“…In biosensing applications, the exploitation of organic transistors gated via a liquid electrolyte has increased in the last years thanks to their enormous advantages in terms of sensitivity, low cost and power consumption. …”
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“…Thus, it was possible to implement those transistors into simple circuits such as inverters, reaching a clear discrimination between logic states. …”
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“…Potential applications in the field of organic electronic materials such as light emitting diodes, organic solar cells and organic field effect transistors are discussed.…”
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“…The on-line measurement of the Total Ionizing Dose (TID) is done with radiation sensitive MOS transistors (RADFETs). Displacement damage in silicon is monitored with diodes. …”
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“…The chip occupies 10 mm/sup 2/, and contains about 50000 transistors. Electronic noise (~220 e rms) and threshold dispersion (~160 e rms) allow operation at 1500 e average threshold. …”
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“…This particular technology provides a double well structure, which shields the thin gate oxide transistors from the Buried Oxide (BOX). In addition, the distance between transistors and BOX is one order of magnitude bigger than conventional SOI technologies, making the technology promising against its main limitations, as radiation hardness or back gate effects. …”
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“…In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors. …”
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“…This review focuses on several optical sensing-based junction temperature measuring techniques used for power-switching devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). …”
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“…This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. …”
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“…Graphene-based field effect transistors were used as switches in the true-time delay line of the phased array antenna. …”
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“…Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. …”
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“…In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. …”
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“…Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. …”
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“…Quantum capacitance as one of the important properties of field effect transistors (FETs) is in our focus. The quantum capacitance of electrolyte-gated transistors (EGFETs) along with a relevant equivalent circuit is suggested in terms of Fermi velocity, carrier density, and fundamental physical quantities. …”
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“…To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. …”
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“…For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. …”
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“…Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. …”
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“…Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. …”
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“…KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. …”
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“…Here, we systematically investigate the synthesis of high quality bilayer MoS(2) by chemical vapor deposition on molten glass with increasing domain sizes up to 200 μm. High performance transistors with optimized high-κ dielectrics deliver ON-current of 427 μA μm(−1) at 300 K and a record high ON-current of 1.52 mA μm(−1) at 4.3 K. …”
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