…AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. …”
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    Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
  15. 1935
    “…[Image: see text] In this study, photonic curing is used to rapidly and effectively convert metal-oxide sol–gels to realize high-quality thin-film transistors (TFTs). Photonic curing offers advantages over conventional thermal processing methods such as ultrashort processing time and compatibility with low-temperature substrates. …”
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    Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors
  16. 1936
    “…Despite intense experimental studies of graphene field effect transistor as DNA hybridization detector, the mechanism of detection and changes in the electrical properties of the device is not investigated in detail. …”
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    Real-time label-free detection of DNA hybridization using a functionalized graphene field effect transistor: a theoretical study
  17. 1937
    “…By a sol–gel method, a BiFeO(3) (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. …”
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    Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO(3) Capacitor
  18. 1938
    “…Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. …”
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    Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)
  19. 1939
    “…[Image: see text] Self-assembled monolayers (SAMs) of organic molecules are frequently employed to improve the electrical performance of organic field-effect transistors (OFETs). However, the relationship between SAM properties and OFET performance has not been fully explored, leading to an incomplete understanding of the system. …”
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    Effect of Variations in the Alkyl Chain Lengths of Self-Assembled Monolayers on the Crystalline-Phase-Mediated Electrical Performance of Organic Field-Effect Transistors
  20. 1940
    “…The organic electrochemical transistor (OECT) has undeniably become a predominant device for mixed conduction materials, offering impressive transconduction properties alongside a relatively simple device architecture. …”
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    Molecular Design Strategies toward Improvement of Charge Injection and Ionic Conduction in Organic Mixed Ionic–Electronic Conductors for Organic Electrochemical Transistors
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