Mostrando 3,621 - 3,640 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.21s Limitar resultados
  1. 3621
    “…Sub-microwires based organic field effect transistors showed high mobility with an average of 1.9 cm(2) V(−1) s(−1), approximately 5 times higher than that of thin film based organic field effect transistors. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  2. 3622
    “…Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.…”
    Enlace del recurso
    Enlace del recurso
  3. 3623
    “…Hybrid materials made from all inorganic components are intriguing in many fields, because they have shown in-depth potential use for electronic and optoelectronic applications including solar cells, gas sensors, photodetectors, and field effect transistors. Hybrid materials made from SnO(2) nanoparticles on SnSe nanosheets have been synthesized via a facile, lost-cost and safe solution method, and have been demonstrated as promising multifunctional materials in various prototype devices, including gas sensors, photodetectors, and field effect transistors.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  4. 3624
    “…We report a novel concept of graphene transistors on Scotch tape for use in ubiquitous electronic systems. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  5. 3625
    “…Then, the research progress of TENGs as tactile stimulators for artificial synapses is emphatically introduced, which is mainly reflected in the electrolyte-gate synaptic transistors, optoelectronic synaptic transistors, floating-gate synaptic transistors, reduced graphene oxides-based artificial synapse, and integrated circuit-based artificial synapse and nervous systems. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  6. 3626
    “…Laser probing remains invaluable to the semiconductor industry for isolating and diagnosing defects in silicon transistors in integrated circuits during electrical stress tests. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  7. 3627
    “…This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. …”
    Enlace del recurso
    Enlace del recurso
  8. 3628
    “…We describe an approach to substituting a fluorescence microarray with a surface made of an arrangement of electrolyte-gated field effect transistors. This was achieved using a dedicated blocking of non-specific interactions and comparing threshold voltage shifts of transistors exhibiting probe molecules of different base sequence. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  9. 3629
  10. 3630
    “…Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or depletion layers in pn diodes, the role of dopants becomes critical, since the transport properties depend on a small number of dopants and/or on their random distribution. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  11. 3631
    “…The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) to be an excellent replacement of existing Silicon Insulated Gate Bipolar Transistors (IGBTs) technology. …”
    Enlace del recurso
    Enlace del recurso
  12. 3632
    “…This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  13. 3633
    “…We evaluate transistors produced with Parylene C as a dielectric, substrate, and encapsulation layer, either semitransparent or fully transparent. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  14. 3634
  15. 3635
  16. 3636
    Publicado 2006
    “…It has 1,7 billion transistors and 24 MB on die-cache.…”
    Enlace del recurso
  17. 3637
    “…Carbon nanotube field-effect transistors (CNFETs) are efficient in designing a high performance circuit. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  18. 3638
    “…Therefore, our results pave the way towards applications based on graphene transistors in future electronic devices.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  19. 3639
    “…Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
  20. 3640
    “…Graphene is an excellent 2D material for vertical organic transistors electrodes due to its weak electrostatic screening and field-tunable work function, in addition to its high conductivity, flexibility and optical transparency. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
Herramientas de búsqueda: RSS