Mostrando 3,441 - 3,460 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.72s Limitar resultados
  1. 3441
    por Seçkiner, Soner, Köse, Selçuk
    Publicado 2022
    “…Recently, the security impact of noise coupling among multiple masking shares has been demonstrated both in practical FPGA implementations and with extensive transistor level simulations. Due to the highly sophisticated interactions in modern VLSI circuits, the interactions among multiple masking shares are quite challenging to model and thus information leakage from one share to another through noise coupling is difficult to mitigate. …”
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  2. 3442
    “…Graphene is even considered a potential substitute for the post-Si electronics era, where a high-performance graphene-based field-effect transistor (GFET) can be fabricated to detect the lethal SARS-CoV-2. …”
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  3. 3443
    “…In this paper, a dynamic adaptive display model based on thin film transistor-electrowetting display (TFT-EWD) was proposed. …”
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  4. 3444
    por Sin, Stanislav, Oh, Saeroonter
    Publicado 2022
    “…It is also shown, that the area of the access transistor can be reduced by approximately 10%, while maintaining the same energy-delay product and reducing gate RC delay.…”
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  5. 3445
  6. 3446
  7. 3447
    “…The highest electron mobility of organic field-effect transistor (OFET) based on Flu-TCNQ is 0.32 cm(2) V(−1) s(−1). …”
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  8. 3448
    “…Furthermore, a few layered HfS(2) back gate field-effect transistor (FET) is fabricated based on directly grown HfS(2) on SiO(2)/Si, and the device exhibits p-type behaviour. …”
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  9. 3449
    “…Hence, the facilitated charge injection resulted in ambipolar transistor performances with the optimized hole and electron mobilities of 0.00134 and 0.151 cm(2) V(−1) s(−1), respectively. …”
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  10. 3450
    “…This paper aims to bring a trade-off between these parameters, with security being the main key factor, and ensure the design metrics by proposing a novel transistor-level method of logic encryption for CMOS gates. …”
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  11. 3451
    “…Here, we report on sub-µm-sized artificial synaptic weights exploiting a combination of a ferroelectric space charge effect and oxidation state modulation in the oxide channel of a ferroelectric field effect transistor. They lead to a quasi-continuous resistance tuning of the synapse by a factor of [Formula: see text] and a fine-grained weight update of more than [Formula: see text] resistance values. …”
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  12. 3452
    “…At the same time, monolayer‐based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10(−3) A W(−1) and remarkable stability upon prolonged operation in ambient conditions. …”
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  13. 3453
    “…[Image: see text] Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. …”
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  14. 3454
    Publicado 1997
    Tabla de Contenidos: “…Minority carriers and the first two transistors / Michael Riordan and Lillian Hoddeson -- From germanium to silicon : a history of change in the technology of the semiconductor / Philip Seidenberg -- Complementarity, cooperation, and collective innovation : materials research in the semiconductor industry / Daniel Holbrook -- Jack Avins : the essence of engineering / Andrew Goldstein -- The social construction of the microprocessor : a Japanese and American story / William Aspray -- A review of U.K. government involvement in the field of semiconductor technology within the research establishments / P.R. …”
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  15. 3455
    “…This paper shows that high-frequency bipolar transistor readout of state-of-the-art SiPMs coupled to high-performance scintillators can substantially improve the best achievable coincidence time resolution (CTR) in TOF-PET. …”
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  16. 3456
    “…Using a HF bipolar transistor readout, a similar trend was observed, with a minimum CTR of 116 ± 5 ps for the single array and the 6x6x3 mm$^{3}$crystal. …”
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  17. 3457
    “…In the analysis of the Class-E inverter, the voltage-dependent non-linearities of C(ds), C(gd), and R(ON) as well as temperature-dependent non-linearity of R(ON) of the transistor are considered simultaneously. Close agreement of theoretical, simulated and experimental results confirmed the validity of the proposed approach in taking into account these nonlinear effects. …”
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  18. 3458
    “…Graphene field effect transistor (FET) biosensors have attracted huge attention in the point-of-care and accurate detection. …”
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  19. 3459
    “…Such permanent faults may come from manufacturing defects during the fabrication process, and/or from device/transistor damages (e.g., due to wear out) during the run-time operation. …”
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  20. 3460
    “…We have demonstrated stretchable transistor arrays and active-matrix circuits with moduli below 10 kPa—over two orders of magnitude lower than the current state of the art. …”
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