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3821“…A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. …”
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3822por Chen, Kun-Ming, Lin, Chuang-Ju, Chuang, Chia-Wei, Pai, Hsuan-Cheng, Chang, Edward-Yi, Huang, Guo-Wei“…GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. …”
Publicado 2023
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3823por Venkataraman, Anusha, Amadi, Eberechukwu Victoria, Chen, Yingduo, Papadopoulos, Chris“…Finally, some of the challenges in current and emerging applications of CNTs in fields such as energy storage, transistors, tissue engineering, drug delivery, electronic cryptographic keys and sensors are considered.…”
Publicado 2019
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3824por Yang, Guixia, Wu, Kunlin, Liu, Jianyong, Zou, Dehui, Li, Junjie, Lu, Yi, Lv, Xueyang, Xu, Jiayun, Qiao, Liang, Liu, Xuqiang“…These conclusions are confirmed by the p(+)-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. …”
Publicado 2020
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3825por Jorudas, Justinas, Šimukovič, Artūr, Dub, Maksym, Sakowicz, Maciej, Prystawko, Paweł, Indrišiūnas, Simonas, Kovalevskij, Vitalij, Rumyantsev, Sergey, Knap, Wojciech, Kašalynas, Irmantas“…These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.…”
Publicado 2020
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3826“…Specifically, designs with tunable cutoff frequency of the input high‑pass filter may suffer from excessive nonlinearity, since the gate-source voltages of the transistors forming the pseudoresistors vary following the signal being amplified. …”
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3827“…We compute the bandgap and electron affinity values using the HSE06 functional and estimate the leakage current density of transistors with monolayer Ca(OH) [Formula: see text] and Mg(OH) [Formula: see text] as dielectrics when combined with HfS [Formula: see text] and WS [Formula: see text] , respectively. …”
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3828por Di Renzo, Anna, Çakıroğlu, Onur, Carrascoso, Felix, Li, Hao, Gigli, Giuseppe, Watanabe, Kenji, Taniguchi, Takashi, Munuera, Carmen, Rizzo, Aurora, Castellanos-Gomez, Andres, Mastria, Rosanna, Frisenda, Riccardo“…We also discuss how the full encapsulation of WS(2) with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors.…”
Publicado 2022
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3829por Ng, Tse Nga, Schwartz, David E., Lavery, Leah L., Whiting, Gregory L., Russo, Beverly, Krusor, Brent, Veres, Janos, Bröms, Per, Herlogsson, Lars, Alam, Naveed, Hagel, Olle, Nilsson, Jakob, Karlsson, Christer“…Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. …”
Publicado 2012
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3830por Petritz, Andreas, Fian, Alexander, Głowacki, Eric D., Sariciftci, Niyazi Serdar, Stadlober, Barbara, Irimia‐Vladu, Mihai“…Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. …”
Publicado 2015
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3831“…Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. …”
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3832“…The combination of the natural properties of thin gate oxide MOS transistors with a gate-all-around layout approach makes stable operation in harsh radiation environment possible. …”
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3833“…Previously R&D on the serial powering of silicon strip detector modules had been based on discrete commercial electronics, but with the delivery of the Atlas Binary Chip Next chip in 0.25 micron CMOS technology (ABCN-25) and the Serial Powering Interface chip (SPi), custom elements of shunt regulators and transistors became available. These ASICs can be used to implement three complementary serial powering architectures. …”
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3834por Wiesner, Thomas, Wu, Zhu, Han, Jie, Ji, Lei, Friedrich, Alexandra, Krummenacher, Ivo, Moos, Michael, Lambert, Christoph, Braunschweig, Holger, Rudin, Benjamin, Reiss, Hilmar, Tverskoy, Olena, Rominger, Frank, Dreuw, Andreas, Marder, Todd B., Freudenberg, Jan, Bunz, Uwe H. F.“…I(4)TAP is an n‐channel material in thin‐film transistors with average electron mobilities exceeding 1 cm(2) (Vs)(−1).…”
Publicado 2022
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3835por Kurzweil, Peter“…The glass electrode, introduced nearly hundred years ago, and chemical sensors based on field effect transistors (ISFET) show specific drawbacks with respect to handling and long-time stability. …”
Publicado 2009
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3836“…The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. …”
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3837“…Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. …”
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3838por Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan“…We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. …”
Publicado 2021
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3839“…They were incorporated into graphene transistors for their near infrared detection application. …”
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3840por Baek, Ji Hyun, Kwak, Kyung Ju, Kim, Seung Ju, Kim, Jaehyun, Kim, Jae Young, Im, In Hyuk, Lee, Sunyoung, Kang, Kisuk, Jang, Ho Won“…Three-terminal synaptic transistors utilizing Li-ion intercalation exhibits reliable synaptic characteristics by exploiting the advantage of non-distributed weight updates owing to stable ion migrations. …”
Publicado 2023
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