Mostrando 4,321 - 4,340 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.29s Limitar resultados
  1. 4321
    “…The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 10(4). …”
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  2. 4322
    “…A supply voltage as low as 0.8V and MOS transistors operating in the sub-threshold region are exploited to achieve a power consumption as low as 170nW, when driving a 1pF load capacitance. …”
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  3. 4323
    “…We leveraged dual-gate piezoelectric zinc oxide (ZnO) thin-film transistors (TFTs) fabricated on flexible substrates to record normal and shear forces with high sensitivity over a broad range of forces. …”
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  4. 4324
    “…The applications of conductive polymers for organic light emitting diodes (OLEDs), organic field effect transistors (OFETs), and organic photovoltaics (OPVs) are explained thoroughly. …”
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  5. 4325
    “…We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. …”
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  6. 4326
    “…These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. …”
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  7. 4327
    “…Organic conjugated polymers demonstrate great potential in transistors, solar cells and light-emitting diodes, whose performances are fundamentally governed by charge transport. …”
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  8. 4328
  9. 4329
    “…Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. …”
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  10. 4330
    “…Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. …”
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  11. 4331
    “…In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. …”
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  12. 4332
  13. 4333
    “…To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. …”
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  14. 4334
    “…We demonstrate a number of different heterostructure devices including micro supercapacitors and organic electrochemical transistors and also demonstrate the use of acidified PEDOT:PSS microstructures in cell cultures to enable bioelectronics.…”
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  15. 4335
    “…In this study, we propose an integrated polarization-sensitive amplification system by introducing a nanowire polarized photodetector and organic semiconductor transistors, which can boost the polarization sensitivity from 1.24 to 375. …”
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  16. 4336
  17. 4337
    “…Here, for the first time, a single‐molecule electrical monitoring technique is utilized to realize label‐free detection of the DBP–DNA interaction process based on high‐gain silicon nanowire field‐effect transistors (SiNW FETs). The whole binding process of WRKY domain and DNA has been visualized with high sensitivity and single‐base resolution. …”
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  18. 4338
    “…Their outstanding electrical properties have boosted their use in different light-driven applications (photocatalysis, organic thin film transistors, photoelectrodes, organic photovoltaics, etc.), attracting much attention in the research community. …”
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  19. 4339
    “…A new low-frame-rate active-matrix organic light-emitting diode (AMOLED) pixel circuit with low-temperature poly-Si and oxide (LTPO) thin-film transistors (TFTs) for portable displays with high pixel density is reported. …”
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  20. 4340
    “…[Image: see text] Thin vertical nanowires based on III–V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. …”
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