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  1. 4301
    “…Heterojunctions between two crystalline semiconductor layers or regions can always lead to engineering the electronic energy bands in various devices, including transistors, solar cells, lasers, and organic electronic devices. …”
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    Acoustic extraordinary transmission manipulation based on proximity effects of heterojunctions
  2. 4302
    “…In addition, the nanowire-based transistors displayed air stable electron mobility reaching to 0.15 cm(2) V(−1) s(−1), attributing to effective in situ reassembly. …”
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    Investigation of Self-Assembly and Charge-Transport Property of One-dimensional PDI(8)-CN(2) Nanowires by Solvent-Vapor Annealing
  3. 4303
    “…We demonstrate several flexible and stretchable electronics devices, such as self-healing conductors, transient transistors, and electronic skins for robots based on the GHEC elastomeric gel to illustrate its multiple functions.…”
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    Stretchable, self-healing, transient macromolecular elastomeric gel for wearable electronics
  4. 4304
    “…We further develop photonic ion switches, photonic ion diodes, and photonic ion transistors as the fundamental elements for active ion sieving and artificial photosynthesis on synthetic nanofluidic circuits.…”
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    Photo-induced ultrafast active ion transport through graphene oxide membranes
  5. 4305
    “…In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. …”
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    Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
  6. 4306
    “…This article evaluates recent research and advancements in the applications of photonic devices in medical radiation detection primarily focusing on four types; photodiodes – including light-emitting diodes (LEDs), phototransistors—including metal oxide semiconductor field effect transistors (MOSFETs), photovoltaic sensors/solar cells, and charge coupled devices/charge metal oxide semiconductors (CCD/CMOS) cameras. …”
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    A Review: Photonic Devices Used for Dosimetry in Medical Radiation
  7. 4307
    “…Compared to β(1), the β(2) polymorph exhibits a lower optical band gap, an enhanced photoluminescence, a reduced π-stacking distance, a higher hole mobility in field-effect transistors and improved photocurrent generation in polymer solar cells. …”
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    Impact of polymorphism on the optoelectronic properties of a low-bandgap semiconducting polymer
  8. 4308
    “…Prototype graphene-based vertical tunneling transistors can achieve an extraordinary control over current density utilizing gate voltages. …”
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    Multicontrol Over Graphene–Molecule Hetereojunctions
  9. 4309
    “…In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. …”
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    Investigation of 1200 V SiC MOSFETs’ Surge Reliability
  10. 4310
    “…Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. …”
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    Unraveling structural and compositional information in 3D FinFET electronic devices
  11. 4311
    “…In this study, 3D self-rolled biosensor arrays (3D-SR-BAs) of either active field-effect transistors or passive microelectrodes were implemented to interface human cardiac spheroids in 3D. …”
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    Organ-on-e-chip: Three-dimensional self-rolled biosensor array for electrical interrogations of human electrogenic spheroids
  12. 4312
    “…The tungsten diselenide (WSe(2)) has attracted considerable interest owing to their versatile applications, such as p-n junctions, transistors, fiber lasers, spintronics, and conversion of solar energy into electricity. …”
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    All-Optical Tuning of Light in WSe(2)-Coated Microfiber
  13. 4313
    “…Fabrication of organic thin-film transistors (OTFTs) via high throughput solution process routes have attracted extensive attention. …”
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    One-Step Coating Processed Phototransistors Enabled by Phase Separation of Semiconductor and Dielectric Blend Film
  14. 4314
    “…Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS(2)/WSe(2) field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. …”
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    Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
  15. 4315
    “…Here, we report on carrier lifetimes in graphene/hBN Zener-Klein transistors of ~30 ps for photoexcited carriers at low density and energy, using mid-infrared photoconductivity measurements. …”
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    Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
  16. 4316
    “…Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. …”
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    A FinFET with one atomic layer channel
  17. 4317
    “…By using a novel two-dimensional growth mode benefiting from our high-temperature AlN buffer technology, which is different from the classic two-step growth approach, our high-electron-mobility transistors (HEMTs) demonstrate an extremely high breakdown field of 2.5 MV/cm approaching the theoretical limit of GaN and an extremely low off-state buffer leakage of 1 nA/mm at a bias of up to 1000 V. …”
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    Exploring an Approach toward the Intrinsic Limits of GaN Electronics
  18. 4318
    “…However, the high output impedance and switching loss largely reduces its power efficiency, due to imperfect topology and transistors. Herein, we propose a fractal-design based switched-capacitor-convertors with characteristics including high conversion efficiency, minimum output impedance, and electrostatic voltage applicability. …”
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    Switched-capacitor-convertors based on fractal design for output power management of triboelectric nanogenerator
  19. 4319
    “…The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. …”
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    Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
  20. 4320
    “…The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. …”
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    A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
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