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  1. 1941
    por Dou, Wei, Tan, Yuanyuan
    Publicado 2020
    “…Such DG TFTs are promising for ion-sensitive field-effect transistors sensor applications with low-power consumptions.…”
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    Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation
  2. 1942
    “…A graphene-based ion sensitive field effect transistor (GISFET) has been developed and investigated in terms of its ion sensing performance. …”
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    Direct measurement of K(+) ion efflux from neuronal cells using a graphene-based ion sensitive field effect transistor
  3. 1943
    “…In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In(2)O(3) thin films and ZrO(x) gate dielectrics, as well as the fabrication of In(2)O(3)-based TFTs. …”
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    Fully solution-induced high performance indium oxide thin film transistors with ZrO(x) high-k gate dielectrics
  4. 1944
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    Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method
  5. 1945
    “…Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). …”
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    Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
  6. 1946
    “…The oligomer is a P-type semiconductor material with a good thermal stability and solubility, which can be used to fabricate organic field effect transistors (OFETs) by the spin coating technique. The OFET with n-octadecanylltrichlorosilane (OTS)-modified SiO(2) dielectric layer exhibited a mobility of 1.6 × 10(−3) cm(2)/Vs.…”
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    A Novel Donor-Acceptor Thiophene-Containing Oligomer Comprising Dibenzothiophene-S,S-dioxide Units for Solution-Processable Organic Field Effect Transistor
  7. 1947
    “…The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. …”
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    Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors
  8. 1948
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    Superhydrophobic Paper-Based Microfluidic Field-Effect Transistor Biosensor Functionalized with Semiconducting Single-Walled Carbon Nanotube and DNAzyme for Hypocalcemia Diagnosis
  9. 1949
    “…Finally, an enhancement-mode H-diamond field effect transistor was obtained with a V(TH) of −0.5 V. Its I(DMAX) is −21.9 mA/mm when V(GS) is −5, V(DS) is −10 V. …”
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    Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnO(x) Dielectric Layer Formed by Thermal Oxidation of Sn
  10. 1950
    “…Here, vdW metal oxide MoO(3) is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS(2) to visible light, we obtained a field effect transistor for photodetection. …”
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    High-κ van der Waals Oxide MoO(3) as Efficient Gate Dielectric for MoS(2) Field-Effect Transistors
  11. 1951
    “…The results indicate the successful fabrication of a promising field effect transistor biosensor for COVID-19 diagnosis.…”
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    Real-time COVID-19 detection via graphite oxide-based field-effect transistor biosensors decorated with Pt/Pd nanoparticles
  12. 1952
    “…We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI(4)-doped (PEA)(2)SnI(4) films. …”
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    Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices
  13. 1953
    “…We present a graphene field-effect transistor (gFET) biosensor design, which exploits the Spike-ACE2 interaction, the crucial step for SARS-CoV-2 infection. …”
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    SARS-CoV-2 multi-variant rapid detector based on graphene transistor functionalized with an engineered dimeric ACE2 receptor
  14. 1954
    “…The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. …”
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    Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns
  15. 1955
    “…One of the circuit topologies for the implementation of unipolar integrated circuits (circuits that use either p-channel or n-channel transistors, but not both) is the zero-V(GS) architecture. …”
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    High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays
  16. 1956
    “…Lowering dopant activation of select transistors results from complex integrated processes. …”
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    Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash
  17. 1957
    “…Herein, a solution‐gated graphene transistor (SGGT) biosensor for the ultrasensitive and rapid quantification detection of the early prostate cancer‐relevant biomarker, miRNA‐21 is reported. …”
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    Unamplified and Real‐Time Label‐Free miRNA‐21 Detection Using Solution‐Gated Graphene Transistors in Prostate Cancer Diagnosis
  18. 1958
    “…[Image: see text] Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. …”
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    Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics
  19. 1959
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    Transient conductance spectroscopy measurements of defect states in gamma-irradiated n-channel silicon field effect transistors with possible gamma-dosemeter applications
  20. 1960
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    Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI)
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