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  1. 4621
    por Poljak, Mirko, Matić, Mislav
    Publicado 2021
    “…We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using advanced theoretical and computational approaches. …”
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  2. 4622
    “…Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. …”
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  3. 4623
    por Kim, Sunwoo, Kim, Woo-Jae
    Publicado 2022
    “…Carbon nanotubes (CNTs), having either metallic or semiconducting properties depending on their chirality, are advanced materials that can be used for different devices and materials (e.g., fuel cells, transistors, solar cells, reinforced materials, and medical materials) due to their excellent electrical conductivity, mechanical strength, and thermal conductivity. …”
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  4. 4624
    por Suzuki, Yoshiharu, Asakawa, Naoki
    Publicado 2022
    “…SR has been observed in nonlinear response systems, such as biological and artificial systems, and this review will focus mainly on examples of previous studies of mathematical models and experimental realization of SR using poly(hexylthiophene)-based organic field-effect transistors (OFETs). This phenomenon may contribute to signal processing with low energy consumption. …”
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  5. 4625
    por Fernandes, Catarina, Taurino, Irene
    Publicado 2022
    “…In recent years molybdenum (Mo) and tungsten (W) have drawn increasing attention as promising candidates for the fabrication of both energy-powered active (e.g., transistors and integrated circuits) and passive (e.g., resistors and capacitors) biodegradable electronic components. …”
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  6. 4626
    “…These results reveal the possibility to employ such hybrid core@shell NWs for many applications, e.g. spin field effect transistors.…”
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  7. 4627
    “…Near-infrared (NIR) photoswitching transistors have been fabricated using a hybrid structure of zinc oxide (ZnO) and quantum-dots (QDs). …”
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  8. 4628
    “…Solid-state nanopores offer the potential to integrate nanopore sensing with other technologies such as field-effect transistors (FETs), optics, plasmonics, and microfluidics, thereby attracting attention to the development of commercial instruments for diagnostics and healthcare applications. …”
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  9. 4629
    “…Following is an elaboration on their optoelectronic applications based on the resulting single-nanostructure bandgap engineering, including monolithic white-light sources, proof-of-concept asymmetric light propagation and wavelength splitters, monolithic multi-color and white-light lasers, broadband-response photodetectors, high-performance transistors, and recently the most exciting single-nanowire spectrometer. …”
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  10. 4630
    “…It is widely known that the excellent intrinsic electronic and optoelectronic advantages of bismuthene and tellurene make them attractive for applications in transistors and logic and optoelectronic devices. However, their poor optoelectronic performances, such as photocurrent density and photoresponsivity, under ambient conditions severely hinder their practical application. …”
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  11. 4631
    por Pak, Sangyeon
    Publicado 2022
    “…Despite the high importance of doping of these 2D materials for designing field-effect transistors (FETs) and logic circuits, a simple and controllable doping methodology still needs to be developed in order to tailor their device properties. …”
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  12. 4632
    “…Understanding the ultra-fast transport properties of hot charge carriers is of significant importance both fundamentally and technically in applications like solar cells and transistors. However, direct measurement of charge transport at the relevant nanometre length scales is challenging with only a few experimental methods demonstrated to date. …”
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  13. 4633
    por Ali, Rashid, Siddiqui, Rafia
    Publicado 2022
    “…In recent past, thiophene-fused molecule namely, dithienothiophene (DTT) has attracted a tremendous attention of the researchers worldwide due to their potential applicability in organic electronics such as in solar cells, electrochromic devices (ECDs), organic field effect transistors (OFETs), organic limiting diodes (OLEDs), fluorescent probes, redox switching and so forth because of their (i) higher charge mobility, (ii) extended π-conjugation, and (iii) better tuning of band gaps, etc. …”
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  14. 4634
    “…This research is being conducted to learn more about various compounds and their potential uses in various fields such as renewable energy, electrical conductivity, the study of optoelectronic properties, the use of light-absorbing materials in photovoltaic device thin-film LEDs, and field effect transistors (FETs). AgZF3 (Z = Sb, Bi) compounds, which are simple, cubic, ternary fluoro-perovskites, are studied using the FP-LAPW and low orbital algorithm, both of which are based on DFT. …”
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  15. 4635
    “…Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high‐frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub‐100 nm air channels. …”
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  16. 4636
    “…The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. …”
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  17. 4637
    “…Using the hybrid electrodes, thin-film transistors (TFTs) were fabricated, which exhibited an electron mobility of ~6.7 cm(2) V(−1) s(−1), a current on-off ratio of ~1.04 × 10(7), and a subthreshold voltage of ~0.122 V/decade. …”
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  18. 4638
    “…Understanding the density of state (DOS) distribution in solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) is crucial for addressing electrical instability. …”
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  19. 4639
    “…With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. …”
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  20. 4640
    “…The polymorphic transition from 2H to 1[Formula: see text] -MoTe(2), which was thought to be induced by high-energy photon irradiation among many other means, has been intensely studied for its technological relevance in nanoscale transistors due to the remarkable improvement in electrical performance. …”
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