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  1. 3741
    “…The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. …”
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    Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
  2. 3742
    “…These advantages are especially apparent with electrical sensors such as electrochemical sensors or those using field-effect transistors. [Figure: see text]…”
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    Aptamers as molecular recognition elements for electrical nanobiosensors
  3. 3743
    “…It will also present the plans for MALTA2, which will be produced in late 2020, with enlarged transistors to reduce noise and cascoded front-end corrected slow control to improve chip operation.…”
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    Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes
  4. 3744
    “…Calculations predict these species to act as n‐type semiconductors, which was verified for two derivates through characterization in organic field‐effect transistors.…”
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    Substituted Cyclopentannulated Tetraazapentacenes
  5. 3745
    “…In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. …”
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    Optimization of Urea-EnFET Based on Ta(2)O(5) Layer with Post Annealing
  6. 3746
    “…Here, we demonstrate principal functionalities for on-chip optical communications via reconfigurable exciton-plasmon interconversions in ∼200-nm-diameter Ag-nanowires overlapping onto TMD transistors. By varying device configurations for each operation purpose, three active components for optical communications are realized: field-effect exciton transistors with a channel length of ∼32 μm, field-effect exciton multiplexers transmitting multiple signals through a single NW and electrical detectors of propagating plasmons with a high On/Off ratio of∼190. …”
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    Reconfigurable exciton-plasmon interconversion for nanophotonic circuits
  7. 3747
    “…Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. …”
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    Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics
  8. 3748
    “…Here, we demonstrate ambipolar, light-emitting field-effect transistors based on networks of pristine and functionalized polymer-sorted (6,5) SWCNTs. …”
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    Charge Transport in and Electroluminescence from sp(3)-Functionalized Carbon Nanotube Networks
  9. 3749
    “…The following section presents recent advances in state‐of‐the‐art CuI‐based devices, including transparent electrodes, thermoelectric devices, p–n diodes, p‐channel transistors, light emitting diodes, and solar cells. …”
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    Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors
  10. 3750
    “…The two TIPS‐ethynyldiazaacenoacenes were processed into organic thin‐film transistors with saturation hole mobilities reaching 2.9×10(−2) cm(2)(Vs)(−1).…”
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    N‐Acenoacenes: Synthesis and Solid‐State Properties
  11. 3751
    “…Areas that have already been commercially developed or which are under intensive development include organic light emitting diodes (for flat panel displays and solid state lighting), organic photovoltaic cells, organic thin film transistors (for smart tags and flat panel displays) and sensors. …”
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    Liquid Crystalline Semiconductors: Materials, properties and applications
  12. 3752
    “…Our calculation results can provide a reference for the design and fabrication of In(2)Se(3)-based field effect transistors.…”
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    First-principles study on electronic states of In(2)Se(3)/Au heterostructure controlled by strain engineering
  13. 3753
    por Nesheva, Diana
    Publicado 2023
    “…[Image: see text] Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. …”
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    Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides
  14. 3754
    “…Tungsten disulfide (WS(2)) is promising for potential applications in transistors and gas sensors due to its high mobility and high adsorption of gas molecules onto edge sites. …”
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    Modulated wafer-scale WS(2) films based on atomic-layer-deposition for various device applications
  15. 3755
    por Indrajit, IK, Alam, A
    Publicado 2010
    “…A Pentium(®) 4 CPU has transistors that execute a billion instructions per second. …”
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    Computer hardware for radiologists: Part I
  16. 3756
    “…In contrast, a small number of micro/nano-crystals of the molecular (magnetic) conductors, especially micro/nano-wires, are known, of which highly conducting nanowires are necessary as a key component in the development of the next generation of nano-size transistors and spin-transistors. Very recently, we succeeded in preparing highly conductive micro/nano-wires of CT salts between bent donor molecules developed by one of the author’s group and magnetic FeX(4)(–) (X = Cl, Br) ions: (1) by electrochemical oxidation of the bent donor molecules with a silicon wafer electrode coated with a phospholipid multi-lamellar structure as well as, (ii) by electrochemical oxidation of the bent donor molecules with a large arc structure, in the presence of NBu(4)FeX(4) supporting electrolytes. …”
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    New Development in the Preparation of Micro/Nano-Wires of Molecular (Magnetic) Conductors
  17. 3757
    “…Comparing the process-of-record device against the 28 nm LP HK/MG device, the thickness of the electrical oxide layer in the new device was reduced by 3.1% in the case of n-type field effect transistors and by 10% for p-type field effect transistors. …”
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    Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device
  18. 3758
    “…A rapid adaptation of black phosphorus (BP) field-effect transistors (FETs) and gallium nitride (GaN) transistors in the CS field is also apparent. …”
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    Detecting the Knowledge Domains of Compound Semiconductors
  19. 3759
    “…The model has been successfully tested for advanced image sensors with six transistors fabricated in a commercial FAB, applying a CMOS 180 nm technology node with four metals. …”
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    Revisiting the Modeling of the Conversion Gain of CMOS Image Sensors with a New Stochastic Approach
  20. 3760
    “…It includes CMOS, JFETs and vertical bipolar transistors with a potential multi-megarad hardness. …”
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    A mixed analog-digital radiation hard technology for high energy physics electronics: DMILL (Durci Mixte sur Isolant Logico-Linéaire)
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