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  1. 3681
    “…By tuning the bias voltage applied to the gates of these transistors, the thermal state and the spontaneous polarization of the active layer can be controlled at kHz frequencies. …”
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    Graphene-based autonomous pyroelectric system for near-field energy conversion
  2. 3682
    “…Interestingly, the observation of field effect at room temperature in transistors based on solution-processed, polycrystalline, three-dimensional perovskite thin films has been elusive. …”
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    Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films
  3. 3683
    “…We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.…”
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    Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance
  4. 3684
    por KIMOTO, Tsunenobu
    Publicado 2022
    “…Next, recent progress in SiC metal-oxide-semiconductor field effect transistors, which are the most important unipolar devices, is described with an emphasis on the improvement of channel mobility at the SiO(2)/SiC interface. …”
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    High-voltage SiC power devices for improved energy efficiency
  5. 3685
    “…We have successfully implemented both ASICs in 0.25 mm CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. …”
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    Radiation-Hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector
  6. 3686
    Publicado 2017
    “…Each module contained 8 circuit cards for a total of about 300-500 uncovered transistors packaged with face plates so the Freon plates wouldn't touch the circuits. …”
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    CDC 7600 module slice
  7. 3687
    “…Based on these requirements, a high-frequency semiconductor integrated switch with NMOS transistors was designed. With these transistors, it is possible to achieve higher integration than with bipolar ones. …”
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    Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications
  8. 3688
    “…In the second method, we utilize thick-oxide MOS transistors in the input differential pair of the OTA. …”
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    Low-Cutoff Frequency Reduction in Neural Amplifiers: Analysis and Implementation in CMOS 65 nm
  9. 3689
    “…The CMOS transistors provide outstanding control over the currents across the hexagonal boron nitride memristors, which allows us to achieve endurances of roughly 5 million cycles in memristors as small as 0.053 µm(2). …”
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    Hybrid 2D–CMOS microchips for memristive applications
  10. 3690
    “…The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. …”
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    LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr
  11. 3691
    “…The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. …”
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    LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter
  12. 3692
    por Mekhiel, Nagi
    Publicado 2019
    “…The complexity of implementing 20 Q-bit in our system requires only 500 transistors to map 10 bits in time, and 10 bits in space. …”
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    Simple Implementation of Quantum Bits in Silicon by Decoupling them in Space and Time
  13. 3693
    “…A single chip solution for ultra-low current measurement is designed by combining the current processing analog section realized using low leakage thick gate transistors and the data handling digital section implemented using fast thin gate transistors. …”
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    An Ultra Low Current Measurement Mixed-Signal ASIC for Radiation Monitoring Using Ionisation Chambers
  14. 3694
    “…In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. …”
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    Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices
  15. 3695
    por Wang, Xiao, Shen, Zhihua, Li, Jie, Wu, Shengli
    Publicado 2021
    “…IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors’ (TFTs) use in commercial products. …”
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    Preparation and Properties of Crystalline IGZO Thin Films
  16. 3696
    “…Next, we studied the TID effect on an inverter circuit composed of these two MOS transistors. The simulation results show that when the radiation dose was 400 krad (Si), the logic threshold drift of the inverter was approximately 0.052 V. …”
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    Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit
  17. 3697
    “…Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. …”
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    AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
  18. 3698
    “…Cyanated pentacenes are very promising candidate materials for ambipolar and n-type transistors. However, only a few examples have been obtained to date – all requiring lengthy, multi-step processes. …”
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    Dicyano- and tetracyanopentacene: foundation of an intriguing new class of easy-to-synthesize organic semiconductors
  19. 3699
    “…The time response of the proposed system was performed with both choppers, and results showed that voltage drop on cascade chopper transistors was reduced to half in comparison with voltage drop on conventional four-quadrant chopper transistors. …”
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    Time response enhancement for variable speed drive systems by using five-level cascade four quadrant chopper in dc-link
  20. 3700
    “…We explore the efficacy of this approach for soft robots designed to leverage novel 3D fluidic circuit elements—e.g., fluidic diodes, “normally closed” transistors, and “normally open” transistors with geometrically tunable pressure-gain functionalities—to operate in response to fluidic analogs of conventional electronic signals, including constant-flow [“direct current (DC)”], “alternating current (AC)”–inspired, and preprogrammed aperiodic (“variable current”) input conditions. …”
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    Fully 3D-printed soft robots with integrated fluidic circuitry
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