“…Here, we review the operation of single-enzyme transistors made using single-walled carbon nanotubes. …”
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“…Printed organic thin-film transistors (OTFTs) are well suited for low-cost electronic applications, such as radio frequency identification (RFID) tags and sensors. …”
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“…The system is comprised of compact and low-power-consumption electronic equipment and an array of microsensors formed by six ion-selective field effect transistors sensitive to pH, Na(+), K(+), Ca(2+), Cl(−), and CO(3)(2−), one conductivity sensor, one redox potential sensor, and two amperometric gold microelectrodes. …”
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“…Using lithographically defined nanowells, we achieve single-point covalent chemistry on hundreds of individual carbon nanotube transistors, providing robust statistics and unprecedented spatial resolution in adduct position. …”
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“…Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. …”
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“…This substitution results in an increased concentration of charge carriers (measured in organic electrochemical transistors) along with an enhancement of the mean size of crystalline domains, highlighted by small and wide angle X-ray scattering (SAXS/WAXS), which explains the 80% increase of electrical conductivity.…”
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“…Memory functionality and addressability are demonstrated in ferro-electrochromic display pixels and ferro-electrochemical transistors.…”
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“…A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll‐to‐roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all‐CNT thin‐film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on–off current ratio of more than 10(5), a carrier mobility of 33 cm(2) V(−1) s(−1), and a small hysteresis. …”
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“…Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. …”
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“…P(PDI-DTT) nanotubes exhibited electron mobility of 0.02 cm(2) V(–1) s(–1) in field-effect transistors under ambient condition. Light-emitting nanostructures were successfully fabricated by incorporating tetraphenylethylene into polymer nanotubes.…”
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“…This polymer-silica hybrid amplifier is promising for the on-chip loss compensation of the 3D photonic integrated circuits and all optical transistors.…”
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“…Our work could provide a new route for high-yield and direct synthesis of SWCNTs with narrow chirality distribution and offer potential applications in electronics, such as touch sensors or transistors.…”
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“…The novel stretchable MEA is carefully designed using state-of-the-art engineering techniques by combining extraordinarily high gain organic electrochemical transistors processed on microgrid substrates and a coating of poly(3-methoxypropyl acrylate), which exhibits significant antithrombotic properties while maintaining excellent ionic conductivity.…”
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“…This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. …”
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“…Here, we suggest the use for silicon-germanium (Si-Ge) films grown plasma-enhanced chemical vapour deposition (PECVD) as photo-blocking layers in the a-IGZO thin film transistors (TFTs). The charge mobility and threshold voltage (V(th)) of the TFTs depend on the thickness of the Si-Ge films and dielectric buffer layers (SiN(X)), which were carefully optimized to be ~200 nm and ~300 nm, respectively. …”
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“…The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.…”
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“…Using these films, we fabricated two types of field-effect transistors (FETs) and compared them with those using non-heated TPCO films which provide aligned pleats structures. …”
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“…Additionally, their optical and compositional properties are investigated by photoluminescence and X-ray photoelectron spectroscopy, and their electrical properties are evaluated using bottom-gate field-effect transistors. The resultant pristine MoSe(2) thin film exhibited low overpotential of 88 mV (at 10 mA·cm(–2)) and a noticeably high exchange current density of 0.845 mA·cm(–2) with excellent stability, which is superior to most of other reported MoS(2) or MoSe(2)-based catalysts, even without any other strategies such as doping, phase transformation, and integration with other materials.…”
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“…The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. …”
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“…Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. …”
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