“…Two bidirectional approaches under the optimized conditions were successful, and the resulting π‐extended molecules were tested as organic semiconductors in organic thin‐film transistors.…”
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“…Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in the same area consumption, and thus it is more suitable for 2.5 V circuits ESD protections considering the CDM protection applications.…”
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“…A review of ferroelectric materials and devices is carried out, including on ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors.…”
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“…Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high thermal conductivity, and excellent mechanical behavior, it is used as a potential candidate in various fields such as supercapacitors, water-splitting, photocatalysis, biomedical, sensors, and so on. …”
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“…Single-wall carbon nanotubes (SWCNTs) are promising materials for electronic applications, such as transparent electrodes and thin-film transistors. However, the dispersion of isolated SWCNTs into solvents remains an important issue for their practical applications. …”
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“…These sheets have been realized directly on silicon substrates followed by the fabrication of field-effect transistors showing the low leakage current and reasonable mobility for the nano-sensors. …”
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“…Advanced new applications like light-emitters, including UV operating LEDs, normally on and normally off high frequency operating transistors are expected. With progress in clean room technology, advanced photonic and quantum optic applications are envisioned in a close future. …”
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“…To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. …”
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“…This approach enables designers to calculate noise, bandwidth, EMI, and the required bias parameters of the transistors used in  application specific amplifiers in order to meet the SER requirements…”
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“…Second, it describes circuits that more traditional engineering introductions would postpone: on the third day, we build a radio receiver; on the fifth day, we build an operational amplifier from an array of transistors. The digital half of the course centers on applying microcontrollers, but gives exposure to Verilog, a powerful Hardware Description Language. …”
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“…It describes dressed photon technology and its applications, including implementation of nanophotonic devices and systems, fabrication methods and performance characteristics of ultrathin, ultraflexible organic light‐emitting diodes, organic solar cells and organic transistors. .…”
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“…Elle est entrée dans l'industrie où lasers, transistors et supraconducteurs lui doivent d'exister. …”
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“…In addition, a new calibration model was suggested for RADFETs (RADiation-sensitive Field Effect Transistors) covering saturating range. A new Graphical User Interface (GUI) was created, which displays and monitors the results produced by the correction algorithm. …”
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“…On one hand, they are already realized in mass products, e.g., in high-electron-mobility field-effect transistors and quantum-well lasers. On the other hand, they allow, in specially tailored systems, the investigation of fundamental properties, such as many-particle interactions of electrons in reduced dimensions. …”
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“…The availability of transparent p-type semiconductors with finite magnetization enables the fabrication of transparent magnetic diodes and transistors, for example, with a multitude of potential technological applications.…”
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“…In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. …”
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“…This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. …”
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“…Meyer–Neldel rule for charge carrier mobility measured in C(60)-based organic field-effect transistors (OFETs) at different applied source drain voltages and at different morphologies of semiconducting fullerene films was systematically studied. …”
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“…Configured as field-effect transistors (FETs), the as-synthesized single-layered rGO-Au nanocomposites exhibit higher hole mobility and conductance when compared to the rGO sheets, promising its applications in nanoelectronics. …”
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“…In the field of microsensors for environmental applications, Ion Selective Field Effect Transistors (ISFETs) have a special interest. They are particularly helpful for measuring pH and other ions in small volumes and they can be integrated in compact flow cells for continuous measurements. …”
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