“…This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm(2) chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. …”
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“…The eleven chapters in the book cover the following areas of interest relating to applied spectroscopy and nanoscience: ·         Raman spectroscopic characterization, modeling and simulation studies of carbon nanotubes, ·         Characterization of plasma discharges using laser optogalvanic spectroscopy, ·         Fluorescence anisotropy in understanding protein conformational disorder and aggregation, ·         Nuclear magnetic resonance spectroscopy in nanomedicine, ·         Calculation of Van der Waals interactions at the nanoscale, ·         Theory and simulation associated with adsorption of gases in nanomaterials, ·         Atom-precise metal nanoclusters, ·         Plasmonic properties of metallic nanostructures, two-dimensional materials, and their composites, ·         Applications of graphene in optoelectronic devices and transistors, ·         Role of graphene in organic photovoltaic device technology, ·         Applications of nanomaterials in nanomedicine.…”
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“…AM06 combines custom memory arrays, standard logic cells and IP blocks within a 168 mm^2 silicon area with 421 million transistors and can perform bitwise comparisons at 1.6 Pbit/s, consuming ~2 fJ/bit per comparison thanks to the optimized design based on the XORAM cells.…”
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“…This allows to use a rather simple pixel unit cell which requires only a small number of transistors. The column periphery logic is designed for readout and trigger rates expected for full LHC luminosity. …”
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“…Extended functionality with hundreds of transistors in each electronics cell can serve a variety of purposes. …”
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“…In order to assess how these new physical parameters impact on the device properties, such as noise and radiation hardness, this paper presents and discusses the characterization of 65 nm CMOS transistors, in terms of intrinsic gain, gate leakage current and noise performance, before and after irradiation with g-rays. …”
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“…As Moore's Law continues to deliver more and more transistors, the mainstream processor industry is preparing to expand its investments in areas other than simple core count. …”
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“…After exposure to 3 MeV protons till 1 Grad dose, the 65 nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents. …”
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“…The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. …”
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“…The analytical model avoids the need of time consuming parametric sweeps on the aspect ratios of the various transistors of the delay element in order to optimize it. …”
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“…Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. …”
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“…Diketopyrrolopyrrole (DPP) and its derivatives, as electron deficient units, are widely used as building blocks in organic field-effect transistors, obtaining high performance. However, further modification of the DPP structure is crucial for the development of organic semiconductors. …”
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“…In contrast, the potentiometric biosensors were based on aptamer-modified CNT field-effect transistors (CNTFETs). Since aptamers are artificial oligonucleotides and thus are smaller than the Debye length, proteins can be detected with high sensitivity. …”
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“…The InN devices work as open gate thin film sensitive transistors. Condensed water droplets, formed on the open gate region of the sensors, deplete the electron accumulation layer on the surface of InN film, thus decreasing the current of the sensor. …”
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“…Organic molecules and polymers with extended π-conjugation are appealing as advanced electronic materials, and have already found practical applications in thin-film transistors, light emitting diodes, and chemical sensors. …”
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“…Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. …”
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“…Since hexagonal diamond acts as an insulator and sp(2) bonded rings act as conductors, these predicted materials have potential applications for transistors and other electronic components. We describe the structure of a proposed series of carbon allotropes, novamene, and carry out a detailed computational analysis of the structural and electronic properties of the simplest compound in this class: the single-ring novamene. …”
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“…In this study, we observed the atomistic tensile deformation process of zirconium nanocontacts, which are typical nanostructures used in connection of nanometer-sized wires, transistors, and diodes, memory devices, and sensors, by in situ transmission electron microscopy. …”
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“…π-Conjugated polymers are widely used in optoelectronics for fabrication of organic photovoltaic devices, organic light-emitting diodes, organic field effect transistors, and so on. Here we describe the protocol for polycondensation of bifunctional aryl ethers or aryl ammonium salts with aromatic dimetallic compounds through cleavage of inert C–O/C–N bonds. …”
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“…In this paper, on the basis of the principle of field-effect transistors (FETs), a perceptual surgical knife is proposed to detect the electrons or electric field of the human body with distinguishable signals. …”
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