“…This miniaturization leads to significant overheating of various electronic components, such as power transistors, processors, and power diodes, leading to a reduction in their lifespan and reliability. …”
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“…Here, we systematically investigated the effect of the chiral structures of SWCNTs on their electrical transport properties by measuring the performance of thin-film transistors constructed by eleven distinct (n, m) single-chirality SWCNT films. …”
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“…The relationship between the drain-to-body potential (V(db)) of GIDL transistors and the increasing number of layers was studied to explain the reason for the self-adaption of the GIDL erase. …”
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“…We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO(2) materials and contribute to advanced electronic transistors and optoelectronic devices.…”
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“…In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. …”
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“…Here, we construct a single-molecule electrical nanocircuit based on silicon nanowire field-effect transistors (SiNW-FETs) and functionalize it with an individual disordered c-Myc bHLH-LZ domain to enable label-free, in situ, and long-term measurements at the single-molecule level. …”
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“…For devices that benefit from balanced transport, such as organic light-emitting diodes, organic solar cells and organic ambipolar transistors, the energy levels of the organic semiconductors are ideally situated within an energetic window with a width of 2.5 eV where charge trapping is strongly suppressed. …”
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“…In contrast to the isotropic behavior of pristine MoS(2), a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP(2)-gated MoS(2) transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. …”
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“…Simulation results reveal that threshold voltage variations of ±0.33 V in the driving thin-film transistors can be well sensed and compensated while the maximum OLED current shift is 4.25%. …”
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“…Here, we present a detailed characterization of the chemical and electronic properties of the precursor and the obtained conjugated polymers, showing how it is possible to harvest their characteristics for potential applications such as electrochromic surfaces and organic field-effect transistors.…”
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“…This paper comprehensively analyses 2D TMD alloy materials, covering their growth, preparation, optoelectronic properties, and various applications including hydrogen evolution reaction catalysis, field-effect transistors, lithium-sulphur battery catalysts, and lasers. …”
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“…We built new hybrid devices consisting of chemical vapor deposition (CVD) grown carbon nanotube (CNT) transistors, decorated with TbPc(2) (Pc = phthalocyanine) rare-earth based single-molecule magnets (SMMs). …”
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“…The high-quality interface properties of our “designer” heterostructure are evidenced by the low interface trap density of as low as 2–4 × 10(11) cm(−2) eV(−1) and superior transfer characteristics measured for Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Thanks to the very thin interfacial SiO(2) layer, carrier storage within the Ge QDs with good memory endurance was established under relatively low-voltage programming/erasing conditions. …”
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“…Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. …”
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“…As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. …”
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“…Moreover, these photochemically structured cellulose thin films are successfully implemented as dielectric layers in prototype organic thin film transistors. Such photopatternable dielectric layers are crucial for the realization of electrical interconnects for demanding organic device architectures. …”
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“…The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. …”
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“…In the work, silicalite particles were used for the surface modification of pH-sensitive field-effect transistors (pH-FETs) with the purpose of developing new creatinine-sensitive biosensor. …”
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“…To prove the efficiency of the path tracking method, several cases study with bipolar (BJT) and CMOS transistors are provided. Simulation results show that the proposed approach can be up to twelve times faster than the original path tracking method and also helps to avoid several reversion cases that appears when original hyperspheres path tracking scheme was employed.…”
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“…Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. …”
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