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  1. 1961
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    A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules
  2. 1962
    “…[Image: see text] This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional electron gas (2DEG) of high-electron mobility transistor (HEMT) structures. The widely used technology for the preparation of GaN channels in AlGaN/GaN HEMT transistors is growth at a high temperature of around 1000 °C in an H(2) atmosphere. …”
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    Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface
  3. 1963
    “…In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). …”
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    A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor
  4. 1964
    “…Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. …”
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    Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion
  5. 1965
    “…Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μ(FE)), lower I(OFF), and excellent stability under bias stress. …”
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    Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor
  6. 1966
    “…The effect of the channel interface of top-gate InGaZnO (IGZO) thin film transistors (TFTs) on the electrical properties caused by exposure to various wet chemicals such as deionized water, photoresist (PR), and strippers during the photolithography process was studied. …”
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    Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors
  7. 1967
    “…Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In(2)Se(3) is utilized to regulate the channel conductance. …”
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    Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In(2)Se(3) for stacked in-memory computing array
  8. 1968
    “…To give consideration to both chip density and device performance, an In(0.53)Ga(0.47)As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P(+)-pocket and an In(0.52)Al(0.48)As-block (VPB-EHBTFET) is introduced and systematically studied by TCAD simulation. …”
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    A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P(+)-Pocket and InAlAs-Block
  9. 1969
    “…A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. …”
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    A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
  10. 1970
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    Two-Dimensional Carrier Distribution in Top-Gate Polymer Field-Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy
  11. 1971
    “…This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. …”
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    A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
  12. 1972
    “…Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. …”
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    The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
  13. 1973
    “…To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO(3) nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). …”
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    Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system
  14. 1974
    por Truong, Minh Anh, Nakano, Koji
    Publicado 2016
    “…Organic field-effect transistors (OFETs) were fabricated with these compounds as organic semiconductors, and their semiconducting properties were evaluated. …”
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    Syntheses of dibenzo[d,d']benzo[2,1-b:3,4-b']difuran derivatives and their application to organic field-effect transistors
  15. 1975
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    Retraction: Integrating Epitaxial-Like Pb(Zr,Ti)O(3) Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
  16. 1976
    “…Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. …”
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    The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors
  17. 1977
    “…In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. …”
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    Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
  18. 1978
    “…In addition, we confirmed that a monolayer MoS(2) transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. …”
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    A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
  19. 1979
    “…Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. …”
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    Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates
  20. 1980
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    Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
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