“…Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. …”
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“…The most popular PUF architectures are transistor-based and they focus on exploiting the uncontrollable process variations in conventional CMOS fabrication technology. …”
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“…We demonstrated the performance of an Al(2)O(3)/SiO(2) stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. …”
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“…BACKGROUND: The TFT-LCD (thin film transistor liquid crystal display) industry is rapidly growing in Taiwan and many other countries. …”
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“…Local dose deposition was measured using thermoluminescent dosimeters (TLD), metal oxide semiconductor field‐effect transistor dosimeters (MOSFET), and GafChromic™ films. …”
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“…Here, we report the discovery of a coupled system in mitochondria whose working principle corresponds to that of field-effect transistor (FET). The functional interplay of cytochrome c (emitter) and COX (drain) with a nanoscopic interfacial water layer (gate) between the two enzymes forms a biological FET in which the gate is controlled by R-NIR photons. …”
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“…We validated the impact of the optimized PMMA solution on the mass fabrication of arrays of electrolyte-gated graphene field-effect transistors operating as biosensors. On average, the transistor channel resistance decreased from 1860 to 690 Ω when using the optimized PMMA. …”
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“…Gallium nitride high electron mobility transistor (GaN HEMT) devices have become critical components in the manufacturing of high-performance radio frequency (RF) or power electronic modules due to their superior characteristics, such as high electron saturation speeds and high power densities. …”
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“…Here, we developed a new thin-film transistor (TFT) image sensor for measuring transmitted light and calculating optical density (OD) to observe bacterial growth on agar plates. …”
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“…We leverage large-area fabrication techniques commonly employed by the thin-film transistor (TFT) display industry. Conventional ITO-on-glass substrates are used with a patterned film of Cr/Au/Cr that serves as a self-aligned lithography mask for backside exposure. …”
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“…Tunnel Field Effect Transistor (TFET) technology came into existence because of the inability of CMOS (Complementary Metal Oxide Semiconductor) to produce reduced leakage current (I(off)) in the subthreshold regime. …”
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“…Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. …”
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“…For this purpose, a promising tool is the LaGEMPix detector&nbsp;that&nbsp;combines&nbsp;</span></span><span><span style="color:#1f497d">a</span></span><span><span style="color:black">&nbsp;triple GEM (Gas Electron Multiplier) with a matrix of organic photodiodes coated on an oxide thin film transistor (TFT) backplane. A first prototype of the LaGEMPix with an active area of 60 x 80 mm2 and pixels of 126 x 126 μm2 has been successfully built and tested&nbsp;with X-rays&nbsp;as a p</span></span><span style="color:black">reliminary step towards the development of a 20 x 20 cm2 detector.…”
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“…One after the other, both predictions have come to a halt due to the increased complexity in transistor manufacturing, the power and thermal limitations at extremely small-scale technology nodes, and the implications of Amdahl's law to multiprocessing . …”
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“…A first prototype uses MOS transistors, resulting an even more promising and challenging configuration than that obtained via bipolar transistors. …”
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“…The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. …”
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“…We found that the device characteristics of the back-gated WSe(2) transistors with thick oxides are very sensitive to the applied drain bias, especially for transistors in the sub-micrometer regime. …”
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“…The behavior of transistors in commercial-grade complementary metal-oxide semiconductor technologies in the 65 and 130 nm nodes has been explored up to a total ionizing dose of 1 Grad. …”
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“…Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. …”
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“…TID induces threshold voltage shifts and, in n-channel transistors, source-drain leakage currents. Wide variability in the magnitude of these effects is observed. …”
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