“…To date, 2D ferroelectrics are cultivated as channel materials in field‐effect transistors for their retentive and switchable dipoles and flexibility to be compacted into diverse structures and integration for intensive production. …”
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“…[Image: see text] Semiconducting π-conjugated polymers have attracted significant interest for applications in light-emitting diodes, field-effect transistors, photovoltaics, and nonlinear optoelectronic devices. …”
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“…The ETP method also exhibits an extremely high flexibility; various electrodes such as Au, Ti, and Al etc. can be transferred, and almost all types of organic devices, such as resistors, Schottky diodes, and field-effect transistors (FETs), can be constructed on planar or complex curvilinear substrates. …”
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“…[Image: see text] The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C(60)-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (V(th)) shift was found to depend critically on the OFET device structure: the direction of V(th) shift in top-gate OFETs was opposite to that in bottom-gate OFETs, while the use of the dual-gate OFET structure resulted in just very small variations in V(th). …”
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“…As MoS(2−δ) is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes nonuniform. …”
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“…Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. …”
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“…The sensor probe is a differential measurement system composed of two ion-sensitive field-effect transistors (ISFETs) and one Ag/AgCl electrode. With our new method, the border region of the sample solution and BLS is vibrated in order to mix solutions and suppress the overshoot after the sample solution is suctioned into the sensor probe. …”
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“…In this study, novel p-type scallop-shaped fin field-effect transistors (S-FinFETs) are fabricated using an all-last high-k/metal gate (HKMG) process on bulk-silicon (Si) substrates for the first time. …”
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“…The experiment has been performed using a specially designed FM(1)/FM(2)/graphene structure that to a large extent restores the realistic case of the proposed graphene-based transistors. We have quantitatively observed a reduced but still sizable magnetic moments of the epitaxial Fe ML on graphene, which is well resembled by simulations and can be attributed to the strong hybridization between the Fe 3d(z2) and the C 2p(z) orbitals and the sp-orbital-like behavior of the Fe 3d electrons due to the presence of graphene.…”
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“…Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as the added advantage of the memory function of the gate. …”
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“…This innovative method is key in working towards a fully integrated photonic-electronic platform, enabling the simultaneous growth of multiple compositions of device grade SiGe for electro-absorption optical modulators operating at a range of wavelengths, photodetectors, and bipolar transistors, on the same wafer. This is achieved by modifying the structural design of the SiGe strips, without the need to modify the growth conditions, and by using low cost, low thermal-budget methods.…”
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“…In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. …”
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“…The modification of the zigzag edges of silicene nanoribbons is a key issue to apply the silicene into the field effect transistors (FETs) and gives more necessity to better understand the experimental findings.…”
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“…These unique properties may lead to novel or improved technologies to address the pressing global challenges in many applications including transparent conducting electrodes, field effect transistors, flexible touch screen, single‐molecule gas detection, desalination, DNA sequencing, osmotic energy production, etc. …”
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“…The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. …”
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“…The drain currents in positive dependence on the layer numbers of the MoS(2) transistors with 1-, 3- and 5- layer MoS(2) have demonstrated small variation in material characteristics between each MoS(2) layer prepared by using this growth technique. …”
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“…Despite these challenges, cLPs have been used for a wide range of applications such as organic light emitting diodes (OLEDs) and organic field effect transistors (OFETs), paralleling developments in processing methods. …”
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“…Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). …”
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“…We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. …”
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“…As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. …”
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