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4181“…With the potential of being utilized as circuit elements in electronic devices for Schottky barriers, ohmic contacts, and interconnection among silicon-based transistors, the silicide work at nanoscale is beneficial for nanoelectronics. …”
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4182“…Here, we analyze the single-photon detection prospects for an architecture inspired by the human eye: field-effect transistors employing carbon nanotubes functionalized with chromophores. …”
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4183por Vogl, Tobias, Sripathy, Kabilan, Sharma, Ankur, Reddy, Prithvi, Sullivan, James, Machacek, Joshua R., Zhang, Linglong, Karouta, Fouad, Buchler, Ben C., Doherty, Marcus W., Lu, Yuerui, Lam, Ping Koy“…Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to γ-rays, protons and electrons. …”
Publicado 2019
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4184“…Doped niobium zirconium oxides are applied in field‐effect transistors and as special‐purpose coatings. Whereas their material properties are sufficiently known, their crystal structures remain widely uncharacterized. …”
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4185por Nikolka, Mark, Broch, Katharina, Armitage, John, Hanifi, David, Nowack, Peer J., Venkateshvaran, Deepak, Sadhanala, Aditya, Saska, Jan, Mascal, Mark, Jung, Seok-Heon, Lee, Jin‐Kyun, McCulloch, Iain, Salleo, Alberto, Sirringhaus, Henning“…Much progress has recently been made in advancing carrier mobilities in field-effect transistors through developing low-disorder conjugated polymers. …”
Publicado 2019
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4186por Yang, Da Seul, Barłóg, Maciej, Park, Jongsik, Chung, Kyeongwoon, Shanker, Apoorv, Sun, Jonathan, Kang, Joonkoo, Lee, Kwangyeol, Al-Hashimi, Mohammed, Kim, Jinsang“…In addition, the removal of side chains resulted in the solvent resistivity while maintaining the alignment feature in organic thin-film transistors.…”
Publicado 2018
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4187por Sim, Kyoseung, Rao, Zhoulyu, Zou, Zhanan, Ershad, Faheem, Lei, Jianming, Thukral, Anish, Chen, Jie, Huang, Qing-An, Xiao, Jianliang, Yu, Cunjiang“…Multifunctional wearable HMI devices range from resistive random-access memory for data storage to field-effect transistors for interfacing and switching circuits, to various sensors for health and body motion sensing, and to microheaters for temperature delivery. …”
Publicado 2019
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4188por Sebastian, Amritanand, Pannone, Andrew, Subbulakshmi Radhakrishnan, Shiva, Das, Saptarshi“…In this article we, therefore, introduce Gaussian synapses based on heterostructures of atomically thin two-dimensional (2D) layered materials, namely molybdenum disulfide and black phosphorus field effect transistors (FETs), as a class of analog and probabilistic computational primitives for hardware implementation of statistical neural networks. …”
Publicado 2019
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4189por Vorona, Mikhail Y., Yutronkie, Nathan J., Melville, Owen A., Daszczynski, Andrew J., Agyei, Kwame T., Ovens, Jeffrey S., Brusso, Jaclyn L., Lessard, Benoît H.“…Preliminary organic thin film transistors (OTFTs) were fabricated and characterized using the 9,10-anthracene-based molecules as the semiconductor layer. …”
Publicado 2019
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4190“…Then, electronic and optoelectronic applications of such assembly films are presented, such as thin-film transistors, transparent conductive films, mechanical and chemical sensors, photodetectors and optoelectronic devices, as well as flexible and printed electronics. …”
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4191por Kim, Kyunghun, Kim, Se Hyun, Cheon, Hyungjin, Tang, Xiaowu, Oh, Jeong Hyun, Jhon, Heesauk, Jeon, Jongwook, Kim, Yun-Hi, An, Tae Kyu“…We report the employment of an electrohydrodynamic-jet (EHD)-printed diketopyrrolopyrrole-based copolymer (P-29-DPPDTSE) as the active layer of fabricated organic field-effect transistors (OFETs) and circuits. The device produced at optimal conditions showed a field-effect mobility value of 0.45 cm(2)/(Vs). …”
Publicado 2019
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4192por Iemmo, Laura, Urban, Francesca, Giubileo, Filippo, Passacantando, Maurizio, Di Bartolomeo, Antonio“…We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS(2), used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. …”
Publicado 2020
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4193por Belyaev, Dmitry, Schütt, Julian, Ibarlucea, Bergoi, Rim, Taiuk, Baraban, Larysa, Cuniberti, Gianaurelio“…Here, we present a miniaturized lab-on-a-chip detecting system for an all-electric and label-free analysis of the emulsion droplets incorporating the nanoscopic silicon nanowires-based field-effect transistors (FETs). We specifically focus on the analysis of β-galactosidase e.g., activity, which is an important enzyme of the glycolysis metabolic pathway. …”
Publicado 2020
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4194por Kim, Min Je, Lee, Myeongjae, Min, Honggi, Kim, Seunghan, Yang, Jeehye, Kweon, Hyukmin, Lee, Wooseop, Kim, Do Hwan, Choi, Jong-Ho, Ryu, Du Yeol, Kang, Moon Sung, Kim, BongSoo, Cho, Jeong Ho“…Here, we report the fabrication of highly integrated arrays of polymer thin-film transistors and logic gates entirely through a series of solution processes. …”
Publicado 2020
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4195“…Then, some nanoscale electronic and optoelectronic devices built on 1-D nanostructures are presented, including field-effect transistors (FETs), p-n diodes, ultraviolet (UV) detectors, light-emitting diodes (LEDs), nanolasers, integrated nanodevices, single nanowire solar cells, chemical sensors, biosensors, and nanogenerators. …”
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4196“…Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. …”
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4197“…This study investigated the effects of a thin aluminum oxynitride (AlO(x)N(y)) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. …”
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4198por Jastrzebska-Perfect, Patricia, Spyropoulos, George D., Cea, Claudia, Zhao, Zifang, Rauhala, Onni J., Viswanathan, Ashwin, Sheth, Sameer A., Gelinas, Jennifer N., Khodagholy, Dion“…We created MCP-based high-performance anisotropic films, independently addressable transistors, resistors, and diodes that are pattern free, scalable, and biocompatible. …”
Publicado 2020
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4199“…Among the patterning technologies for organic thin-film transistors (OTFTs), the fabrication of OTFT electrodes using polymer templates has attracted much attention. …”
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4200“…Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. …”
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