“…In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. …”
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“…The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. …”
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“…In addition, the integration of cellulose electro-active paper is highlighted to form various functional devices including but not limited to bending actuators, flexible speaker, strain sensors, energy harvesting transducers, biosensors, chemical sensors and transistors for electronic applications. The frontiers in cellulose paper devices are reviewed together with the strategies and perspectives of cellulose electro-active paper and cellulose nanocomposite research and applications.…”
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“…Recent progress in nanotechnology enables the production of atomically abrupt interfaces in multilayered junctions, allowing for an increase in the number of transistors in a processor. However, uniform electron transport has not yet been achieved across the entire interfacial area in junctions due to the existence of local defects, causing local heating and reduction in transport efficiency. …”
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“…FNWs display n-type semiconducting behavior and are used in a diverse range of applications, including field-effect transistors, solar cells, chemical sensors, and photocatalysts. …”
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“…Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices.…”
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“…Finally, these findings confirm that, in its thermodynamically favored Td form, the utilization of WTe(2) in electronic device architectures such as field effect transistors may need to be reevaluated.…”
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“…This work investigates the intrinsic characteristics of multilayer WSe(2) field effect transistors (FETs) by analysing Pulsed I-V (PIV) and DC characteristics measured at various temperatures. …”
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“…In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. …”
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“…Graphene field effect transistors are becoming an integral part of advanced devices. …”
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“…Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. …”
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“…This was achieved utilizing electron-beam bombardment and following developing processes, prior to the use of conventional organic solvents. Field-effect transistors were fabricated on the transferred graphene in order to explore their Dirac points and carrier motilities in the ambient condition - the results were then compared with those from the conventional wet chemical treatment. …”
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“…CRP biosensors can be classified in: (a) field effect transistors, (b) optical immunosensors based on surface plasmon resonance, total internal reflection, fluorescence and chemiluminescence, (c) electrochemical sensors based on potentiometry, amperometry, and electrochemical impedance, and (d) piezoresistive sensors, such as quartz crystal microbalances and microcantilevers. …”
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“…Signal processing circuitry based on organic thin-film transistors (OTFTs) have significant potential in realizing wearable sensor devices due to their superior mechanical flexibility and biocompatibility. …”
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“…Here we demonstrate a flexible and printed circuit system consisting of an enzyme-based amperometric sensor, feedback control and amplification circuits based on organic thin-film transistors. The feedback control and amplification circuits based on pseudo-CMOS inverters were successfuly integrated by printing methods on a plastic film. …”
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“…With an exceptionally low LUMO level at –4.7 eV, this NIR dye (λ(max) ≈ 1100 nm, ε ≈ 10(5) mol(–1) L cm(–1)) exhibits adequate stability under ambient conditions, with electron mobility up to 0.96 cm(2) V(–1) s(–1) measured in solution-processed organic field-effect transistors. A special metal-free C–C coupling serves as a pivotal step in constructing the polycyclic π-framework of this low-bandgap chromophore, by fusing an electron-deficient naphthalenediimide moiety with an electron-donating naphthalenediamine. …”
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“…Arrays of graphene field effect transistors were fabricated on 2” BN/sapphire substrates demonstrating scalability and device performance enhancement.…”
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“…[Image: see text] All-electronic DNA biosensors based on graphene field-effect transistors (GFETs) offer the prospect of simple and cost-effective diagnostics. …”
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“…The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. …”
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“…An interesting type of RRAM was demonstrated recently for having alternating (dynamic switching) current rectification properties that may be used for complementary operation much like CMOS transistors. Such artificial synaptic devices may be switched dynamically between excitatory and inhibitory modes to allow doubling of the array density and significantly reducing the peripheral circuit complexity.…”
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