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  1. 3661
    “…The wrinkling instability is used to apply local strains of different magnitudes along the conducting channel in field-effect transistors. We discover that the mobility changes as dictated by the net strain at the dielectric/semiconductor interface. …”
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    Rubrene crystal field-effect mobility modulation via conducting channel wrinkling
  2. 3662
    por Cai, Le, Wang, Chuan
    Publicado 2015
    “…Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. …”
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    Carbon Nanotube Flexible and Stretchable Electronics
  3. 3663
    “…[Image: see text] Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of “on”-state conductance or multivalued logic gates. …”
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    Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures
  4. 3664
    “…To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe(2)) but a high growth temperature is required. …”
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    Selective Growth of WSe(2) with Graphene Contacts
  5. 3665
    “…As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. …”
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    Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
  6. 3666
    “…The circuit amplifies small ionic signals into ionic outputs, and its operation mimics the electronic Darlington amplifier composed of transistors. The individual transistors are pores equipped with three terminals including a gate that is able to enrich or deplete ions in the pore. …”
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    Ionic amplifying circuits inspired by electronics and biology
  7. 3667
    “…For example, these novel applications include osmotic power harvesting using the charged inner surfaces of BNNTs, room-temperature single-electron transistors using insulating BNNTs as the tunneling channels, high-brightness fluorophores that can be 1000-times brighter than regular dyes, and transistors based on Tellurium atomic chains filled inside BNNTs. …”
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    Emerging Applications of Boron Nitride Nanotubes in Energy Harvesting, Electronics, and Biomedicine
  8. 3668
    “…Initially, high performance bottom contact organic thin-film transistors (OTFTs) were fabricated using tetracene to validate the fabrication process. …”
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    Benzohexacene guide in accurate determination of field effect carrier mobilities in long acenes
  9. 3669
    “…Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in traditional field-effect transistors (FETs), revealing it to be a promising technique for exploring the electronic phases of materials in extreme doping regimes. …”
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    Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities
  10. 3670
    “…In contrast to conventional electrophysiological sensing using electrodes, the pressure-sensitive transistors measured mechanophysiological characteristics by monitoring the spatiotemporal distributions of cardiac pressures during heart beating motions. …”
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    In situ diagnosis and simultaneous treatment of cardiac diseases using a single-device platform
  11. 3671
    por Kollár, Martin
    Publicado 2005
    “…In this paper, a preprocessing circuit for ISFETs (Ion-sensitive field-effect transistors) to measure hydrogen-ion concentration in electrolyte is presented. …”
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    Switched Flip-Flop based Preprocessing Circuit for ISFETs
  12. 3672
    por Grabowski B.
    Publicado 1970
    Libro
    Ejercicios y problemas resueltos sobre circuitos transistorizados
  13. 3673
    Publicado 1966
    “…Laboratory manual 1966 format A3 with the list of equipment cables, electronic tubes, chassis, diodes transistors etc. One of CERN's first material catalogue for construction components for mechanical and electronic chassis.…”
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    Laboratory Handbook Electronics
  14. 3674
    “…Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.…”
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    MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons
  15. 3675
    “…Here we show that electrical tuning of the sensitivity of chemitransistor sensors, namely field-effect-transistors (FETs) exploiting nano/mesostructured sensing materials, can be used to effectively address two chief problems of state-of-the-art gas sensors, specifically fabrication reliability and degradation by aging. …”
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    Addressing Reliability and Degradation of Chemitransistor Sensors by Electrical Tuning of the Sensitivity
  16. 3676
    “…This study shows that Au NPs impose remarkable p-doping effects to the MoS(2) transistors without degrading their electrical characteristics.…”
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    Selective Decoration of Au Nanoparticles on Monolayer MoS(2) Single Crystals
  17. 3677
    “…Silicon dioxide (SiO(2)) is one of the key materials in many modern technological applications such as in metal oxide semiconductor transistors, photovoltaic solar cells, pollution removal, and biomedicine. …”
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    Grassy Silica Nanoribbons and Strong Blue Luminescence
  18. 3678
    “…Despite great progress, reliable and reproducible fabrication of single-ribbon field-effect transistors (FETs) is still a challenge, impeding the understanding of the charge transport. …”
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    Charge transport mechanism in networks of armchair graphene nanoribbons
  19. 3679
    “…Here, we report the scalable manufacturing of high-performance stretchable semiconducting nanofilms and the development of fully rubbery transistors, integrated electronics, and functional devices. …”
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    Air/water interfacial assembled rubbery semiconducting nanofilm for fully rubbery integrated electronics
  20. 3680
    “…Specifically, utilizing the same spin-coated layer of CuInSe(2) quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.…”
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    Solution-processable integrated CMOS circuits based on colloidal CuInSe(2) quantum dots
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