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  1. 4121
    por Rammer, Jorgen
    Publicado 2017
    “…Complete with numerous exercises, and with all the necessary mathematics and physics included in appendices, this book guides the reader seamlessly through the principles of quantum mechanics and the quantum theory of metals and semiconductors, before describing in detail how devices are exploited within electric circuits and in the hardware of computers, for example as amplifiers, switches and transistors. Includes numerous exercises throughout, allowing the reader to observe theoretical concepts put to practical use and to learn about the important technological applications of quantum mechanics Assumes only basic mathematical skills, and includes the elementary physics needed for understanding the content of the chapters within the appendices Focuses on the materials, components and devices themselves whilst also incorporating a considerable amount of fundamental physics related to condensed matter theory and quantum mechanics…”
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    Physics of electronic materials: principles and applications
  2. 4122
    por Guo, C C, Schmitt, P, Deptuch, G, Hu, Y Y
    Publicado 2001
    “…Bipolar transistors are interesting for low noise front-end readout systems when high speed and low power consumption are required. …”
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    A fully integrated, low noise and low power BiCMOS front-end readout system for capacitive detectors
  3. 4123
    por Bromley, D Allan
    Publicado 2002
    “…He covers such topics as relativity and quantum mechanics, the Manhattan project, superconductivity, transistors and the revolution brought about by solid-state electronics, protein folding, the uses of nuclear and atomic physics in biology and medicine, plate tectonics, the expansion of the universe and the Big Bang, and gravitational radiation. …”
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    A century of physics
  4. 4124
    por Havránek, Miroslav
    Publicado 2018
    “…Evolution of technologies for the fabrication of microelectronic circuits follows Moore’s laws. Transistors become smaller and electronic chips reach higher complexity. …”
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    Development of Pixel Front-End Electronics using Advanced Deep Submicron CMOS Technologies
  5. 4125
    “…The Marx circuit is based on new SiC MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), with 15 compact stages, capable of running with capacitive type loads during normal operation and also short-circuit mode at reduced repletion rate. …”
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    Solid-state Marx generator for the compact linear collider breakdown studies
  6. 4126
    “…Measurement data from the characterization of preamplifiers using different kinds of capacitors in the feedback network help to gain some insight into the damage mechanisms in pMOS transistors irradiated with large ionizing doses. The dependence of performance degradation on the kind of radiation source used in the tests is also discussed.…”
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    65-nm CMOS front-end channel for pixel readout in the HL-LHC radiation environment
  7. 4127
    por Redondo, L M, Kandratsyeu, A, Barnes, M J
    Publicado 2018
    “…This paper describes the design strategy for a new Marx generator, based on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), proposed for Kicker magnet applications. …”
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    Marx Generator Prototype for Kicker Magnets Based on SiC MOSFETs
  8. 4128
    “…The consequent differences in growth and annealing rates of interface traps lead to a large asymmetric degradation of the short-channel transistors. The technology computer-aided design simulations are used to qualitatively confirm the proposed degradation model.…”
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    Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses
  9. 4129
    “…Well-aligned microrod shaped 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single-crystal organic thin-film-transistors (OTFTs) were fabricated via solvent mediated molecular tailoring with a polymeric sacrificial layer, exhibiting saturation mobility of >2 cm(2) V(−1) s(−1). …”
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    Online Artículo Texto
    High-performance organic circuits based on precisely aligned single-crystal arrays
  10. 4130
    “…Through extensive experiments we demonstrate novel SLIM bitcells (1T-1R/2T-1R) comprising non-filamentary bilayer analog OxRAM devices with NMOS transistors. Proposed bitcells are capable of implementing both Memory and Logic operations simultaneously. …”
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    Online Artículo Texto
    SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
  11. 4131
    “…New, more radiation hard technologies which could replace the current amplifiers have been studied as well: SiGe bipolar, Si CMOS FET and GaAs FET transistors have been irradiated with neutrons and protons with fluences up to ten times the total expected fluences for ten years of running of the high luminosity LHC. …”
