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  1. 4661
    “…A high contact resistance restricts the application of carbon nanotubes (CNTs) in fabrication of field-effect transistors (FETs). Thus, it is important to decrease the contact resistance and investigate the critical influence factors such as the contact length and contact force. …”
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  2. 4662
    “…High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. …”
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  3. 4663
    por Bano, Amreen, Gaur, N. K.
    Publicado 2018
    “…A variety of theoretical and experimental works have reported several potential applications of MoS(2) monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS(2) monolayer deposited over insulating SrTiO(3) (001) to study the band alignment at TiO(2) termination. …”
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  4. 4664
    “…The one-port SAW delay line replaces the presently existing transceiver system, which is composed of thousands of transistors, thus enabling chipless and wireless operation. …”
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  5. 4665
    “…The very low power consumption of the proposed filter was achieved through introducing bias in subthreshold MOSFET transistors. The proposed filter is also capable of simultaneously receiving favorable low-, band-, and high-pass filter responses. …”
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  6. 4666
    “…As such, it is impossible to design highly demanded flexible single-crystalline electronics and wearable devices including displays, touch sensing devices, transistors, etc. Herein we report a method of induced peripheral crystallization to prepare large area flexible single-crystalline membrane (SCM) of phenylethylamine lead iodide (C(6)H(5)C(2)H(4)NH(3))(2)PbI(4) with area exceeding 2500 mm(2) and thinness as little as 0.6 μm. …”
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  7. 4667
    “…Pentacene attracts a great deal of attention as a basic material used in organic thin-film transistors for many years. Pentacene is known to form a highly ordered structure in a thin film, in which the molecular long axis aligns perpendicularly to the substrate surface, i.e., end-on orientation. …”
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  8. 4668
    “…The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. …”
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  9. 4669
    “…The fabricated thin film transistors with the same ZnO or AZO films confirm the improved electrical characteristics of the Al doped ZnO film.…”
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  10. 4670
    “…A thicker Al(2)O(3) block layer in the OPO process leads to a higher mobility in Ge transistors. By comparing two different oxidation methods, the results show that the OPO is an effective way to increase the interface layer quality which is contributing to the improved effective mobility of Ge pMOSFETs.…”
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  11. 4671
    “…Moreover, the curved PH 2 exhibits remarkable ambipolar charge transport in solution-processed organic thin-film transistors. Our research provides a new insight into the design and synthesis of stable functional curved aromatics with multiradical characters.…”
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  12. 4672
  13. 4673
    “…Meanwhile, reconfigurable interconversion between exciton and plasmon engender emerging applications like exciton transistors and multiplexers, exciton amplifiers, chiral valleytronics, and nonlinear excitonics. …”
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  14. 4674
    “…Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. …”
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  15. 4675
    “…Substantial effort has been devoted to both scientific and technological developments of wearable, flexible, semitransparent, and sensing electronics (e.g., organic/perovskite photovoltaics, organic thin‐film transistors, and medical sensors) in the past decade. …”
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  16. 4676
    “…Herein, poly(3-hexylthiophene-2,5-diyl) (P3HT) nanofiber-based organic field-effect transistors were successfully prepared by coaxial electrospinning technique with P3HT as the core polymer and poly(methyl methacrylate) (PMMA) as the shell polymer, followed by extraction of PMMA. …”
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  17. 4677
    “…Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. …”
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  18. 4678
    “…Various technologies have been developed that are analogous to semiconductor devices, such as diodes and field effect transistors. On the other hand, measurement techniques for local electric fields in such narrow channels have not yet been established. …”
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  19. 4679
    “…Density functional theory calculations predict that the single crystals of cluster polymers have a band gap of about 1.3 eV. Field-effect transistors fabricated with single crystals of cluster polymers feature highly anisotropic p-type semiconductor properties with ≈1800-fold conductivity in the direction of the polymer as compared to cross directions, hole mobility of ≈0.02 cm(2) V(−1) s(−1), and an ON/OFF ratio up to ≈4000. …”
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  20. 4680
    “…By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm(2) V(−1) s(−1) for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 10(8)) across a 1.5 cm × 1.5 cm region.…”
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