“…Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety of electronic and opto-valleytronic devices, and even to superconductivity. …”
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“…Here, we systematically characterize the effects of the spin-coating time on the microstructure evolution during semiconducting polymer solidification in an effort to establish the relationship between this parameter and the performances of the resulting polymer field-effect transistors (FETs). We found that a short spin-coating time of a few seconds dramatically improve the morphology and molecular order in a conjugated polymer thin film because the π-π stacking structures formed by the polymer molecules grow slowly and with a greater degree of order due to the residual solvent present in the wet film. …”
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“…Consequently, one can switch the topological edge channels on and off by purely electrical means, making the system a promising platform for constructing topological field effect transistors.…”
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“…The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. …”
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“…The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO(2) growth substrates, with performance matching state-of-the-art epitaxially grown devices. …”
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“…Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS(2) have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. …”
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“…These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. …”
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“…Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (10(5)) and field-effect mobilities (17 cm(2)/Vs). …”
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“…A significant, practical challenge, which arises in developing computationally efficient physical models for use in computer simulations of microelectronic and optoelectronic devices (for example, transistors in digital cellular phones and lasers in optical networks, respectively), is to represent vast amounts of numerical data for transport properties in two or more dimensions in terms of closed form analytic expressions. …”
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“…We report organic nanowire (ONW) synaptic transistors (STs) that emulate the important working principles of a biological synapse. …”
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“…The incorporation of carbon nanotube transistors, gas sensors, temperature sensors, and memory devices that are capable of self‐wrapping onto any irregular shaped‐objects without degradations in device performance is demonstrated.…”
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“…Furthermore, we demonstrate that strain is very useful to modulate the DOS near the valence band, resulting in the reduction of the critical hole density to ~10(13) cm(−2) when the strain reaches 4% (6%) in SnS(2) (SnSe(2)), which can be realized in common field effect transistors. Moreover, the phonon dispersion calculations for the strained SnX(2) monolayers indicate that they can keep the dynamical stability under the hole doping. …”
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“…The guided CdSe nanowires were found to have a wurtzite single-crystal structure. Field-effect transistors and photodetectors were fabricated to examine the nanowire electronic and optoelectronic properties, respectively. …”
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“…Biosensors based on nanowire field-effect transistors have been developed, but reliable and cost-effective fabrication remains a challenge. …”
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“…The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.…”
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“…Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. …”
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“…The fibres were subsequently incorporated as the active layer in field-effect transistors. The resulting charge carrier mobility strongly depends on both the degree of polymerization of the core-forming block and the fibre length, and is independent of corona composition. …”
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“…By engineering the energy levels of the donor molecules and the PbS QDs through the use of different cross-linking ligands, we are able to control the characteristics of PbS field-effect transistors (FETs) from ambipolar to strongly n-type. …”
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“…This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. …”
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“…The concept of the edge spin waves allows to design a broad of logic devices such as splitters, interferometers, or edge spin wave transistors with unprecedented characteristics and a potentially strong impact on information technologies.…”
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