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201por Talalaev, Vadim, Kryzhanovskaya, Natalia, Tomm, Jens W., Rutckaia, Viktoriia, Schilling, Joerg, Zhukov, Alexey“…The development of a fast semiconductor laser is required for the realization of next-generation telecommunication applications. …”
Publicado 2019
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202por Toda, Keiichiro, Tamamitsu, Miu, Nagashima, Yu, Horisaki, Ryoichi, Ideguchi, Takuro“…Here, we develop a simple add-on optical unit, comprising of an amplitude-modulated mid-infrared semiconductor laser, that is attached to a standard microscope platform to deliver the additional molecular contrast of the specimen on top of its conventional microscopic image, based on the principle of photothermal effect. …”
Publicado 2019
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203“…Solution processed semiconductor lasers have achieved much success across the nanomaterial research community, including in organic semiconductors(1,2), perovskites(3,4) and colloidal semiconductor nanocrystals(5,6). …”
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204“…The theoretic findings have been validated in the experiment with a representative vibration measurement on a SAW filter at [Formula: see text] with our heterodyne laser-Doppler interferometer with offset-locked semiconductor lasers. The provided formulas help instrument designers and users to choose suitable instrument parameters, especially the numerical aperture of the utilized microscope objective.…”
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205por Qi, Xiaoqiong, Loh, Hui Yi, Taimre, Thomas, Bertling, Karl, Indjin, Dragan, Rakić, Aleksandar D.“…Our findings add to the understanding of the optical feedback dynamics under multiple ECRTs and provide a pathway for selecting the appropriate numerical model to study the optical feedback dynamics in THz QCLs and semiconductor lasers in general.…”
Publicado 2022
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206por Wang, Hui“…A member of the US National Academy of Engineering, he developed the world’s fastest and most powerful mode-locked semiconductor laser. I have known Professor Delfyett since 2011, when he took part in the CIOMP-OSA International Summer Session. …”
Publicado 2023
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207por Bes, Daniel R“…Additions and changes found in the second edition include; a more friendly presentation to Hilbert spaces; more practical applications e.g. scanning tunneling microscope (potential barrier); quantum dots (single-particle states in semiconductors); lasers and masers (induced emission); real experiments that have recently provided a qualitative change in the foundations of quantum physics; and an outline of the density matrix formalism as applied to a simple model of decoherence. from reviews of the first edition: "Daniel Bes clearly understands that accuracy, clarity and brevity … has therefore made a careful selection of the topics to make an accessible concise book on quantum mechanics for a modern introductory undergraduate course... …”
Publicado 2007
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208“…There has been growing interest in the model of semiconductor lasers with non-Markovian relaxation. This book develops a non-Markovian model for the optical gain in semiconductor materials, taking into account the rigorous electronic band-structure and the non-Markovian relaxation using the quantum statistical reduced-density operator formalism. …”
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209“…In 1996, this approach was abandoned in favor of a system based on directly modulated semiconductor laser transmitters. This configuration was subsequently adopted as baseline choice by the CMS experiment for its tracker readout system. \\ \\In view of qualifying the radiation hardness of all optical link components to be installed at LHC front-ends, extensive validation tests took place in 1997 and 1998. …”
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210“…Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. …”
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211por Takeuchi, Shungo, Hasegawa, Mikio, Kanno, Kazutaka, Uchida, Atsushi, Chauvet, Nicolas, Naruse, Makoto“…Ultrafast solution of MAB problems has been demonstrated by utilizing chaotically oscillating time series generated by semiconductor lasers. In this study, we experimentally demonstrate a MAB algorithm incorporating laser chaos time series in a wireless local area network (WLAN). …”
Publicado 2020
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212por Kari, Nuerguli, Zannotti, Marco, Giovannetti, Rita, Maimaiti, Patigu, Nizamidin, Patima, Abliz, Shawket, Yimit, Abliz“…The thin film was deposited on the surface of potassium ion-exchanged glass substrate, using vacuum spin-coating method, and a semiconductor laser light (532 nm) as the guiding light. …”
Publicado 2021
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213por Zhang, Fabi, Zhang, Jin, Huang, Lijie, Liu, Shangfeng, Luo, Wei, Kang, Junjie, Liang, Zhiwen, Cao, Jiakang, Zhang, Chenhui, Wang, Qi, Yuan, Ye“…Therefore, our results act as important experience for the semipolar nitride semiconductor laser device preparation, particularly for the epitaxy of microcavity structure through providing the crystalline evolution.…”
Publicado 2022
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214por Zhang, Xiao-ling, Liu, Yan, Fan, Ting, Hu, Ning, Yang, Zhong, Chen, Xi, Wang, Zhen-yu, Yang, Jun“…Furthermore, the selection of a small and high-stability semiconductor laser and matrix CCD detector as well as a microfluidic system aids in the realization of a miniaturized and multichannel device. …”
Publicado 2017
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215“…This study evaluated the effectiveness of a novel 445-nm semiconductor laser in reducing bacteria after chemomechanical root canal treatment. …”
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216por Remis, Andres, Monge-Bartolome, Laura, Paparella, Michele, Gilbert, Audrey, Boissier, Guilhem, Grande, Marco, Blake, Alan, O’Faolain, Liam, Cerutti, Laurent, Rodriguez, Jean-Baptiste, Tournié, Eric“…Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. …”
Publicado 2023
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217por Zhang, Yunshan, Gu, Hongming, Ma, Guolong, Guan, Shijian, Fang, Tao, Chen, Xiangfei“…A novel high-speed directly modulated two-section distributed-feedback (TS-DFB) semiconductor laser based on the detuned-loading effect is proposed and simulated. …”
Publicado 2023
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218por Yin, Huijuan, Li, Yingxin, Zheng, Yongtang, Ye, Xuying, Zheng, Liqing, Li, Chunyan, Xue, Zhixiao“…Virus particles including HIV-1(IIIB), resistant HIV-1 variants, HIV-1 clinical variants, and HIV-2 variants were incubated with HMME for 40 min, followed by irradiation with a 630-nm semiconductor laser at an energy density of 0.3 J/cm(2). …”
Publicado 2011
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219“…Semiconductor laser devices are readily available and practical radiation sources providing wavelength tenability and high monochromaticity. …”
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220por Marko, Igor P., Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O’Reilly, Eoin P., Sweeney, Stephen J.“…Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. …”
Publicado 2016
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