“…Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. …”
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“…The controllability and programmability of such metasurfaces are governed through DC bias and occasionally a radio-frequency modulation applied to the active components of the unit cells of the metasurface, e.g. diodes and transistors. This article overviews some of the recently proposed passive and dynamic metasurfaces and shows that metasurfaces can enhance the performance of wireless communication systems thanks to their unique physical features such as real-time signal coding, nonreciprocal-beam radiation, nonreciprocal beamsteering amplification and advanced pattern-coding multiple access communication.…”
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“…[Image: see text] Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility, making it suitable for IR-range optoelectronics and high-frequency transistors. However, the development of InN-based electronics is hampered by the metastable nature of InN. …”
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“…We also grow dopant-modulated structures in which specific device functions, including p-n diodes and field-effect transistors, can be precisely localized at the kinked junctions in the nanowires.…”
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“…Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. …”
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“…To overcome this constraint, we have developed new devices integrating ultrathin and flexible silicon nanomembrane transistors into the electrode array, enabling new dense arrays of thousands of amplified and multiplexed sensors connected using many fewer wires. …”
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“…Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. …”
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“…The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. …”
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“…We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. …”
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“…Solution-processed field-effect transistors based on the graphene halides resulted in device performances were comparable to, or even better than, that of graphene oxide.…”
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“…With the development of single-atom transistors, consisting of single dopants, nanofabrication has reached an extreme level of miniaturization. …”
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“…In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. …”
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“…Electric dipole engineering is now an emerging technology for high electron-mobility transistors, ferroelectric random access memory and multiferroic devices etc. …”
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“…Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. …”
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“…While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. …”
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“…In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. …”
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“…We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen defects. …”
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“…To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm(2)·V(−1)·s(−1)), without using any physical transfer process. …”
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“…The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we have used scanning tunneling microscopy to investigate the poly (3-octyl-thiophene) (P3OT)-graphene interface. …”
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“…We demonstrate that thin-film transistors made with networks of carbon nanotubes work effectively as light sensors under laser illumination. …”
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