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  1. 3821
    por He, Gang, Sun, Zhaoqi
    Publicado 2012
    “…A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. …”
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    High-k gate dielectrics for CMOS technology
  2. 3822
    “…GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. …”
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    Online Artículo Texto
    Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination
  3. 3823
    “…Finally, some of the challenges in current and emerging applications of CNTs in fields such as energy storage, transistors, tissue engineering, drug delivery, electronic cryptographic keys and sensors are considered.…”
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    Online Artículo Texto
    Carbon Nanotube Assembly and Integration for Applications
  4. 3824
    “…These conclusions are confirmed by the p(+)-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. …”
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    Online Artículo Texto
    Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon
  5. 3825
    “…These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.…”
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    Online Artículo Texto
    AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
  6. 3826
    “…Specifically, designs with tunable cutoff frequency of the input high‑pass filter may suffer from excessive nonlinearity, since the gate-source voltages of the transistors forming the pseudoresistors vary following the signal being amplified. …”
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    Online Artículo Texto
    Analysis and Reduction of Nonlinear Distortion in AC-Coupled CMOS Neural Amplifiers with Tunable Cutoff Frequencies
  7. 3827
    “…We compute the bandgap and electron affinity values using the HSE06 functional and estimate the leakage current density of transistors with monolayer Ca(OH) [Formula: see text] and Mg(OH) [Formula: see text] as dielectrics when combined with HfS [Formula: see text] and WS [Formula: see text] , respectively. …”
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    Online Artículo Texto
    A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)(2) and Mg(OH)(2)
  8. 3828
    “…We also discuss how the full encapsulation of WS(2) with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors.…”
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    Online Artículo Texto
    Enhanced Field-Effect Control of Single-Layer WS(2) Optical Features by hBN Full Encapsulation
  9. 3829
    “…Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. …”
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    Online Artículo Texto
    Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory
  10. 3830
    “…Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. …”
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    Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
  11. 3831
    “…Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. …”
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    Organic semiconductors in sensor applications
  12. 3832
    por Gromov, V, Kluit, R
    Publicado 2008
    “…The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable operation in harsh radiation environment possible. …”
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    A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.
  13. 3833
    por Tic, Thomas, Phillips, P W, Weber, M
    Publicado 2009
    “…Previously R&D on the serial powering of silicon strip detector modules had been based on discrete commercial electronics, but with the delivery of the Atlas Binary Chip Next chip in 0.25 micron CMOS technology (ABCN-25) and the Serial Powering Interface chip (SPi), custom elements of shunt regulators and transistors became available. These ASICs can be used to implement three complementary serial powering architectures. …”
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    Performance and Comparison of Custom Serial Powering Regulators and Architectures for SLHC Silicon Trackers
  14. 3834
    “…I(4)TAP is an n‐channel material in thin‐film transistors with average electron mobilities exceeding 1 cm(2) (Vs)(−1).…”
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    The Radical Anion, Dianion and Electron Transport Properties of Tetraiodotetraazapentacene
  15. 3835
    por Kurzweil, Peter
    Publicado 2009
    “…The glass electrode, introduced nearly hundred years ago, and chemical sensors based on field effect transistors (ISFET) show specific drawbacks with respect to handling and long-time stability. …”
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    Metal Oxides and Ion-Exchanging Surfaces as pH Sensors in Liquids: State-of-the-Art and Outlook
  16. 3836
    “…The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. …”
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    Online Artículo Texto
    Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
  17. 3837
    “…Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. …”
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    Online Artículo Texto
    Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
  18. 3838
    “…We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. …”
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    Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
  19. 3839
    “…They were incorporated into graphene transistors for their near infrared detection application. …”
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    Facile synthesis of AgBiS(2) nanocrystals for high responsivity infrared detectors
  20. 3840
    “…Three-terminal synaptic transistors utilizing Li-ion intercalation exhibits reliable synaptic characteristics by exploiting the advantage of non-distributed weight updates owing to stable ion migrations. …”
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    Two-Terminal Lithium-Mediated Artificial Synapses with Enhanced Weight Modulation for Feasible Hardware Neural Networks
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