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    Upgrade plans for the Hadronic-Endcap Calorimeter of ATLAS for the high luminosity stage of the LHC
  12. 4132
    por Lee, Sanghyo, Choi, Hyung Woo, Figueiredo, Cátia Lopes, Shin, Dong-Wook, Moncunill, Francesc Mañosa, Ullrich, Kay, Sinopoli, Stefano, Jovančić, Petar, Yang, Jiajie, Lee, Hanleem, Eisenreich, Martin, Emanuele, Umberto, Nicotera, Salvatore, Santos, Angelo, Igreja, Rui, Marrani, Alessio, Momentè, Roberto, Gomes, João, Jung, Sung-Min, Han, Soo Deok, Bang, Sang Yun, Zhan, Shijie, Harden-Chaters, William, Suh, Yo-Han, Fan, Xiang-Bing, Lee, Tae Hoon, Jo, Jeong-Wan, Kim, Yoonwoo, Costantino, Antonino, Candel, Virginia Garcia, Durães, Nelson, Meyer, Sebastian, Kim, Chul-Hong, Lucassen, Marcel, Nejim, Ahmed, Jiménez, David, Springer, Martijn, Lee, Young-Woo, An, Geon-Hyoung, Choi, Youngjin, Sohn, Jung Inn, Cha, SeungNam, Chhowalla, Manish, Amaratunga, Gehan A. J., Occhipinti, Luigi G., Barquinha, Pedro, Fortunato, Elvira, Martins, Rodrigo, Kim, Jong Min
    Publicado 2023
    “…Here, we present a textile electronic system with functional one-dimensional devices, including fiber photodetectors (as an input device), fiber supercapacitors (as an energy storage device), fiber field-effect transistors (as an electronic driving device), and fiber quantum dot light-emitting diodes (as an output device). …”
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    Online Artículo Texto
    Truly form-factor–free industrially scalable system integration for electronic textile architectures with multifunctional fiber devices
  13. 4133
    “…Information in conventional digital computing platforms is encoded in the steady states of transistors and processed in a quasi-static way. Memristors are a class of emerging devices that naturally embody dynamics through their internal electrophyiscal processes, enabling nonconventional computing paradigms with enhanced capability and energy efficiency, such as reservoir computing. …”
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    Online Artículo Texto
    LiNbO(3) dynamic memristors for reservoir computing
  14. 4134
    “…On its inner surface in contact with the implant, an array of strain gauges with multiplexing transistors, built on single-crystalline silicon nanomembranes, is incorporated to map the strain experienced by the implant with high sensitivity and spatial resolution, providing information about bone-implant biomechanics for early diagnosis to minimize the probability of catastrophic instrument failures. …”
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    Online Artículo Texto
    A smart coating with integrated physical antimicrobial and strain-mapping functionalities for orthopedic implants
  15. 4135
    por Zhang, Yuting, Ge, Qianhui, Zeng, Yanhan
    Publicado 2023
    “…To ensure stability and realize low current consumption, adaptive power transistors are proposed to enable system tropology to alter between 2-stage and 3-stage. …”
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    Online Artículo Texto
    A 0.6 V(IN) 100 mV Dropout Capacitor-Less LDO with 220 nA I(Q) for Energy Harvesting System
  16. 4136
    “…A surface-potential-based analytical large-signal model, which is applicable to both ballistic and quasi-ballistic transport in InGaAs high electron mobility transistors, is developed. Based on the one-flux method and a new transmission coefficient, a new two-dimensional electron gas charge density is derived, while the dislocation scattering is novelly taken into account. …”
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    Online Artículo Texto
    A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation Scattering
  17. 4137
    “…The fabrication of vertically stacked SiGe nanosheet (NS) field-effect transistors (FETs) was demonstrated in this study. The key process technologies involved in this device fabrication are low pressure chemical vapor deposition SiGe/Si multilayer epitaxy, selective etching of Si layers over SiGe layers using tetramethyl-ammonium-hydroxide wet solution, and atomic layer deposition of Y(2)O(3) gate dielectric. …”
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    Online Artículo Texto
    Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications
  18. 4138
    por Alyami, Mohammed, Alotibi, Satam
    Publicado 2023
    “…Organic semiconductors (OSCs) have attracted considerable attention for many promising applications, such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), and organic photovoltaics (OPVs). …”
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    Online Artículo Texto
    Physical Properties of E143 Food Dye as a New Organic Semiconductor Nanomaterial
  19. 4139
    “…Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption.…”
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    Online Artículo Texto
    Non-volatile optoelectronic memory based on a photosensitive dielectric
  20. 4140
    “…[Image: see text] The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. …”
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    Online Artículo Texto
    Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS(2)
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