“…Electronics, and is divided into twelve chapters viz. circuit analysis (network analysis and network theorems) semiconductors and semiconductor diodes, clippers and clampers, two terminal devices (rectifiers Zener, varactor and tunnel diodes, photodiode, LED and solar cell). Bipolar Junction Transistors (CE, CB, and CC configurations), Amplifiers two port networks, h-parameters and CE, CB, CC and RC coupled amplifiers, feedback in amplifiers, types of feedback sinusoidal oscillators (Colpitt, Hartley phase-shift and Wien bridge oscillators). …”
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“…The field of pixel detectors has grown strongly in recent years through progress in CMOS technology, which permits many hundreds of transistors to be implemented in an area of 50-200 um2. …”
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“…The advantages such as size scale, aspect ratio and other properties of nanowires are especially apparent in the use of electrical sensors such as electrochemical sensors and in the use of field-effect transistors. The preparation methods of nanowires and their properties are discussed along with their advantages towards electrochemical sensors and biosensors. …”
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“…In these pixels, the front-end has been implemented inside the diode using both NMOS and PMOS transistors. The pixel pitch is 50 μm × 250 μm for all pixels. …”
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“…In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated at high TID is investigated. …”
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“…By using the sorted s-SWCNTs as a channel material, we constructed thin-film transistors showing charge-carrier mobilities higher than 10 cm(2) V(−1) s(−1) and on/off ratios higher than 10(3).…”
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“…[Image: see text] The ability to control thermal transport is critical for the design of thermal rectifiers, logic gates, and transistors, although it remains a challenge to design materials that exhibit large changes in thermal conductivity with switching ratios suitable for practical applications. …”
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“…The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes a coherent channel that can form a three-dimensional electron sea. …”
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“…The lack of a bandgap makes bulk graphene unsuitable for room temperature transistors with a sufficient on/off current ratio. …”
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“…Conjugated polymers have emerged over the past several decades as key components for a range of applications, including semiconductors, molecular wires, sensors, light switchable transistors and OLEDs. Nevertheless, the construction of many such polymers, especially highly substituted variants, typically involves a multistep synthesis. …”
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“…These results may find potential applications in optical bistable devices such as all-optical switches, optical transistors and optical memories.…”
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“…We report improved sensitivity to NO, NO [Formula: see text] and NH [Formula: see text] gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. …”
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“…Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. …”
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“…The energy-level alignment of molecular transistors can be controlled by external gating to move molecular orbitals with respect to the Fermi levels of the source and drain electrodes. …”
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“…Specifically, we report about the results of interdisciplinary activities on the development of thin, flexible SCs by an additive technology based on Supersonic Cluster Beam Deposition (SCBD) to be implemented into supercapacitive electrolyte gated transistors and supercapacitive microbial fuel cells. …”
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“…Interestingly, the introduction of carboxylic groups on the surface of PPy nanotube transistors resulted in enhanced sensitivity to DMMP via intermolecular hydrogen bonding. …”
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“…In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm(2) at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. …”
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“…Fully operational pentacene thin film transistors have also been implanted and we show how a controlled N ion implantation process can induce stable modifications in the threshold voltage, without affecting the device performance.…”
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“…While most of the electronics industry is dependent on the ever-decreasing size of lithographic transistors, this scaling cannot continue indefinitely. …”
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“…As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. …”
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