“…In combination with electrical measurements of SWCNT network field-effect transistors, these data enable us to distinguish between contributions of intra-nanotube band transport, sp(3) defect scattering and inter-nanotube carrier hopping to the overall charge transport properties of nanotube networks.…”
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“…In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH(3) flow during the deposition of SiNx can significantly affect the performances of metal–insulator–semiconductor (MIS) HEMTs. …”
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“…The results of the simulation reveal that threshold voltage variations in driving thin-film transistors of ±0.33 V can be well sensed and compensated with a 1.8% average shift of OLED currents in high-frame-rate operation (120 Hz), while the maximum variation in OLED currents within all gray levels is only 3.56 nA in low-frame-rate operation (1 Hz). …”
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“…Poly(3-hexylthiophene) (P3HT) is a typical conducting polymer widely used in organic thin-film transistors, polymer solar cells, etc., due to good processability and remarkable charging carrier and hole mobility. …”
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“…Importantly, the growing potential of halide perovskite NCs for advancing optoelectronic applications and beyond including light-emitting devices (LEDs), solar cells, scintillators and X-ray imaging, lasers, thin-film transistors (TFTs), artificial synapses, and light communication will be extensively discussed, along with prospecting their development in the future.…”
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“…Here, we present scaled carbon nanotube-based thin film transistors (CNT-TFTs) with channel lengths down to 450 nm on 2-μm-thick parylene substrates, achieving state-of-the-art performances of high on-state current (187.6 μA μm(−1)) and large transconductance (123.3 μS μm(−1)). …”
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“…In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. …”
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“…D-A conjugated polymers are key materials for organic solar cells and organic thin-film transistors, and their film structure is one of the most important factors in determining device performance. …”
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“…Even though such vacancy pairs only represent ~10% of the total defect concentration, they can have a substantial influence on the off currents and switching slopes of field-effect transistors based on 2D semiconductors. Our technique, which can quantify the energy states of different defects and their interactions, allows rapid and nondestructive electrical characterization of defect states important for the defect engineering of 2D semiconductors.…”
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“…Herein, we use a novel method to show that the EDL effect, and its suppression at solid electrolyte/electronic material interfaces, can be characterized on the basis of the electric conduction characteristics of hydrogenated diamond(H-diamond)-based EDL transistors (EDLTs). Whereas H-diamond-based EDLT with a Li-Si-Zr-O Li(+) solid electrolyte showed EDL-induced hole density modulation over a range of up to three orders of magnitude, EDLT with a Li-La-Ti-O (LLTO) Li(+) solid electrolyte showed negligible enhancement, which indicates strong suppression of the EDL effect. …”
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“…Here, we present a reliable in-situ single-PNPase-molecule dynamic electrical detector based on silicon nanowire field-effect transistors with ultra-high temporal resolution. These devices are capable of realizing real-time and label-free monitoring of RNA analog degradation with single-base resolution, including RNA analog binding, single-nucleotide hydrolysis, and single-base movement. …”
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“…With this technique, various metals could be vdW integrated as the contact of 2D transistors, including Ag, Al, Ti, Cr, Ni, Cu, Co, Au, Pd. …”
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“…Recently, several amorphous conjugated polymers with planar backbone conformations and low energetic disorder have been investigated for applications in field-effect transistors and thermoelectrics. However, there is a lack of strategy to finely tune the interchain π-π contacts of these polymers that severely restricts the energetic disorder of interchain charge transport. …”
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“…Its miniaturization can increase the speed and the possibilities of combinatorial throughput for their manipulation, similar to the way that the miniaturization of transistors allows logical operations in microelectronics with a high throughput. …”
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“…Each pixel has around 1600 transistors and the analog static power consumption is below 15 mu W in the charge summing mode and 9 mu W in the single pixel mode. …”
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“…Provides a complete roadmap for organic and printed electronics research and development for the next several years; Includes an overview of the printing processes for organic electronics, along with state of the art applications, such as solar cells; Discusses light emitting diode (OLED) displays, including the different types of OLED pixels in commercial use and in development, and gives insight into the most relevant display and backplane issues; Provides an overview of OLED for lighting applications, including a description of the materials, physics, architecture and benchmarking of OLED lighting devices, as well as fabrication methods, reliability and commercial applications; Reviews the state-of-the-art of chemical sensors based on organic electronic devices; Offers a vision for the future of organic electronics based on organic thin film transistors (OTFTs), including applications such as organic RFIDs and smart objects enabled by the integration of OTFTs with sensors and actuators.…”
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“…Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.…”
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“…ITkPix consists of more than one billion transistors with high memory triplication ratio in order to cope with the high particle density at the heart of ATLAS. …”
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“…The use of 0.5 µm and 0.25 µm CMOS and enclosed geometry for the transistors in the pixel readout chips resulted in a radiation hardness of ~ 2 Mrad and >30 Mrad, respectively.…”
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“…This effective technique consists in the systematic use of enclosed (edgeless) NMOS transistors and guardrings, and relies in the natural total dose hardness of the thin gate oxide of deep submicron processes. …”
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