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  1. 3541
    “…We developed an electrochemical transistor comprising an n-type conjugated polymer film in contact with a catalytic enzyme for sensitive and selective glucose detection in bodily fluids. …”
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  2. 3542
    “…We investigate the impact of OSS on the gas sensing performances, including response, low-frequency noise, and signal-to-noise ratio of horizontal floating-gate field-effect-transistor (FET)-type gas sensors. The 1/f noise is increased after the OSS is applied to the sensor because the gate oxide is damaged by hot holes. …”
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  3. 3543
    “…This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. …”
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  4. 3544
    Publicado 1961
    Tabla de Contenidos: “…Radio, tubos electrónicos, electrónica, tubos fotoeléctricos, rayos x, semiconductores y transistores.…”
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  5. 3545
    por Zito, Marco
    Publicado 2015
    “…Les rayons X et leurs applications médicales, la supraconductivité, le transistor, Internet sont nés dans les laboratoires de physique. …”
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  6. 3546
    por Karacson, Matthias
    Publicado 2017
    “…Active radiation monitors, consisting of small printed-circuit-boards with multiple radiation sensitive field-effect-transistor and diode sensors have been installed close to passive sensor positions to allow for the monitoring of both peak and long term radiation levels. …”
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  7. 3547
    “…The optical sensors included fluorescence (FL), surface plasmon resonance (SPR), colorimetric, and surface-enhanced Raman scattering (SERS), while electrical sensors included electrochemical luminescence (ECL), microfluidic chip, and field-effect transistor (FET). A synopsis of sensing materials, mechanisms, detection limits, and ranges has been provided. …”
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  8. 3548
    “…The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. …”
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  9. 3549
    “…The first unit consists of a floating-gate field-effect transistor (FG-FET), which is used to monitor changes in pH in the sensing area. …”
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  10. 3550
    “…In the proposed hybrid detector design, the central scintillator and thin-film transistor elements in the FPD are replaced with a semiconductor PCD module to upgrade the imaging capabilities of the C-arm system while preserving the full FOV coverage. …”
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  11. 3551
    “…As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. …”
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  12. 3552
    “…In this study, we report on the development of a compact and low-power neurotransistor based on a vertical dual-gate electrolyte-gated transistor (EGT) with short-term memory characteristics, a 30 nm channel length, a record-low read power of ~3.16 fW and a biology-comparable read energy of ~30 fJ. …”
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  13. 3553
    “…Therefore, besides showing photocatalytic effects, Co-doped ZnS QDs act as ideal dilute magnetic semiconductors (DMSs) and will undoubtedly become excellent candidates for the microelectronics industry because of their special ability to exhibit spin-dependent magneto-electro-optical properties that find use in spin-polarized light-emitting diodes, solid-state lasers, and spin-transistor devices.…”
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  14. 3554
    “…While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. …”
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  15. 3555
    “…When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. …”
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  16. 3556
    “…Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. …”
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  17. 3557
    “…[Image: see text] HfSe(2) is a very good candidate for a transition metal dichalcogenide-based field-effect transistor owing to its moderate band gap of about 1 eV and its high-κ dielectric native oxide. …”
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  18. 3558
    “…PURPOSE: This study was performed using end-to-end testing and real-time in vivo skin dose measurements, using metal oxide semiconductor field effect transistor (MOSFET) dosimeters on our first chronic psoriasis patient treated with iridium-192 ((192)Ir) high-dose-rate (HDR) brachytherapy (BT). …”
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  19. 3559
    “…Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130-nm CMOS process, in a two-transistor, two-resistor cell, which allows the exclusive NOR operations of the neural network to be performed directly within the sense amplifiers. …”
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  20. 3560
    “…Furthermore, when cable bacterium filaments are utilized as the channel in a field-effect transistor, they show n-type transport suggesting that electrons are the charge carriers. …”
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