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  1. 4141
    “…The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM). …”
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    Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
  2. 4142
    “…Here we show that solid-state nanopores can be combined with silicon nanowire field-effect transistors (FETs) to create sensors in which detection is localised and self-aligned at the nanopore. …”
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    Local electrical potential detection of DNA by nanowire-nanopore sensors
  3. 4143
    por Haruta, Mitsutaka, Kurata, Hiroki
    Publicado 2012
    “…The structural analysis of crystal defects in organic thin films provides fundamental insights into their electronic properties for applications such as field effect transistors. Observation of crystal defects in organic thin films has previously been performed at rather low resolution by conventional transmission electron microscopy based on phase-contrast imaging. …”
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    Direct observation of crystal defects in an organic molecular crystals of copper hexachlorophthalocyanine by STEM-EELS
  4. 4144
    “…In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. …”
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    Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices
  5. 4145
    “…Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. …”
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    Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition
  6. 4146
    “…Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. …”
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    Extreme sensitivity of graphene photoconductivity to environmental gases
  7. 4147
    “…Graphene nanoribbons (GNR) are one of the most promising candidates for the fabrication of graphene-based nanoelectronic devices such as high mobility field effect transistors (FET). Here, we report a high-yield fabrication of a high quality another type of GNR analogue, fully flattened carbon nanotubes (flattened CNTs), using solution-phase extraction of inner tubes from large-diameter multi-wall CNTs (MWCNTs). …”
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    Fabrication and Characterization of Fully Flattened Carbon Nanotubes: A New Graphene Nanoribbon Analogue
  8. 4148
    por Li, Yunlong, Wu, Nanjian
    Publicado 2008
    “…Its threshold temperature T(th) can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. …”
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    A Low-Cost CMOS Programmable Temperature Switch
  9. 4149
    “…As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer.…”
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    Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate
  10. 4150
    “…Fused nanocrystalline thin films (grain size = 4.5–5.5 nm) on thermally grown silicon dioxide gate dielectrics produce field-effect transistors with electron mobilities as high as 25 cm(2)/(Vs) and on/off ratios of 10(5) with less than 0.5 V hysteresis in threshold voltage without the addition of indium.…”
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    Electrical Transport and Grain Growth in Solution-Cast, Chloride-Terminated Cadmium Selenide Nanocrystal Thin Films
  11. 4151
    “…Herein we report on the performance of three archetypical H-bonded DPP pigments, which show ambipolar carrier mobilities in the range 0.01–0.06 cm(2)/V s in organic field-effect transistors. Their semiconducting properties are correlated with crystal structure, where an H-bonded crystal lattice supports close and relatively cofacial π–π stacking. …”
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    Hydrogen-bonded diketopyrrolopyrrole (DPP) pigments as organic semiconductors
  12. 4152
    “…Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. …”
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    Stencil Nano Lithography Based on a Nanoscale Polymer Shadow Mask: Towards Organic Nanoelectronics
  13. 4153
    “…Based on these single crystal arrays, the organic field effect transistors exhibit the superior performance with the average mobility extracting from the saturation region of 0.2 cm(2) V(−1)s(−1) (the highest 0.47 cm(2) V(−1)s(−1)) and on/off ratio exceeding 10(5). …”
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    Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method
  14. 4154
    “…The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. …”
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    Terahertz detectors arrays based on orderly aligned InN nanowires
  15. 4155
    “…One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. …”
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    Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
  16. 4156
    “…The quantum non-linearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.…”
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    Single-photon non-linear optics with a quantum dot in a waveguide
  17. 4157
    “…Our analysis provides an insight on the skyrmion dynamics and manipulation that is critical for the realization of skyrmion-based transistors and low-power memory.…”
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    Gateable Skyrmion Transport via Field-induced Potential Barrier Modulation
  18. 4158
    “…The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO(3)/SrTiO(3)) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). …”
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    Disordered RuO(2) exhibits two dimensional, low-mobility transport and a metal–insulator transition
  19. 4159
    “…Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. …”
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    Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
  20. 4160
    por Yi, H. T., Gartstein, Y. N., Podzorov, V.
    Publicado 2016
    “…Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. …”
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    Charge carrier coherence and Hall effect in organic semiconductors
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