“…The book reviews the basic building blocks of the electronic systems composed of digital (logic levels, gate output circuitry) and analog components (resistors, capacitors, diodes, transistors). The text also describes operational amplifiers (op-amp) that use a negative feedback technique to improve the parameters of the op-amp. …”
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“…The book's early chapters focus on the basic components, such as resistors, capacitors, inductors, and transistors. Readers are then introduced to combinations of these components that form the fundamental circuits from which most electronic equipment is built. …”
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“…Various measurement techniques are described and used in this book, including: impedance measurements, complex power measurements, frequency response measurements, power spectrum measurements, current versus voltage characteristic measurements of diodes, bipolar junction transistors, and Mosfets. The book includes end-of-chapter problems for additional exercises geared towards hands-on learning, experimentation, comparisons between measured results and those obtained from theoretical calculations.…”
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“…The aim of this book is to present preliminary to advanced level experiments with application orientation on vacuum tubes, semiconductors, transistors, FETS and thyristors in a systematic, lucid and illustrative way. …”
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“…The degradation is due to the large threshold shifts in the PMOS transistors used.…”
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“…We have successfully implemented both ASICs in 0.25 um CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. …”
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“…We have successfully implemented both ASICs in 0.25 mm CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. …”
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“…In addition, if ten years ago the use of natural dopamine receptors on cell membranes seemed impossible for biosensors, the actual technology allows co-integrate transistors and vesicles with natural receptors of dopamine, like G protein-coupled receptors. …”
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“…These new results obtained about R(ON_dyn) will help elucidate trap behaviors in switching transistors.…”
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“…It has been discovered that wide-bandgap (WBG) switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) offer considerable potential for outperforming conventional silicon (Si) switching devices in terms of breakdown voltage, high temperature capability, switching speed, and conduction losses. …”
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“…This second edition is completely updated and expanded, and now comprises new chapters on spin electronics and quantum information processing, transport in inhomogeneous magnetic fields, organic/molecular electronics, and applications of field effect transistors. The book also provides an overview of semiconductor processing technologies and experimental techniques. …”
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“…The performance of the tetraphenyl‐substituted compound as n‐channel semiconductor was evaluated in organic field effect transistors.…”
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“…It was fabricated with a 150 nm HV-CMOS process which includes a layer to isolate the bulk of the PMOS transistors from the collecting node of the sensor. …”
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“…Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. …”
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“…We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. …”
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“…The study is directed towards the development of a new type of organic semiconductors based on these hybrid materials for application in organic field effect transistors and solar cells.…”
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“…Implementation into organic thin-film transistors (OTFTs) affords average electron field-effect mobility of 3.1 × 10(−3) cm(2) V(−1) s(−1) and threshold voltage of 25.6 V for all synthetic routes. …”
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“…Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. …”
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“…Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors…”
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“…Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. …”
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