Mostrando 321 - 340 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.19s Limitar resultados
  1. 321
  2. 322
    por Shin, Hyunji, Kim, Dae Yu
    Publicado 2022
    “…The device is a triboelectric transistor with a simple structure and is manufactured using a simple process. …”
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  3. 323
    “…Software tools that are able to simulate the functionality or interactions of an enzyme biosensor with Metal Oxide Semiconductor (MOS), or any Field Effect Transistor (FET) as transducer, represent a gap in the market. …”
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  4. 324
    “…To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. …”
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  5. 325
    “…However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. …”
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  6. 326
  7. 327
    por Thriveni, Gokuraju, Ghosh, Kaustab
    Publicado 2022
    “…Field-effect transistors (FETs) have become eminent electronic devices for biosensing applications owing to their high sensitivity, faster response and availability of advanced fabrication techniques for their production. …”
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  8. 328
    “…Nanoscale vacuum channel transistors (NVCTs) are promising candidates in electronics due to their high frequency, fast response and high reliability, and have attracted considerable attention for structural design and optimization. …”
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  9. 329
    “…CMOS-like circuits in bioelectronics translate biological to electronic signals using organic electrochemical transistors (OECTs) based on organic mixed ionic-electronic conductors (OMIECs). …”
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  10. 330
    “…Graphene field-effect transistors (GFETs) exhibit unique switch and sensing features. …”
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  11. 331
    “…The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. …”
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  12. 332
    “…Here, we propose an anti-ferroelectric field-effect transistor neuron based on the inherent polarization and depolarization of Hf(0.2)Zr(0.8)O(2) anti-ferroelectric film to meet these challenges. …”
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  13. 333
  14. 334
  15. 335
    “…Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. …”
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  16. 336
    “…The synapse at top is a single thin‐film transistor (1TFT‐synapse) made of poly‐crystalline silicon film and the neuron at bottom is another single transistor (1T‐neuron) made of single‐crystalline silicon. …”
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  17. 337
    por Fighiera, Henri
    Publicado 1970
    Materias:
    Libro
  18. 338
    por Veatch, Henry C.
    Publicado 1981
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  19. 339
    por Faccio, F, Cervelli, G
    Publicado 2005
    “…While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).…”
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  20. 340
    por Gao, Jianjun
    Publicado 2010
    “…The following chapters address modeling techniques for field effect transistors and cover models such …”
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