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  1. 4181
    “…With the potential of being utilized as circuit elements in electronic devices for Schottky barriers, ohmic contacts, and interconnection among silicon-based transistors, the silicide work at nanoscale is beneficial for nanoelectronics. …”
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    Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition
  2. 4182
    “…Here, we analyze the single-photon detection prospects for an architecture inspired by the human eye: field-effect transistors employing carbon nanotubes functionalized with chromophores. …”
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    Prospects for Bioinspired Single-Photon Detection Using Nanotube-Chromophore Hybrids
  3. 4183
    “…Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to γ-rays, protons and electrons. …”
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    Radiation tolerance of two-dimensional material-based devices for space applications
  4. 4184
    “…Doped niobium zirconium oxides are applied in field‐effect transistors and as special‐purpose coatings. Whereas their material properties are sufficiently known, their crystal structures remain widely uncharacterized. …”
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    Commensurate Nb(2)Zr(5)O(15): Accessible Within the Field Nb(2)Zr(x)O(2x+5) After All
  5. 4185
    “…Much progress has recently been made in advancing carrier mobilities in field-effect transistors through developing low-disorder conjugated polymers. …”
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    High-mobility, trap-free charge transport in conjugated polymer diodes
  6. 4186
    “…In addition, the removal of side chains resulted in the solvent resistivity while maintaining the alignment feature in organic thin-film transistors.…”
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    Alignment of Lyotropic Liquid Crystalline Conjugated Polymers in Floating Films
  7. 4187
    “…Multifunctional wearable HMI devices range from resistive random-access memory for data storage to field-effect transistors for interfacing and switching circuits, to various sensors for health and body motion sensing, and to microheaters for temperature delivery. …”
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    Metal oxide semiconductor nanomembrane–based soft unnoticeable multifunctional electronics for wearable human-machine interfaces
  8. 4188
    “…In this article we, therefore, introduce Gaussian synapses based on heterostructures of atomically thin two-dimensional (2D) layered materials, namely molybdenum disulfide and black phosphorus field effect transistors (FETs), as a class of analog and probabilistic computational primitives for hardware implementation of statistical neural networks. …”
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    Gaussian synapses for probabilistic neural networks
  9. 4189
    “…Preliminary organic thin film transistors (OTFTs) were fabricated and characterized using the 9,10-anthracene-based molecules as the semiconductor layer. …”
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    Developing 9,10-anthracene Derivatives: Optical, Electrochemical, Thermal, and Electrical Characterization
  10. 4190
    por Wang, Jingyun, Liu, Bilu
    Publicado 2019
    “…Then, electronic and optoelectronic applications of such assembly films are presented, such as thin-film transistors, transparent conductive films, mechanical and chemical sensors, photodetectors and optoelectronic devices, as well as flexible and printed electronics. …”
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    Electronic and optoelectronic applications of solution-processed two-dimensional materials
  11. 4191
    “…We report the employment of an electrohydrodynamic-jet (EHD)-printed diketopyrrolopyrrole-based copolymer (P-29-DPPDTSE) as the active layer of fabricated organic field-effect transistors (OFETs) and circuits. The device produced at optimal conditions showed a field-effect mobility value of 0.45 cm(2)/(Vs). …”
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    Electrohydrodynamic-Jet (EHD)-Printed Diketopyrrolopyroole-Based Copolymer for OFETs and Circuit Applications
  12. 4192
    “…We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS(2), used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. …”
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    Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS(2) Flakes
  13. 4193
    “…Here, we present a miniaturized lab-on-a-chip detecting system for an all-electric and label-free analysis of the emulsion droplets incorporating the nanoscopic silicon nanowires-based field-effect transistors (FETs). We specifically focus on the analysis of β-galactosidase e.g., activity, which is an important enzyme of the glycolysis metabolic pathway. …”
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    Nanosensors-Assisted Quantitative Analysis of Biochemical Processes in Droplets
  14. 4194
    “…Here, we report the fabrication of highly integrated arrays of polymer thin-film transistors and logic gates entirely through a series of solution processes. …”
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    Universal three-dimensional crosslinker for all-photopatterned electronics
  15. 4195
    por Shen, Guozhen, Chen, Di
    Publicado 2010
    “…Then, some nanoscale electronic and optoelectronic devices built on 1-D nanostructures are presented, including field-effect transistors (FETs), p-n diodes, ultraviolet (UV) detectors, light-emitting diodes (LEDs), nanolasers, integrated nanodevices, single nanowire solar cells, chemical sensors, biosensors, and nanogenerators. …”
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    One-dimensional nanostructures for electronic and optoelectronic devices
  16. 4196
    por Li, Xiuyan, Toriumi, Akira
    Publicado 2020
    “…Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. …”
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    Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
  17. 4197
    “…This study investigated the effects of a thin aluminum oxynitride (AlO(x)N(y)) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. …”
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    Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO(x)N(y) MIS Gate
  18. 4198
    “…We created MCP-based high-performance anisotropic films, independently addressable transistors, resistors, and diodes that are pattern free, scalable, and biocompatible. …”
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    Mixed-conducting particulate composites for soft electronics
  19. 4199
    “…Among the patterning technologies for organic thin-film transistors (OTFTs), the fabrication of OTFT electrodes using polymer templates has attracted much attention. …”
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    A novel dry-blending method to reduce the coefficient of thermal expansion of polymer templates for OTFT electrodes
  20. 4200
    “…Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. …”
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    Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
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