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  1. 4341
    por Guo, Jing, Liu, Kai
    Publicado 2021
    “…With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. …”
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    Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
  2. 4342
    “…The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. …”
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    Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT
  3. 4343
    “…The described approach expands the range of material combinations for high-performance transistors, tandem solar cells, and three-dimensional integrations.…”
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    Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium
  4. 4344
    “…Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light-emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. …”
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    Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor
  5. 4345
    “…Furthermore, the realization of 2D heterojunction-based novel devices, including excitonic and valleytronic transistors, demands more extensive research efforts for real-world applications. …”
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    Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices
  6. 4346
    “…While the so-called precursor approach has already been tried for various organic electronic devices such as transistors and solar cells, understanding of the conversion process in the film lags far behind. …”
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    Stereoisomer-dependent conversion of dinaphthothienothiophene precursor films
  7. 4347
    “…An array of graphene-based field-effect transistors in combination with commercial humidity and temperature sensors are used to relay information by wireless communication about the presence of airborne chemicals. …”
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    Drone-Mountable Gas Sensing Platform Using Graphene Chemiresistors for Remote In-Field Monitoring
  8. 4348
    “…[Image: see text] Two-dimensional (2D) materials have got extensive attention for multifunctional device applications in advanced nanoelectronics and optoelectronics, such as field-effect transistors, photodiodes, and solar cells. In our work, we fabricated MoTe(2)–MoS(2) van der Waals heterostructure photodetectors with great performance using the mechanical exfoliation method and restack technique. …”
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    High-Performance Photodetectors Based on MoTe(2)–MoS(2) van der Waals Heterostructures
  9. 4349
    “…In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al(2)O(3) dielectric and a passivation layer were characterized. …”
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    Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate
  10. 4350
    “…Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. …”
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    Interfacial ferroelectricity in marginally twisted 2D semiconductors
  11. 4351
    “…To understand the thermal failure mechanisms of electronic devices, it is essential to measure the temperature and characterize the thermal properties of individual nanometer-scale transistors in electronic devices. Previously, scanning thermal microscopy (SThM) has been used to measure the local temperature with nanometer-scale spatial resolutions using a probe with a built-in temperature sensor. …”
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    AFM-thermoreflectance for simultaneous measurements of the topography and temperature
  12. 4352
    “…The results show the great potential of GWMHs for high-power field-effect transistors (FETs) and next-generation logic electronic devices.…”
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    Controlling Tunneling Characteristics via Bias Voltage in Bilayer Graphene/WS(2)/Metal Heterojunctions
  13. 4353
    “…Two populations of nanoribbons are compared in field-effect transistors (FETs), with off-current differing by 150 times because of the nanoribbons’ different widths.…”
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    Graphene nanoribbons initiated from molecularly derived seeds
  14. 4354
    “…In relation to conventional vacuum-based processing techniques inkjet printing enables upscaling fabrication of basic electronic elements, such as transistors and diodes. We present the fully inkjet printed flexible electronic circuits, including organic voltage inverter which can work as a NOT logic gate. …”
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    Fully inkjet-printed flexible organic voltage inverters as a basic component in digital NOT gates
  15. 4355
    “…This has been spurred by advances in flexible sensors, transistors, energy storage, and harvesting devices to replace the traditional, bulky, and rigid electronic devices. …”
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    Recent progress in electrospun nanomaterials for wearables
  16. 4356
    “…In recent years, supramolecular cocrystals containing organic donors and acceptors have been explored as active components in organic field-effect transistors (FETs). Herein, we report the synthesis of novel single-cocrystal nanoribbons with ambipolar charge transport characteristics from C(70) and 5,10,15,20-tetrakis(3,5-dimethoxyphenyl)porphyrin (3,5-TPP) in a 3 : 2 ratio. …”
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    Fullerene C(70)/porphyrin hybrid nanoarchitectures: single-cocrystal nanoribbons with ambipolar charge transport properties
  17. 4357
    “…Here, strain modulated spin dynamics in bilayer MoS(2) field‐effect transistors (FETs) fabricated on crested substrates are demonstrated. …”
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    Modulation of Spin Dynamics in 2D Transition‐Metal Dichalcogenide via Strain‐Driven Symmetry Breaking
  18. 4358
    “…We have applied this new molecule in organic field effect transistors. The material exhibited a p-type mobility up to 1.33 × 10(−4) cm(2) V(−1) s(−1).…”
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    Introducing a new 7-ring fused diindenone-dithieno[3,2-b:2',3'-d]thiophene unit as a promising component for organic semiconductor materials
  19. 4359
    “…The detailed analysis of the properties demonstrated that the SnO monolayer is a promising candidate for future optoelectronics and spintronics devices, especially thin film transistors.…”
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    Structural and Electronic Properties of SnO Downscaled to Monolayer
  20. 4360
    “…The products of these reactions are important building blocks in many areas of organic electronics including organic light‐emitting diodes (OLEDs), organic field‐effect transistors (OFETs) and organic photovoltaic cells (OPVCs). …”
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    Solvent‐Free Synthesis of Core‐Functionalised Naphthalene Diimides by Using a Vibratory Ball Mill: Suzuki, Sonogashira and Buchwald–Hartwig Reactions
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