Materias dentro de su búsqueda.
Mostrando 4,201 - 4,220 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.17s Limitar resultados
  1. 4201
    “…We report the performance improvement of low-temperature coplanar indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs) with a maximum process temperature of 230 °C. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO(2) Buffer Layer
  2. 4202
    “…In this article, we report the development of graphene-based field-effect transistors (GFETs) functionalized with anti-ferritin antibodies through a linker molecule (1-pyrenebutanoic acid, succinimidyl ester), to facilitate specific conjugation with ferritin antigen. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Graphene-Based Biosensor for Early Detection of Iron Deficiency
  3. 4203
    “…Electronic inks, including conductors, semiconductors, and dielectrics, are drawn on-demand in a freeform manner to develop devices, such as transistors, strain sensors, temperature sensors, heaters, skin hydration sensors, and electrophysiological sensors. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Ultra-conformal drawn-on-skin electronics for multifunctional motion artifact-free sensing and point-of-care treatment
  4. 4204
    “…[Image: see text] Molecular transistors, electromagnetic waveguides, plasmonic devices, and novel generations of nanofluidic channels comprise precisely separated gaps of nanometric and subnanometric spacing. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Supramolecular Multilayered Templates for Fabricating Nanometer-Precise Spacings: Implications for the Next-Generation of Devices Integrating Nanogap/Nanochannel Components
  5. 4205
    “…For years, this property has been the missing element for incorporating graphene into next-generation field effect transistors. In this work, we grow high-quality armchair graphene nanoribbons on the sidewalls of 6H-SiC mesa structures. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    One-dimensional confinement and width-dependent bandgap formation in epitaxial graphene nanoribbons
  6. 4206
    “…We find that the SCO mechanism endures encapsulation and positioning of individual heterostructures in nanoscale transistors. The SCO switch in the guest molecules triggers a large conductance bistability through the host SWCNT. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Spin-state-dependent electrical conductivity in single-walled carbon nanotubes encapsulating spin-crossover molecules
  7. 4207
    “…Graphene with its unique electrical properties is a promising candidate for carbon-based biosensors such as microelectrodes and field effect transistors. Recently, graphene biosensors were successfully used for extracellular recording of action potentials in electrogenic cells; however, intracellular recordings remain beyond their current capabilities because of the lack of an efficient cell poration method. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Intracellular action potential recordings from cardiomyocytes by ultrafast pulsed laser irradiation of fuzzy graphene microelectrodes
  8. 4208
    “…High-mobility Ge nMOSFETs with ZrO(2) gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O(3)) treatment, O(3) post-treatment and without O(3) treatment. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
  9. 4209
    por Shetti, Vijayendra S
    Publicado 2021
    “…These properties make azulene-containing polymers an intriguing entity in the field of functional polymers, especially for organic electronic applications like organic field-effect transistors (OFET) and photovoltaic (PV) cells. Since azulene has a fused five and seven-membered ring structure, it can be incorporated onto the polymer backbone through either of these rings or by involving both the rings. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Chemical syntheses and salient features of azulene-containing homo- and copolymers
  10. 4210
    “…[Image: see text] N-heteropolycyclic aromatic compounds are promising organic electron-transporting semiconductors for applications in field-effect transistors. Here, we investigated the electronic properties of 1,3,8,10-tetraazaperopyrene derivatives adsorbed on Au(111) using a complementary experimental approach, namely, scanning tunneling spectroscopy and two-photon photoemission combined with state-of-the-art density functional theory. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Electronic Properties of Tetraazaperopyrene Derivatives on Au(111): Energy-Level Alignment and Interfacial Band Formation
  11. 4211
    por Zou, Jianping, Zhang, Qing
    Publicado 2021
    “…Sub‐10 nm SWCNT‐field effect transistors (FETs) have been realized with several performances exceeding those of Si‐based FETs at the same feature size. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Advances and Frontiers in Single‐Walled Carbon Nanotube Electronics
  12. 4212
    “…AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO(2) have been investigated. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO(2) Gate Dielectric
  13. 4213
    “…In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
  14. 4214
    “…Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been demonstrated. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Charge Transport Characteristics of Molecular Electronic Junctions Studied by Transition Voltage Spectroscopy
  15. 4215
    “…The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices
  16. 4216
    “…The performance enhancements of TMDSC field-effect transistors are well reflected by the low contact resistance (down to 90 Ωµm in MoS(2), towards the quantum limit), the high field-effect mobility (up to 358,000 cm(2)V(−1)s(−1) in WSe(2)), and the prominent transport characteristics at cryogenic temperatures. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Bridging the gap between atomically thin semiconductors and metal leads
  17. 4217
    “…Low-temperature electrical transport measurements with field-effect transistors with these AfFtnAA/BLG surfaces show hysteresis with two Dirac peaks. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Biomolecular control over local gating in bilayer graphene induced by ferritin
  18. 4218
    “…In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation
  19. 4219
    “…For high-performance nanoscale Ge-based transistors, one important point of focus is interfacial germanium oxide (GeO(x)), which is thermodynamically unstable and easily desorbed. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Suppression of GeO(x) interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
  20. 4220
    “…While the siloxane containing polymers exhibit a higher hole mobility in field-effect transistors, their performance in solar cells is less than the polymer with only alkyl sides chains. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    The influence of siloxane side-chains on the photovoltaic performance of a conjugated polymer
Herramientas de búsqueda: RSS