“…By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. …”
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“…Furthermore, we discuss the working principles of various virus detection technologies based on emerging 2D materials, such as field-effect transistor-based virus detection, electrochemical virus detection, optical virus detection and other virus detection techniques. …”
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“…In this study, we demonstrate the growth of two distinct MoS(2) films that differ in grain size by means of chemical vapor deposition (CVD) and thermal vapor sulfurization (TVS) methods. Transistor-based sensors are fabricated using these films, and their NO(2) sensing properties are evaluated. …”
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“…This switch applies six stacks of series and shunt transistors as big as 3.9 mm/160 nm and 0.75 mm/160 nm, respectively. …”
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“…By simply applying a binary waveform with an arbitrary temporal pattern to the transistor gate, low-power and real-time switching control can be achieved. …”
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“…Here, we report ultralow-power mechanical memory operations utilizing the nonlinear oscillation regime of GaN microcantilevers with embedded piezotransistive AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers. …”
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“…F1 and F3 with a thiophene bridge present an obvious p-type characteristic, while for F3 with an outward imide orientation, the maximum hole mobility from a solution-processed field-effect transistor (FET) device reaches 0.026 cm(2) V(−1) s(−1), being ∼10(4) times higher than the value of F1 with an inward imide orientation. …”
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“…Herein, we demonstrate a robust on-chip graphene field-effect transistor (GFET) biosensing method for sensitive and ultrafast detection of GFAP in patient plasma. …”
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“…Up to now, the spectrum of h-BN-based devices has broadened significantly, and systems containing the h-BN/III-V junctions have gained substantial interest as building blocks in, inter alia, light emitters, photodetectors, or transistor structures. Therefore, the understanding of electronic phenomena at the h-BN/III-V interfaces becomes a question of high importance regarding device engineering. …”
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“…Moore’s law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching a physical barrier for scaling down the transistor’s size lower than 5 nm. …”
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“…Enabling techniques for high aspect ratio pattern transfer at the single nanometer scale could be of high interest, e.g., in the high-end transistor industry.…”
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“…Although the versality of the findings is not fully studied yet, the results provide insights into designing highly sensitive CRP sensors, especially field-effect transistor-based sensors.…”
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“…The detailed analysis of the inter­molecular inter­actions ob­served in the crystal structure of 1 highlights its potential towards the imple­mentation of this core as a semiconductor in organic thin-film transistor (OTFT) devices. Since the mol­ecule has a flat con­fig­uration reflecting its π-conjugated system, neighbouring mol­ecules are found to stack atop each other in a slipped parallel fashion via π–π stacking inter­actions between planes of ca 3.30 Å, with a centroid–centroid distance between the aromatic rings corresponding to the shortest axis of the unit cell (i.e. c). …”
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“…The mode-localized electric current sensor provides a new approach for measuring sub-microampere currents for applications in nuclear physics, including for photocurrent signals and transistor leakage currents. It could also become a key component of a portable mode-localized multimeter when combined with a mode-localized voltmeter. …”
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“…In this paper, we propose an efficient hardware encryption technique with minimal complexity and overheads based on ferroelectric field-effect transistor (FeFET) active interconnects. By utilizing the threshold voltage programmability of the FeFETs, run-time reconfigurable inverter-buffer logic, utilizing two FeFETs and an inverter, is enabled. …”
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“…In this paper, we propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor (HEMT), where ethanolamine (EA) was utilized to functionalize the surface of GaN and provided amphoteric amine groups for probe molecular immobilization for bioassay application. …”
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“…This work reports an emerging structure of gate-all-around ferroelectric area tunneling field-effect transistor (FATFET) by considering ferroelectric and a n-epitaxial layer enveloped around the overlapped region of the source and channel to succeed with complete area of tunneling probability. …”
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“…The proposed eDRAM cell consists of a two-transistor (2T) gain cell with a pseudo-static leakage compensation that maintains stored data without charge loss issue. …”
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“…The light-sensing function with analog MoS(2) transistor circuits offers low noise and high photosensitivity. …”
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“…On this basis, a large-scale flexible organic field-effect transistor (OFET) device array is fabricated and realizes high-resolution UV imaging with reversible light response.…”
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