“…Here, we demonstrate AFM tip-based cleaning applied to hBN-encapsulated monolayer MoS(2) transistors, which results in electrical performance improvements of the devices. …”
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“…In this work, we have proposed a concept for an epitaxial integration and then demonstrated a completely different method that allows us to achieve an epitaxial integration of a single μLED with a diameter of 20 μm and an AlGaN/GaN high-electron-mobility transistor (HEMT), where the emission from a single μLED is modulated by tuning the gate voltage of its HEMT. …”
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“…Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. …”
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“…It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. …”
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“…As a diagnostic device, this smart contact lens enables real-time measurement of the concentration of matrix metalloproteinase-9, a biomarker for OSI, in tears using a graphene field-effect transistor. As a therapeutic device, we also fabricated a stretchable and transparent heat patch attachable on the human eyelid conformably. …”
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“…One promising analog memory is the electrochemical random-access memory (ECRAM), also known as the redox transistor. Its low write currents and linear switching properties across hundreds of analog states enable accurate and massively parallel updates of a full crossbar array, which yield rapid and energy-efficient training. …”
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“…While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. …”
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“…We demonstrate in this work printed hardware building blocks such as inverter-based comprehensive weight representation and resistive crossbars as well as printed transistor-based activation functions. In addition, we present a learning algorithm developed to train the proposed printed NCS architecture based on specific requirements and constraints of the technology.…”
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“…Absorbed organ doses were measured using 11 metal oxide field effect transistor (MOSFET) dosimeters that were placed in a custom‐made anthropomorphic elbow RANDO phantom. …”
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“…Electronic components including the capacitor, inductor, diode, and transistor using the MgZnCa MG electrode support its integrability to transient electronic devices. …”
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“…We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. …”
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“…In this review, we will summarize the novel diagnostic tools that are currently available for coronavirus, including imaging examinations and laboratory medicine by next-generation sequencing (NGS), real-time reverse transcriptase–polymerase chain reaction (rRT-PCR) analysis, immunoassay for COVID-19, cytokine and T cell immunoassays, biochemistry and microbiology laboratory parameters in the blood of the patients with COVID-19, and a field-effect transistor-based biosensor of COVID-19. Specifically, we will discuss the effective detection rate and assay time for the rRT-PCR analysis of SARS-CoV-2 and the sensitivity and specificity of different antibody detection methods, such as colloidal gold and ELISA using specimen sources obtained from the respiratory tract, peripheral serum or plasma, and other bodily fluids. …”
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“…To date, experimental information on such junctions has been obtained mainly indirectly by evaluating transistor characteristics. The fact that the metal–semiconductor interface is typically embedded, further complicates the investigation of the underlying physical mechanisms at the interface. …”
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“…These pneumatic logic circuits use normally-closed microfluidic valves as transistor-like elements; this enables our circuits to support more complex computational functions than those built from normally-open valves. …”
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“…We then network the sensor with a large-scale Pt/Ta/HfO(2)/Ta one-transistor-one-resistor (1T1R) memristive crossbar, which plays a similar role to the visual cortex in the human brain. …”
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“…The optoelectronics, electrochemical, and thermal properties have been investigated. Organic thin film transistor (OTFT) devices prepared from TDPP-T and TDPP-EDOT have shown p-type mobility. …”
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“…The characterization of nanostructured surfaces with sensitivity in the sub-nm range is of high importance for the development of current and next-generation integrated electronic circuits. Modern transistor architectures for, e.g., FinFETs are realized by lithographic fabrication of complex, well-ordered nanostructures. …”
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“…Vision chips inspired by the LGMD have been successfully implemented in very-large-scale-integration (VLSI) system. However, transistor-based chips and single devices to simulate LGMD neurons make them bulky, energy-inefficient and complicated. …”
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“…The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. …”
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“…Based on the measurement results, Sm(2)O(3)/Al(2)O(3)/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.…”
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