“…Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. …”
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“…When the film was used as a conductive layer in organic field-effect transistors (OFET), it exhibited hole and electron conduction with hole (µ(h)) and electron (µ(e)) mobilities in the order of 10(−8) and 10(−6) cm(2)/Vs, respectively. …”
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“…Doping is central for solid-state devices from transistors to thermoelectric energy converters. The interaction between electrons and dopants plays a pivotal role in carrier transport. …”
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“…Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. …”
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“…The unique structural properties of these materials, namely good direct bandgap, low density of defects, large absorption coefficient, high sensitivity, long charge carrier lifetime, good selectivity, acceptable stability at room temperature, and good diffusion length have prompted researchers to explore their potential applications in photovoltaics, light-emitting devices, transistors, sensors, and other areas. Perovskite-based devices have shown very excellent sensing performances to numerous chemical and biological compounds in both solid and liquid mediums. …”
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“…All these devices have chips inside them fabricated using diodes, transistors, logic gates, and ICs. The patterning of the substrate which is used for the further development of these devices is done with the help of a technique known as lithography. …”
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“…More interestingly, we also demonstrate that the hyperbolic properties in the near-infrared range, including the hyperbolic windows, figure of merit, and propagation directions of plasmon beams, can be effectively modulated by carrier doping at the order of 10(13) cm(−2), which even can be accessed by solid-gated field effect transistors. Thus, it is anticipated that monolayer NaW(2)O(2)Br(6) has a great potential in constructing field programmable polariton nanodevices for emerging and diverse photonic applications.…”
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“…Finally, the applications of separated SWCNTs, such as field-effect transistors (FETs), sensors, light emitters and photodetectors, transparent electrodes, photovoltaics (solar cells), batteries, bioimaging, and other applications, are presented.…”
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“…Organic thin-film transistors (OTFTs) are promising building blocks of flexible printable electronic devices. …”
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“…Transport measurements on MoS(2) nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS(2) nanoscrolls. …”
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“…Organic thin-film transistors using small-molecule semiconductor materials such as 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-P) have been recently studied for the production of flexible and printed electronic devices. …”
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“…In this work, we successfully demonstrated In(0.53)Ga(0.47)As/InAs/In(0.53)Ga(0.47)As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such as V(T) = −0.13 V, g(m,max) = 949 mS/mm, subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering (DIBL) = 89 mV/V, and I(on)/I(off) ratio = 9.8 × 10(3) at a drain-source voltage (V(DS)) = 0.5 V. …”
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“…In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. …”
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“…Here, we investigate 3R-stacked transition-metal dichalcogenides as a possible option for high-performance atomically thin field-effect transistors (FETs). We report that the effective mobility of 3R bilayer WS(2) (WSe(2)) is 65% (50%) higher than that of 2H WS(2) (WSe(2)). …”
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“…Therefore new more radiation hard technologies have been studied: SiGe bipolar, Si CMOS FET and GaAs FET transistors have been irradiated with neutrons up to an integrated fluence of 2.2*10**16 n/cm**2. …”
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“…Therefore new more radiation hard technologies have been studied: SiGe bipolar, Si CMOS FET and GaAs FET transistors have been irradiated with neutrons up to an integrated fluence of 2.2 x 10**16 n/cm**2. …”
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“…The third and final part of the Handbook contains chapters on spintronic device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics, and thermal effects in spintronics.   …”
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“…We have developed a high-temperature superconducting (HTS) flux pump using high-power metal-oxide-semiconductor field-effect transistors (MOSFETs) for switching. For its primary coil, two commercial transformers are utilized, each consisting of two copper coils wound on a single iron core, which enables changing the load current over primary current ratio (101 or 194) between the primary and secondary coils. …”
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“…The individual pixel is comprised of only 3 MOS transistors and a photodiode collecting the charge created in a thin undepleted epitaxial layer. …”
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“…The developed device may be used as a prototype for designing a quantum sensor that will serve as the foundation for cutting-edge sensor technologies, as well as be applied to research into atomic-scale junctions, single-atom transistors, and any relative subjects.…”
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