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  1. 1761
    “…We developed a method to control the structure of CdTe nanowires by adopting Bi-mixed CdTe powder source to a catalyst-assisted chemical vapor deposition, which allowed us to fabricate CdTe/CdS hierarchical nanostructures. …”
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    Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications
  2. 1762
    “…This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. …”
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    Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
  3. 1763
    “…CONCLUSION: DTG is cost-effective in the management of TE INI naive patients in France, from a collective perspective. …”
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    Cost-Effectiveness of Dolutegravir in HIV-1 Treatment-Experienced (TE) Patients in France
  4. 1764
    “…This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg(1 − x)Cd(x)Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg(0.35)Cd(0.65)Te/HgTe/Hg(0.35)Cd(0.65)Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. …”
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    Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
  5. 1765
    “…Superhydrophobic particulate films were fabricated via deposition of raspberry-like fluorescent PS/CdTe/silica microspheres on clean glass substrates and surface modification. …”
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    Raspberry-like PS/CdTe/Silica Microspheres for Fluorescent Superhydrophobic Materials
  6. 1766
    “…Ge(2)Sb(2)Te(5) and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. …”
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    Competing covalent and ionic bonding in Ge-Sb-Te phase change materials
  7. 1767
    “…Superconducting critical temperature T(c)(x) in ZrTe(3−x)Se(x) (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. …”
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    Superconductivity and Charge Density Wave in ZrTe(3−x)Se(x)
  8. 1768
    “…In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe(5). Owing to the large g factor in ZrTe(5), the Zeeman splitting can be observed at magnetic field as low as 3 T. …”
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    Zeeman splitting and dynamical mass generation in Dirac semimetal ZrTe(5)
  9. 1769
    “…Here, we report the experimental observation of an electron source at 60° twin boundaries in Bi(2)Te(3), a representative layered-chalcogenide material. …”
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    Free-electron creation at the 60° twin boundary in Bi(2)Te(3)
  10. 1770
    “…CdTe thin-film solar cells are now the main industrially established alternative to silicon-based photovoltaics. …”
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    In-depth analysis of chloride treatments for thin-film CdTe solar cells
  11. 1771
    “…Here we unprecedentedly present the size dependence of crystallization for Ge(2)Sb(2)Te(5) (GST) NPs, whose production is currently highly challenging for chemical synthesis or top-down fabrication. …”
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    Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles
  12. 1772
    “…SnTe is a promising thermoelectric and topological insulator material. …”
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    Carrier concentration dependence of structural disorder in thermoelectric Sn(1−x)Te
  13. 1773
    “…In this work, the reflectance, optical absorption, and band gap have been determined for CdTe thin films grown on planar and microstructured substrates. …”
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    Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate
  14. 1774
    “…The gene silencing mechanism of teRNA was in an Ago2-dependent manner with no interferon response. …”
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    Effects of Triple Effective RNA (teRNA) on the Inhibition of Hepatocellular Carcinoma Cells
  15. 1775
    “…Here we present a facile method to synthesize highly controlled, ligand-free GeTe nanoparticles, an important PCM, with an average diameter under 10 nm. …”
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    Resolving Crystallization Kinetics of GeTe Phase-Change Nanoparticles by Ultrafast Calorimetry
  16. 1776
    “…We then analyze the atomic structure of MoTe(2) encapsulated between two graphene sheets to mitigate damage, finding the as-prepared material to contain an unexpectedly large concentration of defects. …”
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    Atomic Structure of Intrinsic and Electron-Irradiation-Induced Defects in MoTe(2)
  17. 1777
    “…In the study, polycrystalline bulk BiTeBr with intensive texture was synthesized via spark plasma sintering (SPS). …”
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    Synthesis and thermoelectric properties of Rashba semiconductor BiTeBr with intensive texture
  18. 1778
    “…The magnetoresistance (MR) of PtTe(2) is large (over 3000% at T = 1.8 K in B = 9 T) and unsaturated in strong fields in the entire temperature range studied. …”
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    Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe(2)
  19. 1779
    “…Here, we demonstrate the improvement of sensing performance of molybdenum ditelluride (MoTe(2)) gas sensor through continuous light illumination. …”
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    Enhanced Sensitivity of MoTe(2) Chemical Sensor through Light Illumination
  20. 1780
    “…Indeed, they are designed to impart an angular kick to a 7 TeV/c proton beam with unprecedented high efficiency. …”
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    Bent crystals for efficient beam steering of multi TeV-particle beams
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