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  1. 3521
    por Modarres, Paresa, Tabrizian, Maryam
    Publicado 2020
    “…Analogous to field-effect transistor devices, the principle of operation for the proposed micromixer is governed by the source-gate and source-drain voltage potentials that are modulated by introducing a phase lag between the driving electrodes. …”
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    Phase-controlled field-effect micromixing using AC electroosmosis
  2. 3522
    “…As the first step to remove this discrepancy, in this study, we report on the fabrication of a nanoscale MC receiver based on graphene field-effect transistor biosensors. We perform its ICT characterisation in a custom-designed microfluidic MC system with the information encoded into the concentration of single-stranded DNA molecules. …”
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    Fabrication and microfluidic analysis of graphene-based molecular communication receiver for Internet of Nano Things (IoNT)
  3. 3523
    “…[Formula: see text] is a layered transition-metal dichalcogenide (TMD) with outstanding electronic and optical properties, which is widely used in field-effect transistor (FET). Here the structural evolution and phase transition of [Formula: see text] under high pressure are systematically studied by CALYPSO structural search method and first-principles calculations. …”
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    Structural evolution and phase transition mechanism of [Formula: see text] under high pressure
  4. 3524
    “…However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. …”
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    Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
  5. 3525
    “…Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading “1” and “0”, respectively. …”
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    All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing
  6. 3526
    “…In this regard, we demonstrate the PEDOT thin film’s superior biocompatibility as scaffolds for cellular growth, opening immediate applications in organic electrochemical transistor (OECT) devices for monitoring cell behavior over extended time periods, bioscaffolds, and medical devices, without needing physiologically unstable and poorly biocompatible PSS.…”
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    Electrosynthesis of Biocompatible Free-Standing PEDOT Thin Films at a Polarized Liquid|Liquid Interface
  7. 3527
    “…The chemisorption on the (101̅0) m-plane of GaN, which is the channel of a trench-type GaN MOS power transistor, was dominant, and a stable Ga-O bond was formed due to the elongated bond length of Ga on the surface. …”
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    High reactivity of H(2)O vapor on GaN surfaces
  8. 3528
    “…Within the different detection platforms studied, the field effect transistor (FET) is a promising device due to its high sensitivity and fast detection capabilities. …”
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    Electronic field effect detection of SARS-CoV-2 N-protein before the onset of symptoms
  9. 3529
    “…This research's main objectives are to determine the R(opt) of the transistor and design a proper Output Matching Network (OMN) for obtaining Class-J PA operation to make it suitable for 5G wireless applications. …”
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    A low power, highly efficient, linear, enhanced wideband Class-J mode power amplifier for 5G applications
  10. 3530
    “…In this study, we proposed a Si nanowire field-effect transistor (Si-NW Bio-FET) device chemically modified with specific antibodies for the electrical and label-free detection of exosomes. …”
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    Si nanowire Bio-FET for electrical and label-free detection of cancer cell-derived exosomes
  11. 3531
    “…Here, we show a memristor 1R cross-bar array without transistor devices for individual memristor access with low variation, 100% yield, large dynamic range, and fast speed for artificial neuron and neuromorphic computing. …”
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    Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing
  12. 3532
    “…Furthermore, an n-type doping (n ≈ 0.5 × 10(13) cm(–2)) was deduced by Raman mapping and confirmed by electrical measurements of an Al(2)O(3)/Si back-gated 1L MoS(2) transistor. These results provide a deeper understanding of the Au-assisted exfoliation mechanism and can contribute to its widespread application for the realization of novel devices and artificial vdW heterostructures.…”
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    Strain, Doping, and Electronic Transport of Large Area Monolayer MoS(2) Exfoliated on Gold and Transferred to an Insulating Substrate
  13. 3533
    “…Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm(2)/Vs (~800 cm(2)/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. …”
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    Low-defect-density WS(2) by hydroxide vapor phase deposition
  14. 3534
    “…The triboelectric potential generated by the external contact electrification is used as the ion-gel-gate voltage of the organic thin film transistor, which can tune the carriers transport through the migration/accumulation of ions. …”
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    A Flexible Tribotronic Artificial Synapse with Bioinspired Neurosensory Behavior
  15. 3535
    “…Then, this review summarizes the wafer-scale application of MoS(2) in a transistor, inverter, electronics, and photodetectors. …”
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    Emerging MoS(2) Wafer-Scale Technique for Integrated Circuits
  16. 3536
    “…Organic field-effect transistor (OFET) gas sensors based on conjugated polymer films have recently attracted considerable attention for use in environmental monitoring applications. …”
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    Enhanced Nitric Oxide Sensing Performance of Conjugated Polymer Films through Incorporation of Graphitic Carbon Nitride
  17. 3537
    “…We consider a device in the form of a single electron transistor coupled to the simplest kind of topological insulators, namely chains of atoms with hybridized sp orbitals. …”
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    Thermoelectric properties of topological chains coupled to a quantum dot
  18. 3538
    “…Relying on a bottle-brush-shaped semiconducting p-NDI with efficient exciton-dissociations and through-space charge-transport characteristics, a wearable transistor-based dynamic in-sensor Reservoir-Computing system manifesting excellent separability, fading memory, and echo state property on different tasks is developed. …”
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    Wearable in-sensor reservoir computing using optoelectronic polymers with through-space charge-transport characteristics for multi-task learning
  19. 3539
    “…Defects to popular two-dimensional (2D) transition metal dichalcogenides (TMDs) seriously lower the efficiency of field-effect transistor (FET) and depress the development of 2D materials. …”
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    Deep learning based atomic defect detection framework for two-dimensional materials
  20. 3540
    “…By carefully optimizing the gas velocity, temperature, and height of substrate away from the tube bottom, a large-scale continues monolayered WS(2) film was achieved. Field-effect transistor based on the as-grown monolayer WS(2) showed a mobility of 3.76 cm(2)V(−1) s(−1) and ON/OFF ratio of 10(6). …”
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    CVD growth of large-area monolayer WS(2) film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor
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