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  1. 4701
    “…In this review, the principle of technology, advances, and challenges in graphene-based biosensors such as field-effect transistors (FET), fluorescence sensors, SPR biosensors, and electrochemical biosensors to detect different cancer cells is systematically discussed. …”
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    Properties and Applications of Graphene and Its Derivatives in Biosensors for Cancer Detection: A Comprehensive Review
  2. 4702
    “…Intense light–matter interactions and unique structural and electrical properties make van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunneling transistors and flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics, and quantum light emitting devices (QLEDs), bright and narrow-line emitters using minimal amounts of active absorber material. …”
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    Picosecond energy transfer in a transition metal dichalcogenide–graphene heterostructure revealed by transient Raman spectroscopy
  3. 4703
    “…To address this problem, here we demonstrate a novel strategy to fabricate multi-wavelength circularly polarized light photodetector based on the donor-acceptor heterojunction, where efficient exciton separation enables chiral acceptor layer to provide differentiated concentration of holes to the channel of organic field-effect transistors. Benefitting from the low defect density at the semiconductor/dielectric interface, the photodetectors exhibit excellent stability, enabling current roll-off of about 3–4% over 500 cycles. …”
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    Organic donor-acceptor heterojunctions for high performance circularly polarized light detection
  4. 4704
    “…Film characteristics are correlated with results of field-effect transistors based on MoS(2) films deposited at 100 °C. …”
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    Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry
  5. 4705
    “…The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm(2) V(−1) s(−1), on/off current ratios exceeding 10(8), and high stability. …”
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    Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics
  6. 4706
    “…Component-level demonstrations span passive and active devices, including diodes and field-effect transistors. Patterning these devices into interconnected layouts yields functional systems, as illustrated in examples that range from wireless implants as monitors of neural and cardiac activity, to thermal probes of microvascular flow, and multi-electrode arrays for biopotential sensing. …”
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    High-speed, scanned laser structuring of multi-layered eco/bioresorbable materials for advanced electronic systems
  7. 4707
    “…More interestingly, when used in field‐effect transistors, synthesized bundles exhibit the n‐type behavior, which is dramatically different from bulk BP flakes which are p‐type. …”
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    Ultra‐Narrow Phosphorene Nanoribbons Produced by Facile Electrochemical Process
  8. 4708
    “…Our findings offer a very simple, cost-effective, and efficient solution for future semiconductor devices, including photovoltaics and thin-film transistors.…”
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    A High-Quality Dopant-Free Electron-Selective Passivating Contact Made from Ultra-Low Concentration Water Solution
  9. 4709
    “…These results lay a solid basis for the construction of advanced SiNW-derived field-effect transistors, sensors and display applications.…”
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    Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires
  10. 4710
    “…[Image: see text] In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. …”
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    Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics
  11. 4711
    “…Here, the influence of different dielectric materials on exciton and trion emission from electrostatically doped networks of polymer-sorted (6,5) SWCNTs in top-gate field-effect transistors is investigated. The observed differences of trion and exciton emission energies and intensities for hole and electron accumulation cannot be explained with the polarizability or screening characteristics of the different dielectric materials, but they show a clear dependence on the charge trapping properties of the dielectrics. …”
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    Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks
  12. 4712
    “…</mo><mn>35</mn><mspace width="1em" class="nbsp"/><mi mathvariant="normal">μ</mi><mi mathvariant="normal">m</mi></mrow></math> N-well CMOS technology using 5V MOS transistors, has a wide linear operating range of 2.6 pC w.r.t the input charge with a power dissipation of 2.3 mW. …”
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    A wide swing charge sensitive amplifier for a prototype Si–W EM calorimeter
  13. 4713
    “…These excellent performance features and the natural radiation hardness of the design, due to the thin gate oxide thickness of transistors, are very interesting for front-end electronics ICs of future hybrid-pixel detector systems.…”
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    A 10MS/s 8-bit charge-redistribution ADC for hybrid pixel applications in 65m CMOS
  14. 4714
    “…One of the bottlenecks to building semiconductor chips is the increasing cost required to develop chemical plasma processes that form the transistors and memory storage cells(1,2). These processes are still developed manually using highly trained engineers searching for a combination of tool parameters that produces an acceptable result on the silicon wafer(3). …”
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    Human–machine collaboration for improving semiconductor process development
  15. 4715
    “…Due to the excellent performance of stretchable organic semiconductors, they can be widely used as wearable soft-electron devices, such as stretchable organic field-effect transistors (OFETs), organic solar cells (OSCs), etc. …”
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    Hydrogen bonding-induced high-performance stretchable organic semiconductors: a Review
  16. 4716
    “…Emissive organic semiconductors are highly demanding for organic light‐emitting transistors (OLETs) and electrically pumped organic lasers (EPOLs). …”
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    High‐Performance Ambipolar and n‐Type Emissive Semiconductors Based on Perfluorophenyl‐Substituted Perylene and Anthracene
  17. 4717
    “…Macrocycles have attracted significant attention from academia due to their various applications in organic field-effect transistors, organic light-emitting diodes, organic photovoltaics, and dye-sensitized solar cells. …”
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    Structure–Property Relationship of Macrocycles in Organic Photoelectric Devices: A Comprehensive Review
  18. 4718
    “…In this study, a high-K material, aluminum oxide (AlO(x)), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. …”
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    Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
  19. 4719
    “…The study of thermoelectric behaviors in miniatured transistors is of fundamental importance for developing bottom-level thermal management. …”
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    Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices
  20. 4720
    “…Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). …”
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    A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications
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